Part Metadata Review and Verification
Table
| Field | Value |
|---|---|
| MPN | BQ25773REER |
| Manufacturer | Texas Instruments |
| Description | Battery Management IC, 2-cell to 5-cell NVDC dual-phase buck-boost battery charge controller with system power monitor |
| Datasheet | |
| Project package property | TO |
| Datasheet package | REE (WQFN, 36) |
| Datasheet body size | 4.00 mm x 5.00 mm |
| Datasheet max height | 0.8 mm |
| Symbol terminal count in project | 37 |
| Footprint pad count in project | 37 |
| 3D model | Present |
Table
| Category | Summary |
|---|---|
| Device type | Synchronous NVDC buck-boost battery charge controller |
| Battery support | 2-cell to 5-cell |
| Input source support | USB adapter, USB-C PD SPR, USB-C PD EPR, traditional adapters |
| Input operating range | 3.5 V to 40 V |
| Charge current | Up to 16.3 A / 30 A based on 5 mOhm / 2 mOhm sense resistor |
| Input current limit | Up to 8.2 A / 16.4 A based on 10 mOhm / 5 mOhm sense resistor |
| OTG | 3 V to 5 V, up to 3 A based on 10 mOhm sense resistor |
| Switching frequency | 600 kHz / 800 kHz programmable |
| Interface | I2C |
| ADC | Integrated 16-bit ADC |
| Accuracy | ±0.5% charge voltage regulation, ±2% charge current regulation, ±2% input current regulation, ±2% input/charge current monitor |
Table
| Feature | Notes |
|---|---|
| NVDC architecture | System stays regulated and can keep operating even if battery is discharged or removed |
| Quasi dual phase buck-boost | Seamless transition between buck, buck-boost, and boost |
| Pass Through Mode | Claimed >99% efficiency |
| DRSS | Dual random spread spectrum for EMI performance |
| ICO | Input Current Optimizer |
| FRS | Integrated Fast Role Swap for USB-PD |
| Intel platform support | IMVP8 / IMVP9 features including VAP and PROCHOT behavior |
| PSYS | System power monitor output |
| Protection | Thermal regulation, thermal shutdown, input/system/battery OVP, MOSFET and inductor OCP |
Table
| Parameter | Range |
|---|---|
| ACN_A, ACP_A, ACN_B, ACP_B, VBUS, VSYS | -0.3 V to 45 V |
| SW1_A, SW1_B, SW2 | -2 V to 45 V |
| SRN, SRP | -0.3 V to 30 V |
| BATDRV | -0.3 V to 35 V |
| BTST1_A, BTST1_B, HIDRV1_A, HIDRV1_B | -0.3 V to 50 V |
| BTST2, HIDRV2 | -0.3 V to 50 V |
| LODRV1_A, LODRV1_B, LODRV2 (25 ns) | -4 V to 5.5 V |
| HIDRV1_A, HIDRV1_B (25 ns) | -4 V to 50 V |
| HIDRV2 (25 ns) | -4 V to 50 V |
| SW1_A, SW1_B (25 ns) | -4 V to 45 V |
| SW2 (25 ns) | -4 V to 45 V |
| SDA, SCL, REGN_A, REGN_B, CHRG_OK, CELL_BATPRES, ILIM_HIZ, LODRV1_A, LODRV1_B, LODRV2, CMPIN_TR, CMPOUT, MODE, EN_OTG | -0.3 V to 5.5 V |
| /PROCHOT | -0.3 V to 5.5 V |
| IADPT, IBAT, PSYS | -0.3 V to 3.6 V |
| BTST1_A-SW1_A, BTST1_B-SW1_B, BTST2-SW2, HIDRV1_A-SW1_A, HIDRV1_B-SW1_B, HIDRV2-SW2, BATDRV-SRP | -0.3 V to 5.5 V |
| SRP-SRN, ACP_A-ACN_A, ACP_B-ACN_B | -0.3 V to 0.3 V |
| Junction temperature | -40 C to 150 C |
| Storage temperature | -55 C to 150 C |
Table
| Parameter | Range |
|---|---|
| ACP_A, ACN_A, ACP_B, ACN_B, VBUS | 0 V to 40 V |
| VSYS | 0 V to 23 V |
| SRP, SRN | 0 V to 23 V |
| SW1_A, SW1_B | -2 V to 40 V |
| SW2 | -2 V to 23 V |
