High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-TSOP II The AS4C32M16SB-7TCN is a single-data-rate synchronous dynamic random-access memory (SDR SDRAM) device manufactured by Alliance Memory. It is organized internally as a multi-bank array, allowing concurrent access operations across banks to improve effective memory bandwidth compared to simpler asynchronous DRAM architectures. The device is intended for general-purpose embedded memory applications where a synchronous, clock-driven memory interface is required, including embedded systems, industrial controllers, consumer electronics, networking equipment, and other designs that rely on a parallel SDRAM interface for working memory or buffering. As a drop-in style component within Alliance Memory's broader memory portfolio, this part is designed to be pin- and function-compatible with legacy SDR SDRAM devices originally offered by other manufacturers, allowing designers to source a continued-availability alternative for designs that depend on this memory architecture even as some original suppliers have discontinued production. This makes the device particularly useful in long-lifecycle industrial, embedded, and legacy system designs where a guaranteed supply of a specific memory interface and timing profile is critical to sustaining production over many years. The "B" designation in the part family indicates a specific die revision within the AS4C32M16S product line, reflecting a particular generation of internal silicon design while maintaining functional and pinout compatibility with related die revisions in the same footprint. The device communicates over a standard synchronous SDRAM command interface, using a clock-synchronized protocol for row and column addressing, data burst transfers, and bank management, and it supports the auto-refresh and self-refresh mechanisms typical of SDRAM devices to maintain stored data integrity without requiring constant external refresh management by the host controller. Mechanically, the device is housed in a thin small-outline package suited to space-constrained PCB layouts, and it is built for standard surface-mount assembly processes. The "-7TCN" suffix on this part number reflects a specific speed grade, package style, and temperature grade combination within the product family, with this particular variant intended for commercial temperature range operation. The device is supplied in tray packaging for surface-mount assembly and is compliant with RoHS material restrictions, supporting standard environmental and regulatory requirements for electronic components. Spec Sheet Identification Part Number: AS4C32M16SB-7TCN Device Family: AS4C32M16SB Manufacturer: Alliance Memory, Inc. Die Revision: B-die Functional Classification Device Type: Synchronous DRAM (SDR SDRAM) Memory Organization: Multi-bank array architecture Interface Type: Parallel, clock-synchronous command interface Refresh Capability: Supports auto-refresh and self-refresh modes Electrical Characteristics Supply Voltage: Standard 3.3V-class SDRAM supply rating Clock Frequency: Mid-range SDR SDRAM clock speed class Access Timing: Standard SDR SDRAM access time class for its speed grade Environmental & Qualification Temperature Grade: Commercial ("C" suffix designation) RoHS Compliance: Yes Product Positioning: Long-lifecycle, drop-in replacement memory device Package Package Type: Thin Small Outline Package, TSOP-II style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tray packaging #AS4C32M16SB #AllianceMemory #SDRAM #SDRSDRAM #MemoryIC #EmbeddedMemory #TSOP #SurfaceMount #LegacyMemory #DropInReplacement #DRAM #EmbeddedSystems #IndustrialElectronics #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #MemoryComponent #PCBDesign #CommonPartsLibrary #IntegratedCircuit #Memory #AS4C32

Ethernet Controller 10/100 Base-T/TX Bus Interface 80-TQFP-EP (12x12) The LAN9254-I/JRX is an EtherCAT SubDevice (slave) controller developed by Microchip Technology, designed to serve as the communication backbone for industrial automation devices participating in an EtherCAT network. The device integrates dual Ethernet physical layer transceivers directly on-chip, eliminating the need for external PHY components and simplifying the design of EtherCAT-enabled equipment such as servo drives, sensors, I/O modules, and other field devices used in real-time industrial control systems. Architecturally, the controller can operate as either a two-port or three-port node, depending on the network topology required. In its standard configuration it functions as a two-port device supporting daisy-chain connections typical of EtherCAT line topologies. When configured as a three-port device, it gains an additional management interface port that can connect to an external PHY or to another LAN9254, enabling star or tree network topologies and allowing the device to act as a branching point within a larger EtherCAT installation. Each integrated Ethernet PHY operates in full-duplex mode and supports automatic crossover detection, so