200V 30A 3.4V 51W 82mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS N-channel power MOSFET designed for high-speed switching and power conversion applications. It features a 200 V drain-to-source voltage (VDS), 30 A continuous drain current (ID), 82 mΩ typical RDS(on) at VGS = 10 V, and is housed in a TO-252 (DPAK) package. The device also specifies a 6.5 nC typical total gate charge, 380 pF typical input capacitance, and supports a maximum junction temperature of 150°C. #NChannelMOSFET #PowerMOSFET #200V #30A #TO252 #DPAK #FastSwitching #PowerManagement #DiscreteSemiconductor #XNRUSEMI

XR50P03D DFN-8_L3.0-W3.0-P0.65-BL-4 LCSC Part Number: C42456938 undefined Manufactured by XNRUSEMI(新锐)