| BTST1_A, BTST1_B, HIDRV1_A, HIDRV1_B | 0 V to 45 V |
| BTST2, HIDRV2, BATDRV | 0 V to 28 V |
| SDA, SCL, REGN_A, REGN_B, CHRG_OK, CELL_BATPRES, ILIM_HIZ, LODRV1_A, LODRV1_B, LODRV2, CMPIN_TR, CMPOUT, MODE, EN_OTG | 0 V to 5.3 V |
| /PROCHOT | 0 V to 5 V |
| IADPT, IBAT, PSYS | 0 V to 3.3 V |
| Differential: BTSTx-SWx, HIDRVx-SWx, BATDRV-SRP | 0 V to 5 V |
| Differential: SRP-SRN, ACP_A-ACN_A, ACP_B-ACN_B | -0.2 V to 0.2 V |
| Junction temperature | -40 C to 125 C |
Table
| Parameter | Value |
|---|---|
| Input voltage operating range | 3.5 V to 40.00 V |
| System voltage regulation range | 5.16 V to 23.16 V |
| Charge current regulation accuracy | -1.5% to 1.5% |
| REGN overvoltage falling threshold | 5.10 V / 5.30 V / 5.50 V min/typ/max |
| HIZ battery-powered current | 1000 uA / 1150 uA typ/max |
| PSYS gain accuracy | -3.5% to 2% |
| PSYS clamp voltage | 3.1 V / 3.3 V |
| System OVP rising threshold, 2s | 11.85 V / 12.15 V / 12.35 V |
| System OVP rising threshold, 3s | 16.8 V / 17.15 V / 17.4 V |
| System OVP rising threshold, 4s | 21.90 V / 22.3 V / 22.60 V |
| Comparator threshold | 1.18 V / 1.2 V / 1.23 V |
| EN_OTG low input | 0.8 V |
| EN_OTG high input | 1.35 V |
| I2C low input threshold | 0.42 V |
Table
| Field | Value |
|---|---|
| Orderable part | BQ25773REER |
| Status | Active Production |
| Package | WQFN (REE) |
| Pin count | 36 pins |
| Body size | 4.00 mm x 5.00 mm |
| Height | 0.8 mm max |
| Lead finish | NIPDAU |
| MSL | Level-1-260C-UNLIM |
| Operating temperature | -40 C to 125 C |
| Part marking | BQ25773 |
Table
| Dimension | Value |
|---|---|
| Body A | 3.9 mm to 4.1 mm |
| Body B | 4.9 mm to 5.1 mm |
| Max height | 0.8 mm |
| Lead width | 0.15 mm to 0.25 mm |
| Lead length | 0.3 mm to 0.5 mm |
| Pin pitch | 0.4 mm |
| Thermal pad | 2.6 mm to 2.8 mm |
| Datasheet land-pattern exposed pad | 3.6 mm x 2.8 mm |
Table
| Pin | Project terminal | Datasheet description |
|---|---|---|
| 1 | LODRV1_A | Buck phase A low-side MOSFET driver output |
| 2 | REGN_A | 5 V LDO output for gate drive; requires 2.2 uF or 3.3 uF ceramic capacitor to power ground |
| 3 | BTST1_A | Bootstrap supply for phase A high-side driver; connect 0.1 uF between SW1_A and BTST1_A |
| 4 | HIDRV1_A | Buck phase A high-side MOSFET driver |
| 5 | SW1_A | Buck phase A switching node |
| 6 | VBUS | Charger input voltage; recommends 1 ohm + 0.47 uF min input low-pass filter |
| 7 | ACN_B | Phase B input current-sense negative input; RC filter required |
| 8 | ACP_B | Phase B input current-sense positive input; RC filter required |
| 9 | ACN_A | Phase A input current-sense negative input; RC filter required |
| 10 | ACP_A | Phase A input current-sense positive input; RC filter required |
| 11 | CHRG_OK | Open-drain status output; use 10 kOhm pullup |
| 12 | EN_OTG | Active-high OTG / VAP / FRS enable input |
| 13 | ILIM_HIZ | Input current-limit programming pin via resistor divider |
| 14 | IADPT | Adapter current monitor output |
| 15 | IBAT | Battery current monitor output |
| 16 | MODE | Operation mode pin; pull-down resistor required |
