High Speed

USB4115-03-C: 8.3 mm x 3.8 mm; Expansion headers: 12.7 mm x 2.54 mm; Analog conditioning op-amps: 3.12 mm x 1.6 mm; Analog/digital glitch blocks: 3.9 mm x 4.9 mm

Core components: - U7: ESP32-S3-WROOM-1-N16R8 (Espressif, main MCU, 16 MB flash) - U1: TLV62568DDC (TI, 3.3V buck regulator) - U2: TLV70012_SOT23-5 (TI, 1.2V analog reference LDO) - U3: CP2102N-A02-GQFN28 (Silicon Labs, USB-UART bridge) - U4: OPA1688IDRGR (TI, analog conditioning op-amp) - U5: 74HC4053D,652 (Nexperia, analog glitch multiplexer) - U6: 74HC4066PW-Q100,11 (Nexperia, digital glitch switch) - D1: BAV99-7-F (Diodes Inc., CVBS clamp diode) - J1: USB4115-03-C (GCT, USB-C connector) - J2: CONBNC001 (TE Connectivity Linx, CVBS I/O BNC jack) - J3: 2x5 Pin Shrouded Header (Würth Elektronik, expansion header) - SW1-SW4: SW_Push (Schurter, pushbutton UI) Passives: - R1, R2: 500Ω (USB-C CC pulldown) - R3-R5: 500Ω (pull-up, termination) - R6-R9: 500Ω (UI pull-ups) - C1-C5: SMD_0603_1608Metric, for input/output/decoupling caps - Additional: generic capacitors for decoupling on all IC rails as required. All passives default SMD 0603 size unless otherwise specified.

graph TB MCU[MCU Core] ADC[ADC/DAC Conditioning] CVBS[CVBS I/O] Glitch[Analog/Digital Glitch Blocks] USB[USB-C Power Management & USB-UART Bridge] UI[UI Controls] EXP[Expansion Headers] MCU --> ADC MCU --> CVBS CVBS --> Glitch MCU --> USB MCU --> UI MCU --> EXP

Standard 4 Layer (Top, Inner1: Signal/DGND, Inner2: Power/AGND, Bottom), split AGND/DGND with controlled single-point bridge

32.7 mm

CVBS I/O; Analog Distortion Block; Digital ADC/DAC Path; UI/Control Interfaces; Expansion Headers

Up to 0.5A: min 0.5mm (20 mil). 0.5-1A: min 1.0mm (40 mil). 1-2A: min 1.5mm (60 mil). Above 2A: scale proportionally or use parallel/copper pours. Inner power pours: maintain clearance, use thermal reliefs. Follow IPC-2152 and round-up to next 0.25mm for safety.

24.9 mm

Trace Width Guidelines for 3.3V Power Nets: • For currents up to 500 mA: minimum 0.5 mm (20 mil) trace width (1 oz copper, 10°C rise). • For currents up to 1 A: minimum 1.0 mm (40 mil) trace width. • For currents up to 2 A: minimum 1.5 mm (60 mil) trace width. • For currents above 2 A: scale width proportionally or use parallel traces/copper pours. • Inner plane power pours: maintain clearance and use thermal reliefs at vias. • Follow IPC-2152 and round up widths to the nearest 0.25 mm for safety and manufacturability.

For up to 0.5A: min 0.5mm (20mil); 0.5-1A: min 1.0mm (40mil); 1-2A: min 1.5mm (60mil); >2A: scale width or use parallel traces/pours. Inner power pours: maintain clearance, use thermal reliefs at vias. Follow IPC-2152, round up widths to nearest 0.25mm for safety and manufacturability.

75Ω single-ended microstrip (outer layer, referenced to continuous ground). Trace width ~2.8mm (1.6mm FR4, 1oz Cu, verify for stackup). Maintain ground pour clearance ≥3× trace width, stitch to ground with vias. Place AC-coupling capacitor (≤100 nF) and 75Ω termination within 5mm of BNC jack. Avoid 90° bends: use 45°/curved traces. Minimize layer transitions. Use controlled-impedance vias/backdrilling if necessary. Keep away from noisy digital traces.

Place 0.1 μF ceramic decoupling capacitors as close as possible to each IC power pin (VCC to GND). Minimize loop area with wide, short traces (<1 mm). For extra high-frequency filtering, use 0201/0402 capacitors in parallel. Insert a bulk capacitor (1-10 μF) within 5 mm of power entry/regulator output. Use via pairs for cap-to-plane connections (one via per pad), ground via adjacent to cap ground pad. Avoid placing decoupling capacitors over slots/cutouts in ground/power plane. Do not route signals between IC power pin and its decoupling cap.

24.9 mm

Power

32.7 mm

Ground