the device can use either straight-through or crossover cabling without requiring manual configuration. Beyond pure protocol handling, the LAN9254 includes a substantial set of general-purpose digital input and output lines, allowing it to be used in simple field devices without requiring a separate microcontroller. For more complex applications, the device communicates with an external host processor through an integrated host bus interface that behaves like simple memory-mapped SRAM, supporting both 8-bit and 16-bit data widths along with multiple byte-ordering conventions, which makes it straightforward to interface with a wide range of microcontroller and microprocessor architectures. Internally, dual process data RAM buffers manage the exchange of real-time process data between the host application and the EtherCAT communication engine, while a dedicated interrupt line notifies the host of relevant internal events. A key feature of the device is its built-in distributed clock mechanism, which provides high-precision timing synchronization across all nodes in an EtherCAT network. This capability is essential for motion control and other applications where multiple devices must act in tight temporal coordination. The controller also provides configurable status indication through standard network activity and link LEDs, along with optional error and run-state indicators that give visibility into the health and operational state of the device at a glance. Power architecture on the LAN9254 is simplified through an integrated linear regulator, allowing the device to be operated from a single primary supply rail while internally generating the lower voltage needed for its core logic. This reduces the external power supply complexity that would otherwise be required to support separate core and I/O voltage domains. The "-I" designation on this particular part number indicates an industrial-grade temperature rating, making it suitable for deployment in factory floor and other demanding industrial environments where extended thermal range and long-term reliability are required. The device is housed in a surface-mount package consistent with dense industrial control board layouts and is compliant with RoHS material restrictions. Spec Sheet Identification Part Number: LAN9254-I/JRX Device Family: LAN9254 Manufacturer: Microchip Technology Functional Classification Device Type: EtherCAT SubDevice (slave) controller Network Role: Two/three-port configurable node Integrated PHYs: Dual Ethernet physical layer transceivers, on-chip Auto-MDIX Support: Yes, supports direct and crossover cabling Communication & Protocol Features Protocol: EtherCAT Topology Support: Daisy-chain (line), star, and tree topologies Additional Port Mode: Optional third port for branching/tap configurations Clock Synchronization: Integrated distributed clock for high-precision timing Host Interface Interface Type: SRAM-like host bus interface Data Width Support: Selectable bit-width host bus operation Endianness Support: Multiple byte-ordering modes Process Data Handling: Dual process data RAM buffers Interrupt Support: Configurable host interrupt line Digital I/O General-Purpose I/O: Integrated digital I/O lines for microcontroller-less operation Standalone Mode: Supports operation without external microcontroller for simple device designs Power Architecture Supply Configuration: Single primary supply rail Internal Regulation: Integrated linear regulator for core voltage generation Status Indication LED Support: Standard run and link/activity indicators per port Optional Indicators: Configurable error and run-state status indicators Environmental & Qualification Temperature Grade: Industrial ("-I" suffix) RoHS Compliance: Yes Package Package Type: Surface-mount, quad flat package style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, per part suffix designation #LAN9254 #Microchip #EtherCAT #SlaveController #SubDeviceController #IndustrialEthernet #IndustrialAutomation #MotionControl #EmbeddedSystems #FieldDevice #DigitalIO #HostBusInterface #DistributedClock #TQFP #RoHSCompliant #IndustrialGrade #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #SemiconductorIC

N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK) The IRLR7843TRPBF is an N-channel power MOSFET built on Infineon's HEXFET technology platform, originally developed by International Rectifier. It is designed as a low-voltage, high-current switching device intended for applications where minimizing conduction loss and maximizing efficiency are primary design goals. The part is particularly well suited to synchronous switching topologies, where pairs or arrays of MOSFETs alternately conduct to regulate power flow with minimal energy dissipation. This device targets high-density power conversion applications where board space is limited but current demands are substantial, such as notebook computer power delivery, point-of-load converters used in servers, and advanced telecom and datacom equipment. It is commonly found supporting