Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N Silicon Carbide (SiC) N-channel Power MOSFET for high-efficiency power switching applications, featuring a 1200 V drain-to-source voltage rating, 71 A continuous drain current, and 22 mΩ typical on-resistance (R_DS(on)). Housed in a TO-247N package, it is designed for high-speed switching and low switching losses. #SiCMOSFET #NChannelMOSFET #PowerMOSFET #1200V #71A #22mOhm #TO247N #PowerSwitching #RohmSemiconductor #SCT3022KLHRC11

N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 77 A continuous drain current (Tc = 25°C), and 22 mΩ typical RDS(on). Housed in a TO-247N package, it is suitable for high-speed switching and high-voltage power conversion circuits. #SiC_MOSFET #N_Channel #650V #77A #22mOhm #TO247N #PowerSwitching #Rohm