• Trench gate and thin wafer technology
IGBT - 1250 V 25 A 223W
• Built in fast recovery diode in one package
• Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
#Transistor #IGBT
IGBT Transistors / Modules
IXXN200N60C3H1
SOT-227B_L1.5-W9.9-P0.60-BL
LCSC Part Number: C2980978
JLCPCB Part Class: Extended Part
Manufactured by Littelfuse/IXYS