Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

RF Amplifiers CMPA901A035F RF-SMD_CMPA901A035F LCSC Part Number: C1558230 undefined Manufactured by Wolfspeed

c2m0025120d TO-247-3_L15.9-W5.0-P5.44-L LCSC Part Number: C2912905 JLCPCB Part Class: Extended Part Manufactured by Wolfspeed