P-channel enhancement-mode MOSFET designed for power switching applications, featuring a −30 V drain-source voltage, −70 A continuous drain current (at VGS = −20 V, TC = 25°C), and a maximum RDS(on) of 6.2 mΩ at VGS = −20 V (8 mΩ max at −10 V). The device uses advanced trench technology and is specified with ±25 V gate-source voltage, 100% UIS testing, and 100% gate resistance (Rg) testing.
#Commonpartslibrary
#Transistor
#P-Channel
#MOSFET #PowerMOSFET #30V #HighCurrent #LowRDSon