Connector Header Surface Mount, Right Angle 4 position 0.039" (1.00mm) The SM04B-SRSS-TB (LF)(SN) is a JST SH/SR series 4-position wire-to-board connector header designed for compact, high-density PCB applications. It features a 1.0 mm pitch, right-angle surface-mount (SMT) design, and a shrouded housing for secure mating and alignment. This connector is commonly used in space-constrained electronic devices where reliable signal transmission and low-profile mounting are required, such as in consumer electronics, industrial control boards, and embedded systems. It mates with compatible JST SH series housings, providing a secure push-fit connection for crimped wire assemblies. Key Features 4-position (1x4) wire-to-board connector header 1.0 mm fine pitch for compact PCB layouts Surface-mount (SMT), right-angle configuration Shrouded design for improved alignment and protection Rated current: 1 A per contact Rated voltage: 50 V AC/DC Low-profile height (~2.9 mm) Tin-plated contacts for reliable conductivity Operating temperature: -25°C to +85°C Compatible with JST SH/SR series mating housings Tape-and-reel packaging for automated PCB assembly #CommonPartsLibrary #Connector #JST #SM04BSRSSTB #SHSeries #SRSeries #WireToBoard #1mmPitch #SMTConnector #PCBConnector #ElectronicsComponents #ConnectorHeader

Flat, 5 mm 2 Form C, 2 A, relays Telecom Relay DPDT (2 Form C) Surface Mount The TQ2SA-L2-3V-Z is a compact surface-mount DPDT (2 Form C) telecom/signal relay from Panasonic Industry designed for low-power switching applications. It features a dual-coil latching mechanism, allowing the relay to maintain its state without continuous coil power, making it suitable for battery-powered and energy-efficient systems. This relay is commonly used in telecommunications equipment, industrial controls, measurement devices, and embedded electronic systems. Key Features DPDT (2 Form C) contact configuration 3V DC dual-coil latching relay Low power consumption: approximately 140 mW Compact SMD package: only 5.6 mm height Surface-mount gull-wing terminals Sealed construction for automatic washing compatibility High switching capability: up to 2 A Wide switching voltage range: up to 125 VAC / 220 VDC Fast operate/release time: approx. 4 ms High dielectric strength and surge resistance Wide operating temperature: −40°C to +85°C Gold-clad AgNi contacts for reliable low-level signal switching Tape-and-reel packaging (“Z” suffix) for automated assembly #CommonPartsLibrary #relay

Board to Board & Mezzanine Connectors .050\" SEARAY High-Speed High-Density Open-Pin-Field Array Terminal 400 Position Connector High Density Array, Male Surface Mount, Right Angle Gold SEAM-40-01-L-10-2-RA-K-TR is a high-speed, high-density board-to-board mezzanine connector from the Samtec SEARAY™ series. It features a right-angle, surface-mount design with 400 positions arranged in a 10-row open-pin-field array on a 1.27 mm (0.050") pitch. The connector utilizes Samtec's Edge Rate® contact system, providing excellent signal integrity, durability, and support for high-speed differential pair routing in demanding communication, networking, and embedded computing applications. Key Features High-density 400-position open-pin-field array connector 1.27 mm (0.050") contact pitch for compact board-to-board interconnects Right-angle, surface-mount termination Rugged Edge Rate® contact system for reliable high-speed performance Supports high-speed serial protocols and differential pair routing Suitable for power, ground, and signal connections within the same connector Gold-plated contacts for enhanced reliability and corrosion resistance Board-guide feature for improved mating alignment Current rating up to 1.9 A per contact Voltage rating up to 240 VAC / 339 VDC Tape-and-reel packaging for automated assembly processes RoHS compliant and designed for high-reliability applications #Samtec #SEARAY #SEAM4001L102RAKTR #BoardToBoardConnector #MezzanineConnector #HighSpeedConnector #HighDensityInterconnect #EdgeRate #SurfaceMount #RightAngleConnector #EmbeddedSystems #TelecomEquipment #NetworkingHardware #IndustrialElectronics #PCBDesign

