Welcome to your new project. Imagine what you can build here.

nch

• Trench gate and thin wafer technology IGBT - 1250 V 25 A 223W • Built in fast recovery diode in one package • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C) #Transistor #IGBT