| 17 | PSYS | System power monitor output; resistor to ground generates voltage; clamp near 3.2 V |
| 18 | ~PROCHOT | Active-low open-drain processor hot output |
| 19 | SDA | I2C data, open-drain; use 10 kOhm pullup |
| 20 | SCL | I2C clock input; use 10 kOhm pullup |
| 21 | CMPOUT | Open-drain comparator output |
| 22 | CMPIN_TR | Comparator input / temperature regulation input; tie to ground if unused |
| 23 | CELL_BATPRES | Cell-count and battery-present pin via resistor divider; no external capacitor allowed |
| 24 | SRN | Battery current-sense negative input and battery voltage sense; use 0.1 uF filter cap across sense resistor and 10 ohm contact resistor |
| 25 | SRP | Battery current-sense positive input; use 0.1 uF filter cap across sense resistor |
| 26 | BATDRV | BATFET gate driver output |
| 27 | VSYS | Charger system voltage sense |
| 28 | SW2 | Boost switching node |
| 29 | HIDRV2 | Boost high-side MOSFET driver |
| 30 | BTST2 | Bootstrap supply for boost high-side driver; connect 0.1 uF between SW2 and BTST2 |
| 31 | LODRV2 | Boost low-side MOSFET driver |
| 32 | REGN_B | 5 V LDO output; internally connected to REGN_A; requires 2.2 uF or 3.3 uF capacitor |
| 33 | LODRV1_B | Buck phase B low-side MOSFET driver |
| 34 | BTST1_B | Bootstrap supply for phase B high-side driver; connect 0.1 uF between SW1_B and BTST1_B |
| 35 | HIDRV1_B | Buck phase B high-side MOSFET driver |
| 36 | SW1_B | Buck phase B switching node |
| Exposed pad | PGND | Common power ground thermal pad; must be soldered and tied into PGND with multiple vias |
Table
| Check | Result |
|---|---|
| Pin naming | Looks consistent between symbol and footprint |
| Pin numbering | Looks consistent for the pins sampled against the datasheet |
| Total connection count | Looks consistent: 36 pins + exposed pad |
| Exposed pad function | Looks consistent: center pad is mapped to PGND |
| Package family / size | Looks broadly consistent with a 4 mm x 5 mm WQFN with exposed pad |
Table
| Severity | Issue | Why it matters |
|---|---|---|
| High | The project property Package or Case Code = TO does not match the datasheet package REE (WQFN, 36) | This can cause incorrect ordering metadata, bad library search matches, or confusion during manufacturing handoff |
| Medium | The footprint uses a center pad around 2.8 mm x 3.8 mm, while the datasheet extracts indicate thermal-pad related dimensions of 2.6 mm to 2.8 mm for package pad and 3.6 mm x 2.8 mm for land pattern | This should be manually verified because exposed-pad geometry directly affects soldering, thermal performance, and assembly yield |
| Medium | The footprint asset naming implies a generic 37-pad QFN pattern rather than explicitly the TI REE0036A package code | It may still be correct, but it increases the chance of an almost-right footprint being used for the wrong package revision |
| Medium | The datasheet explicitly requires the exposed pad to be soldered and tied into PGND with multiple vias | If the final footprint or recommended layout omits via-ready thermal strategy, the device may suffer thermal and mechanical reliability issues |