The SI2300 is a N-channel enhancement-mode MOSFET designed for efficient switching and power management applications. Fabricated using advanced trench MOS technology, it delivers low on-state resistance, fast switching performance, and high current handling capability within a compact surface-mount package. The device is widely used in load switching, battery-powered equipment, DC-DC converters, motor control circuits, power distribution systems, and general-purpose switching applications where efficiency and space optimization are critical. Features N-channel enhancement-mode MOSFET Low on-state resistance for reduced conduction losses Fast switching characteristics Low gate charge for efficient drive operation Compact surface-mount package High current carrying capability Low power dissipation design Optimized for battery-operated systems Suitable for high-speed switching applications RoHS-compliant and lead-free construction Applications Power management circuits Load switching systems Battery protection modules Portable electronic devices DC-DC converter circuits Motor drive applications Power distribution networks Embedded control systems Consumer electronics Industrial automation equipment Electrical Characteristics Low drain-to-source on-resistance High drain current capability Low gate threshold voltage Fast turn-on and turn-off response Low gate capacitance High switching efficiency Low leakage current characteristics Enhanced thermal performance Stable operation across specified temperature ranges Reliable avalanche and transient performance Mechanical Characteristics Surface-mount package construction Compact footprint for high-density PCB layouts Suitable for automated assembly processes Compatible with standard reflow soldering methods Tape-and-reel packaging availability Robust package integrity for production environments Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant package design Suitable for operation in demanding electronic environments Compliant with RoHS and environmental regulations Long operational lifetime under recommended operating conditions #commonpartslibrary #mosfet #nchannelmosfet #powermanagement #powerswitching #semiconductor #transistor #loadswitch #dcdcconverter #batteryprotection #embeddedsystems #industrialelectronics #consumerelectronics #smtcomponent #electronicsdesign

Electronic Fuse Regulator 4A 8-WSON (2x2) The TPS259530DSGR is a compact, integrated eFuse protection device designed to provide robust power-path management for low-voltage DC systems, particularly nominal five-volt rails. It combines multiple protection and control features into a single solution, enabling safe distribution of power to downstream circuitry while minimizing the need for external components. The device supports controlled inrush current during startup, continuous current monitoring, and rapid fault response to protect both the power source and the load. Integrated protection mechanisms include overvoltage protection, undervoltage lockout, overcurrent limiting, thermal shutdown, and reverse current blocking. This makes the device well suited for applications requiring high reliability, such as embedded systems, industrial electronics, consumer devices, and communication equipment. Functional Description The device operates as a high-side protection switch using an internal MOSFET to control current flow from the input supply to the load. It monitors input voltage, output current, and internal temperature to ensure operation within safe limits. When a fault condition such as overcurrent or overvoltage is detected, the device limits or interrupts current flow to prevent damage. The integrated control loop provides smooth startup by limiting inrush current and preventing supply droop. Reverse current blocking prevents unwanted current flow from the output back to the input when the input supply is removed or drops below the output level. Electrical Characteristics The device supports operation across a wide input voltage range suitable for low-voltage DC systems, including typical five-volt rails. It features an adjustable overvoltage protection threshold aligned with five-volt system requirements, along with configurable undervoltage lockout to ensure proper system startup and shutdown behavior. The current limit is externally programmable, allowing flexibility for different load conditions. The device exhibits low on-resistance to minimize power dissipation and voltage drop during normal operation. Protection Features The TPS259530DSGR integrates multiple protection functions to enhance system robustness. Overvoltage protection prevents excessive input voltage from reaching the load. Undervoltage lockout ensures the device only operates when the input supply is within a valid range. Overcurrent protection actively limits current during fault conditions and can respond rapidly to short circuits. Thermal shutdown protects the device from overheating by disabling operation when internal temperature exceeds safe limits. Reverse current blocking prevents backflow of current, safeguarding both the source and load. Control and Interface The device includes an enable control input that allows external control of the power path. It supports configurable behavior for fault response and recovery, depending on system design. External components can be used to set thresholds such as current limit and undervoltage lockout, providing design flexibility. Status signaling allows system-level monitoring of fault conditions. Mechanical and Package Information The TPS259530DSGR is provided in a compact surface-mount package suitable for space-constrained applications. The package is optimized for thermal performance and efficient PCB layout, enabling reliable operation under varying load conditions. It is supplied in tape-and-reel format for automated assembly processes. Applications This device is intended for use in systems requiring reliable power distribution and protection. Typical applications include five-volt power rails in embedded systems, industrial control modules, consumer electronics, communication devices, and peripheral power management circuits. Summary The TPS259530DSGR offers an integrated, high-reliability solution for power path protection and management in low-voltage systems. Its combination of protection features, configurability, and compact form factor makes it a widely used choice for safeguarding five-volt supply rails in modern electronic designs. #commonpartslibrary #integratedcircuit #powermanagement

