Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
2SC5171
Power Bipolar Transistor, 2A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin The 2SC5171 is a high-voltage, high-speed NPN bipolar junction transistor designed for switching and amplification applications. It is commonly used in power regulation circuits, switching power supplies, and high-voltage driver stages due to its fast switching characteristics and high collector-emitter voltage capability. The device is typically housed in a TO-220 package, providing good thermal performance for medium to high power applications. Key Features High collector-emitter voltage capability Fast switching performance High current handling capability Low saturation voltage Suitable for high-frequency operation Absolute Maximum Ratings Collector-Emitter Voltage (V<sub>CEO</sub>): 1500 V Collector-Base Voltage (V<sub>CBO</sub>): 1500 V Emitter-Base Voltage (V<sub>EBO</sub>): 9 V Collector Current (I<sub>C</sub>): 3 A Collector Power Dissipation (P<sub>C</sub>): 50 W Junction Temperature (T<sub>J</sub>): 150°C Electrical Characteristics (at T<sub>A</sub> = 25°C unless otherwise specified) DC Current Gain (h<sub>FE</sub>): 8 – 40 Collector-Emitter Saturation Voltage (V<sub>CE(sat)</sub>): 3 V (max) Base-Emitter Voltage (V<sub>BE</sub>): ~1.5 V (typ) Collector Cutoff Current (I<sub>CBO</sub>): 1 mA (max) Transition Frequency (f<sub>T</sub>): 4 MHz (typ) Package Information Package Type: TO-220 Mounting Type: Through-hole Pin Configuration: Pin 1: Base Pin 2: Collector Pin 3: Emitter Applications Switching power supplies High-voltage switching circuits CRT display circuits Motor control circuits General-purpose high-voltage amplification #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN
1 Uses0 StarsSISS52DN-T1-GE3
N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52
575 Uses0 StarsIMZC120R040M2HXKSA1
CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 34 A at TC = 100°C • RDS(on) = 40 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Potential applications • General purpose drives (GPD) • EV Charging • Online UPS/Industrial UPS • Solar power optimizer • String inverter • Energy Storage Systems (ESS) • Welding #CommonPartsLibrary #Transistor #FET #Mosfet #CoolSiC™ G2 IMZC120R040M2H
79 Uses0 Stars
