MOSFET 50V 0.22A SOT-23-3
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
• 0.22 A, 50 V
♦ RDS(on) = 3.5 @ VGS = 10 V
♦ RDS(on) = 6.0 @ VGS = 4.5 V
• High Density Cell Design for Extremely Low RDS(on)
• Rugged and Reliable
• Compact Industry Standard SOT−23 Surface Mount Package
• This Device is Pb−Free and Halogen Free
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