The NX3225SA-26MHz-STD-CSR-6 is a surface-mount quartz crystal resonator designed to provide a stable frequency reference for microcontrollers, wireless communication modules, embedded systems, consumer electronics, industrial controls, and timing applications. Manufactured in a compact ceramic package, this crystal offers excellent frequency stability, low power consumption, and reliable long-term performance. Its standard frequency tolerance and stability characteristics make it suitable for clock generation, frequency synthesis, and synchronization functions in a wide range of electronic designs requiring precise timing accuracy. Features Surface-mount quartz crystal resonator Fundamental mode operation Compact ceramic package suitable for high-density PCB layouts Stable frequency reference for digital and RF applications Low equivalent series resistance for reliable oscillator startup Compatible with automated assembly processes Excellent aging characteristics and long-term reliability Suitable for low-power and battery-operated devices RoHS-compliant and lead-free construction Applications Microcontroller clock generation Wireless communication modules Bluetooth and Wi-Fi devices Industrial automation equipment IoT and smart devices Consumer electronics Measurement and instrumentation systems Embedded control platforms Timing and synchronization circuits Electrical Characteristics Nominal frequency centered at twenty-six megahertz Standard frequency tolerance classification Standard operating temperature stability Fundamental crystal oscillation mode Specified load capacitance configuration Low equivalent series resistance High insulation resistance Low drive level operation Reliable startup characteristics Long operational lifetime with minimal frequency drift Mechanical Characteristics Ceramic surface-mount package Compact footprint suitable for space-constrained designs Metal lid sealed construction Designed for reflow soldering processes Tape-and-reel packaging compatibility Environmental Characteristics Industrial-grade reliability Resistance to mechanical shock and vibration within specification limits Moisture-resistant sealed package construction Suitable for standard electronic manufacturing environments Compliant with environmental and hazardous substance regulations #commonpartslibrary #crystal #quartzcrystal #frequencyreference #timingdevice #oscillator #clocksource #smtcomponent #passivecomponent #embeddedsystems #wirelesscommunication #industrialelectronics #consumerelectronics #iotdevices #electronicsdesign

Electronic Fuse Regulator 5.3A 20-WQFN (3x4) The TPS25940 is a compact, feature-rich eFuse (electronic fuse) power switch from Texas Instruments designed to provide advanced power-path protection and management for SSDs, storage systems, servers, telecom equipment, and other DC-powered applications. It integrates back-to-back MOSFETs for true reverse-current blocking, programmable current limiting, overvoltage/undervoltage protection, and controlled output slew-rate management in a small 20-pin WQFN package. Key Features Wide operating voltage range: 2.7 V to 18 V (20 V maximum input) Low 42 mΩ typical on-resistance (RDS(on)) Adjustable current limit from 0.6 A to 5.3 A True reverse-current blocking using integrated back-to-back FETs Fast reverse-voltage shutdown response of 1 µs Programmable output ramp-up (dV/dt control) for inrush-current management Programmable overvoltage (OVP) and undervoltage (UVP) protection thresholds Integrated IMON analog current-monitor output PGOOD and FLT status outputs for system monitoring Low-power DevSleep™ mode for SATA SSD applications Typical operating quiescent current of 200 µA Typical disabled current of 15 µA Operating junction temperature range from −40°C to +125°C UL 2367 recognized and designed for fault-safe operation under single-point failure conditions. Typical Applications PCIe, SATA, and SAS SSD/HDD storage devices Enterprise servers and storage systems RAID controller cards with holdup-power management Telecom switches and routers Set-top boxes, DTVs, and gaming consoles Adapter-powered equipment General-purpose smart load-switch and power-protection circuits. Package Information Package: 20-pin WQFN (RVC) Temperature range: −40°C to +85°C ambient operation Tape-and-reel packaging for automated assembly. #CommonPartsLibrary #IntegratedCircuit # TPS25940

High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign

555 Type, Timer/Oscillator (Single) IC 2.1MHz 8-SOIC The TLC555IDR is a low-power CMOS timer device designed as a functional replacement for the standard bipolar 555 timer while providing significantly reduced supply current and improved operating efficiency. The device supports both astable and monostable operating modes and is commonly used for timing generation, pulse shaping, oscillation, PWM generation, delay circuits, and frequency generation applications. The CMOS architecture enables low power consumption, rail-to-rail output capability, and stable timing performance over a wide operating voltage range. The device is suitable for battery-powered systems, portable electronics, industrial controls, instrumentation, consumer products, and embedded electronic designs. The TLC555IDR is supplied in a compact SOIC surface-mount package intended for automated PCB assembly and space-constrained applications. Electrical Characteristics CMOS low-power timer architecture Functional equivalent to standard 555 timer devices Wide operating supply voltage range Low quiescent supply current High input impedance Rail-to-rail output swing capability Stable threshold and trigger levels Compatible with TTL and CMOS logic levels Capable of astable and monostable operation Adjustable duty cycle and frequency operation High output drive capability for direct interfacing Low noise and improved switching performance compared to bipolar 555 timers Functional Features Precision timing generation Oscillator and clock generation Pulse-width modulation support One-shot pulse generation Delay timer implementation Missing pulse detection Frequency divider implementation Sequential timing control LED flashing and tone generation PWM motor and power control applications Package Information Surface-mount SOIC package Standard tape-and-reel packaging format Compact footprint for automated assembly RoHS compliant device construction Environmental and Operating Conditions Industrial operating temperature range ESD protection handling required Suitable for commercial and industrial embedded systems Designed for low-power electronic applications Typical Applications Timer circuits Pulse generators Oscillators PWM controllers LED flashers Alarm and tone generators Frequency generators Power management timing Embedded control systems Portable battery-powered electronics #commonpartslibrary #integratedcircuit #timer #oscillator

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor