NPN Bipolar Junction Transistor (BJT) – High-voltage NPN transistor for general-purpose switching and amplification, featuring a 160 V collector-emitter breakdown voltage, 600 mA maximum collector current, and 2.25 W power dissipation. Provides a 130 MHz transition frequency, minimum DC current gain (hFE) of 80 at 10 mA, and 200 mV maximum collector-emitter saturation voltage at 50 mA collector current. Specified for operation over a −55°C to +150°C junction temperature range and housed in a PowerDI™ 5 surface-mount package.
#DiodesIncorporated #DXT5551P513 #NPNTransistor #BJT #HighVoltageTransistor #SwitchingTransistor #AmplifierTransistor #160V #600mA #PowerDI5 #DiscreteSemiconductor #EmbeddedSystems
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