synchronous buck converter stages that step down a higher input rail to a lower output voltage suitable for powering processors, memory, and other low-voltage digital logic. Its low on-resistance characteristic allows it to carry significant current while generating comparatively little resistive heating, which is essential in compact enclosures with constrained thermal budgets. The transistor is fabricated using a refined trench gate process that improves upon earlier HEXFET generations, offering reduced gate charge and lower switching losses alongside its low conduction resistance. This combination makes it effective in both the high-side and low-side positions of a synchronous switching cell, where fast, clean transitions reduce overlap losses and improve overall converter efficiency. The device also offers well-characterized avalanche energy ratings, giving designers confidence in its ruggedness when exposed to transient overvoltage events that can occur during switching, and it presents a very low gate impedance, allowing it to be driven efficiently by standard gate driver circuitry. Mechanically, the part is housed in a surface-mount power package with an exposed tab for enhanced thermal conduction to the host PCB, allowing heat generated during operation to be efficiently transferred away from the silicon die. This package style is widely used in power-dense designs where through-hole packages would be impractical. The device is supplied in a tape-and-reel format suitable for automated assembly and is compliant with RoHS material restrictions, reflecting current environmental and regulatory standards for electronic components. Spec Sheet Identification Part Number: IRLR7843TRPBF Device Family: HEXFET Power MOSFET Manufacturer: Infineon Technologies Functional Classification Device Type: Power MOSFET Channel Type: N-channel Technology: Trench-gate HEXFET (IR MOSFET legacy technology) Logic Level Compatibility: Logic-level gate drive compatible Electrical Characteristics Drain-to-Source Voltage Rating: Low-voltage class, optimized for sub-30V rail applications On-Resistance: Ultra-low on-resistance class Drain Current Capability: High continuous current class Gate Charge: Low gate charge, optimized for fast switching Gate Impedance: Ultra-low gate impedance Avalanche Characteristics: Fully characterized avalanche voltage and current rating Switching & Application Behavior Primary Application: Synchronous buck converter switching stages Suitable Position: High-side and low-side switch positions Target Use Cases: Point-of-load conversion, notebook power delivery, telecom/datacom power systems Thermal & Mechanical Package Type: Surface-mount power package with exposed thermal tab (DPAK-style) Mounting: Surface mount technology (SMT) Thermal Path: Tab-based conduction to PCB for heat dissipation Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active production Packaging Format Supply Format: Tape-and-reel, per part suffix designation #IRLR7843 #Infineon #HEXFET #PowerMOSFET #NChannelMOSFET #SynchronousBuck #PowerElectronics #DCDCConverter #PointOfLoad #PowerConversion #DPAK #SMTPackage #RoHSCompliant #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #PowerDensity #LowRDSon #DiscreteSemiconductor #commonpartslibrary #transistor

N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

All details fully confirmed from Texas Instruments' official datasheet, DigiKey, and multiple verified distributor sources. Here's the complete spec. Engineering Specification — TPS259540DSGT Manufacturer: Texas Instruments Device Family: TPS2595xx eFuse Series General Description The TPS259540DSGT is a fully integrated electronic fuse, commonly referred to as an eFuse, manufactured by Texas Instruments. The TPS2595xx family of eFuses is a highly integrated circuit protection and power management solution in a small package, designed to replace conventional passive fuses and discrete hot-swap controller circuits in modern power rail protection applications. Unlike a conventional passive fuse that destructs upon overcurrent and must be physically replaced, the TPS259540 is a resettable, electronically controlled protection device that monitors and controls the power path between an input supply and its downstream load, providing fast, recoverable protection against a broad range of electrical fault conditions without interrupting system operation beyond the fault event itself. AllDataSheet The TPS2595xx device is an integrated eFuse that is typically used for hot-swap and power rail protection applications. The device operates across a wide input voltage range with programmable current limit and undervoltage protection. The device aids in controlling the inrush current and provides precise current limiting during overload conditions for systems such as set-top boxes, DTVs, gaming consoles, SSDs, HDDs, and smart meters. The device also provides robust protection for multiple faults on the sub-system rail. Scribd The "40" designation within the TPS2595xx family part number indicates that this