Brave V2 is a versatile and efficient power board that can provide 12v, 5v and 3.3v outputs for various applications. It can be powered by battery or solar panel (now revised to accepts input voltage of upto 30V), and the battery can be recharged by solar energy. It can also be powered by a USB port if needed. This board is ideal for IoT projects that require reliable and stable power supply in different environments. #IoT #power #management #usb

The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor, presented in a compact PDFN 2x2S package. This semiconductor component operates with a maximum Drain-Source Voltage (VDS) of 30V and boasts a low On-Resistance (RDS(ON)) of 12mΩ, which enables efficient current handling of up to 9A at 25°C. The device is designed for high-performance applications, featuring a Gate-Source Voltage (VGS) range up to ±20V and capable of pulsed drain currents reaching 27A. Additionally, the PB600BA is Halogen-Free and Lead-Free, making it compliant with RoHS standards. It also supports an Avalanche Current (IAS) of 12.6A and an Avalanche Energy (EAS) of 7.9mJ. With thermal resistance parameters optimized for reliable operation, this transistor is ideal for power management and switching applications in various electronic designs.

convert voltage from 1.5V to 30V

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Tutorial project to learn Flux Input voltage is 3V3. Max 3V3 output current is 2A. Output voltage is 3V3. Output voltage should be delayd 100ms after the input voltage reaches 3.0V.

30V 12A 940mW 9.5mΩ@10V,11.5A P Channel PowerDI3333-8 MOSFETs

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143 #CommonPartsLibrary #TransistorBJT #BCV62

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143 #CommonPartsLibrary #TransistorBJT #BCV62

The J175, J176, MMBFJ175, MMBFJ176, and MMBFJ177 are a series of P-Channel switches designed and manufactured by onsemi™, suitable for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. These components are sourced from process 88, indicating a specific manufacturing technique employed by onsemi™ to ensure consistent performance and reliability. The devices are offered in both TO-92 and SOT-23 packages, catering to a variety of mounting preferences and application requirements. They are characterized by their ability to handle a drain-gate voltage of -30V, a gate-source voltage of 30V, and a forward gate current of 50 mA. Operating and storage junction temperature ranges are specified from -55 to +150°C, ensuring robustness across a wide range of environmental conditions. With features like low on-resistance and high transconductance, these components are optimized for efficient signal modulation and minimal power loss, making them highly suitable for precision applications in analog signal processing.

The DMN3016LFDF is an N-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated, designed for high-efficiency power management applications. This MOSFET features a low on-state resistance (RDS(ON)) of 12mΩ at VGS = 10V and 16mΩ at VGS = 4.5V, with a maximum drain current (ID) of 10A at TA = +25°C. The device operates with a drain-source voltage (BVDSS) of 30V and a gate-source voltage (VGSS) of +20V. It is ideally suited for battery management, power management functions, and DC-DC converters due to its superior switching performance and low gate threshold voltage. The component is housed in a U-DFN2020-6 (Type F) package with a 0.6mm profile, making it suitable for low-profile applications. It is also fully RoHS compliant, halogen and antimony-free, and qualified to JEDEC standards for high reliability.

The NTTFS4C05N is an advanced N-Channel MOSFET designed by ON Semiconductor, optimized for high-efficiency power management applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge for minimal switching losses. It operates at a maximum drain-to-source voltage (VDSS) of 30V and can handle continuous drain currents up to 75A. The device is available in a compact WDFN8 package and is suitable for use in DC-DC converters, power load switches, and notebook battery management systems. The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets global environmental standards. Additionally, the NTTFS4C05N offers robust performance with a maximum power dissipation of 33W at a case temperature of 25°C, and it can withstand pulsed drain currents up to 174A. It also features a gate threshold voltage range of 1.3V to 2.2V and boasts fast switching characteristics with turn-on and turn-off delay times as low as 2ns and 8ns, respectively.

The NIKO-SEM PB600BA is an N-Channel Enhancement Mode Field Effect Transistor (FET) housed in a PDFN 2x2S package, designed for applications requiring high efficiency and low on-resistance. This halogen-free and lead-free component boasts a Drain-Source Voltage (V_DS) of 30V and a Gate-Source Voltage (V_GS) of ±20V. With a maximum continuous drain current of 9A at 25°C and a pulsed drain current capability of up to 27A, it is well-suited for high-current applications. The device features a low R_DS(on) of 12mΩ at V_GS = 10V, ensuring minimal power loss and heat generation. The PB600BA also exhibits excellent thermal performance with a junction-to-ambient thermal resistance (R_θJA) of 71.7°C/W. Additional characteristics include a gate threshold voltage (V_GS(th)) range of 1.3V to 2.5V, a total gate charge (Q_g) of 15nC at V_GS = 10V, and a maximum power dissipation of 1.7W at 25°C. This FET is ideal for use in power management, load switching, and other high-efficiency electronic circuits.

The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

30V 1W 30@20mA,2V 3A SOT-89 Bipolar Transistors - BJT ROHS #CommonPartsLibrary #TransistorBJT #NPN