Transistors
A transistor is a type of electronic device that controls the flow of electricity or current through a circuit. It acts as a switch or gate, allowing current to pass through or blocking it, depending on the input signal applied to the transistor. Transistors are widely used in a variety of electronic devices and systems, including computers, televisions, radios, and smartphones. They are also used in a range of industrial and medical applications, such as power supply systems and medical equipment. Flux.ai is home to the world's largest community-driven public library of transistors, with footprints, symbols, datasheets, and simulation models available for a wide range of devices. The library is constantly being updated and expanded by a community of engineers and enthusiasts, making it an invaluable resource for anyone working with transistors. Whether you're a student, hobbyist, or professional engineer, you'll find everything you need to know about transistors at Flux.ai.
KRC119S
Description: KRC119S is a KEC NPN digital transistor with built-in bias resistors, 50 V / 100 mA rating, R1 4.7 kΩ and R2 10 kΩ, supplied in a SOT-23 package for switching, interface, and driver circuits. Keywords: KRC119S, NPN digital transistor, bias resistor transistor, SOT-23, switching driver
0 Uses0 StarsIRFB4110PBF
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Power MOSFET, N-channel enhancement-mode transistor designed for high-current switching applications. Features a 100 V drain-source voltage rating, 180 A continuous drain current, 3.7 mΩ maximum drain-source on-resistance, and TO-220AB package. #PowerMOSFET #NMOSFET #Infineon #IRFB4110PBF #TO220AB #commonpartslibrary #transistor #tht
274 Uses0 StarsBS250P
P-Channel 45V 230mA (Ta) 700mW (Ta) Through Hole TO-92 P-channel enhancement-mode MOSFET transistor used for low-side or high-side load switching and signal control applications, providing voltage-controlled conduction between drain and source. Key specifications (per datasheet): Drain-source voltage (VDS): −45 V Continuous drain current (ID): −0.18 A Gate-source voltage (VGS): ±20 V Package: SOT-23 surface-mount package MOSFET type: P-channel enhancement mode #PChannelMOSFET #EnhancementMode #SOT23 #45V #LowPowerSwitch #DiscreteSemiconductor #CommonPartsLibrary #Transistor #FET #Mosfet #BS250
0 Uses0 StarsEPC2019
GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion
6 Uses0 Stars