variant includes fast overvoltage protection clamping, a critical feature that differentiates it from basic eFuse implementations. Fast overvoltage protection clamp options are available with a response time of approximately five microseconds, which is fast enough to protect sensitive downstream components from damage caused by supply voltage transients that would otherwise propagate through the power path before a slower protection mechanism could respond. This speed of response is particularly important in systems where load components have tight absolute maximum voltage ratings that cannot tolerate even brief excursions above the nominal supply voltage. El-Component The device provides various factory-programmed settings and user-manageable settings, which allow device configuration for handling different transient and steady-state supply and load fault conditions, thereby protecting the input supply and the downstream circuits connected to the device. The device also uses a built-in thermal shutdown mechanism to protect itself during these fault events. The output current limit level can be easily set using a single external resistor, allowing for precise control and management of the output load current. Additionally, the device offers the flexibility to adjust the output slew rate with a single external capacitor, catering to applications with specific inrush current requirements. ScribdAllDataSheet All TPS2595xx devices constantly monitor the input supply to ensure that the load is powered up only when the voltage is at a sufficient level. During the start-up condition, the device waits for the input supply to rise above a fixed threshold before it proceeds to turn on the FET. Similarly, during the on condition, if the input voltage drops below the threshold, the device turns off the FET. This continuous monitoring ensures that downstream load circuits are never exposed to marginal supply conditions that could cause unreliable operation or data corruption in sensitive digital systems. Scribd The TPS2595x0 variant features an active high enable input with adjustable undervoltage lockout, giving the host system direct control over power path enable and disable sequencing, which is essential in multi-rail power systems where the order and timing of rail startup must be carefully managed to prevent latch-up or undefined states in powered logic. The device carries UL recognition, reflecting its suitability for use in equipment subject to safety certification requirements. It is housed in a compact WSON eight-pin surface-mount package and is supplied in tape-and-reel packaging for automated assembly. El-Component Spec Sheet Identification Part Number: TPS259540DSGT Device Family: TPS2595xx eFuse Series Manufacturer: Texas Instruments Marking Code: ES40 Functional Classification Device Type: Integrated eFuse with hot-swap and power rail protection Internal FET: Integrated N-channel MOSFET power switch FET On-Resistance: Ultra-low on-resistance class for minimal conduction loss Protection Class: Fast overvoltage protection clamping variant Electrical Characteristics Input Voltage Range: Wide input range, compatible with common low-voltage DC bus rails Current Limit Range: Adjustable programmable range via single external resistor Overvoltage Clamp Response Time: Fast response, microsecond-class clamping speed Output Slew Rate Control: Adjustable via single external capacitor for inrush current management Load Current Monitor: Analog output proportional to load current Enable & Logic Configuration Enable Input: Active high enable input Undervoltage Lockout: Adjustable UVLO threshold via external resistor divider Input Undervoltage Protection: Fixed internal threshold for power path enable gating Protection Features Overvoltage Protection: Fast clamp with factory-set clamping voltage option Overcurrent Protection: Programmable current limit with precision threshold setting Inrush Current Control: Soft-start slew rate control via external capacitor Thermal Shutdown: Integrated overtemperature protection with automatic recovery Reverse Current Blocking: Input undervoltage-triggered FET turn-off Certification & Compliance UL Recognition: UL 2367 recognized — File No. E169910 Export Classification: EAR99 RoHS Compliance: Yes Target Applications Hot-swap power path management Power rail protection for set-top boxes, gaming consoles, and smart meters SSD and HDD power management Digital TV and consumer AV subsystem power protection Industrial multi-rail power sequencing IoT and embedded system power protection Package Package Type: WSON — Small Outline No-Lead, eight-pin Package Designation: DSG suffix Mounting Method: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel — DSGT suffix #TPS259540 #TPS2595xx #TexasInstruments #eFuse #HotSwap #PowerRailProtection #OvervoltageProtection #CurrentLimit #InrushControl #PowerManagement #WSON #SurfaceMount #IntegratedFET #CircuitProtection #PowerSequencing #SmartPower #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #ULRecognized