17V Clamp 5A (8/20µs) Ipp Tvs Diode Surface Mount SOT-23-6 USBLC6-4 low-capacitance ESD/TVS protection diode array, 4 data-line protection, 17V clamping voltage, 5A peak pulse current (8/20µs), 3pF typical capacitance, protects VBUS, USB 2.0 high-speed compatible, IEC 61000-4-2 level 4 ESD protection, SOT-23-6 surface mount package.

TPD3E001 Low-Capacitance 3-Channel ESD-Protection for High-Speed Data Interfaces ESD-Protection SOT?553*

13V Clamp 2.5A (8/20µs) Ipp Tvs Diode Surface Mount 5-TSSOP The PESD5V0L4UG,115 is a low-capacitance, unidirectional quad-channel Electrostatic Discharge (ESD) protection diode array from Nexperia. It is designed to protect up to four high-speed signal or data lines from ESD events and other transient voltage spikes while maintaining excellent signal integrity due to its low junction capacitance. Packaged in a compact SOT-353 (SC-88A/5-TSSOP) surface-mount package, it is well suited for space-constrained electronic designs, including communication equipment, portable devices, computers, and consumer electronics. Key Features Quad-channel unidirectional ESD protection for up to 4 signal lines 5 V reverse standoff voltage (VRWM) suitable for 5 V interfaces Low junction capacitance (~16 pF typ.) to minimize signal distortion Low clamping voltage (13 V max.) for effective transient suppression Peak pulse power of 30 W IEC 61000-4-2 Level 4 ESD protection (up to ±20 kV) Ultra-low leakage current (typically 5 nA) Compact SOT-353 (SC-88A) surface-mount package Qualified to AEC-Q100 for automotive applications Ideal for protecting USB, communication interfaces, SIM card lines, audio/video ports, and other sensitive I/O circuits. #PESD5V0L4UG115 #Nexperia #ESDProtection #TVSDiode #TransientProtection #CircuitProtection #QuadChannel #LowCapacitance #AutomotiveGrade #SOT353 #SignalIntegrity #ElectronicsDesign

Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

ESD DIODE 15VC SOT-23-6 The UMW USBLC6-2SC6 is a low-capacitance TVS/ESD protection diode array designed to protect high-speed data interfaces such as USB 2.0 and Ethernet from electrostatic discharge (ESD), electrical fast transients (EFT), and surge events. It integrates dual protection channels in a compact SOT-23-6 package, making it suitable for space-constrained portable and embedded designs. Key Features Dual-line ESD protection for high-speed signal interfaces Supports USB 2.0, 10/100 Ethernet, and other sensitive data lines Very low capacitance (~0.8 pF typical) to preserve signal integrity Operating voltage: 5 V Low clamping voltage for improved downstream IC protection IEC 61000-4-2 ESD protection: ±30 kV air discharge ±30 kV contact discharge IEC 61000-4-4 EFT protection up to 40 A (5/50 ns) IEC 61000-4-5 surge protection up to 6 A (8/20 µs) Peak pulse power capability: 150 W Ultra-low leakage current in the nA range Fast response time (<1 ns typical) Compact SOT-23-6 surface-mount package RoHS, Pb-free, and halogen-free compliant Typical Applications USB data line protection Ethernet interfaces Portable electronics Notebook and desktop PCs Digital cameras Embedded systems and microcontroller USB ports #CommonPartsLibrary #TVS-Diode

ESD DIODE 5VWM 14VC SOT-666-6 The USBLC6-2P6 is a dual-line, rail-to-rail transient voltage suppressor (TVS) diode array in a compact SOT-666 package. It is specifically optimized for protecting USB D+ and D− lines (and similar high-speed differential pairs) while maintaining very low signal distortion due to its low capacitance design. It clamps high-voltage ESD events to safe levels, protecting sensitive ICs such as MCUs, USB PHYs, and transceivers. Designed for USB and high-speed data protection Ideal for USB 2.0 (480 Mbps) interfaces Very low line capacitance Minimizes signal distortion on high-speed differential pairs Bidirectional ESD protection Protects both positive and negative voltage transients Low clamping voltage Typical clamp around ~17 V during surge events High peak pulse current capability Handles ESD strikes (IEC 61000-4-2 compliant, typically ±15 kV air / ±8 kV contact in similar ST USBLC family devices) Rail-to-rail protection structure Protects signal lines relative to VCC and GND Compact SOT-666 package Suitable for very small PCB layouts (phones, USB ports, embedded systems) 2-channel configuration Typically used for D+ / D− pair protection Typical Applications USB 2.0 ports (D+ / D− protection) Smartphones and tablets Embedded systems with external connectors HDMI / Ethernet signal protection (low-capacitance variants also used) Any exposed high-speed data interface requiring ESD protection #CommonPartsLibrary #Diode

ESD and Surge Protection (TVS/ESD) TPD2E001DRLR SOT-553-5_L1.6-W1.2-P0.50-LS1.6-BR LCSC Part Number: C3040099 JLCPCB Part Class: Extended Part Manufactured by Leiditech(雷卯电子) Texas Instruments TPD2E001 low-capacitance 2-channel ESD/TVS protection diode array for high-speed data interfaces, IEC 61000-4-2 Level 4 ESD protection, ±8kV contact discharge and ±15kV air-gap discharge, 1.5pF typical IO capacitance, 1nA max leakage current, 0.9V to 5.5V supply voltage range, suitable for USB 2.0, Ethernet, FireWire, LVDS and other high-speed signal line protection, available in SOT-5, WSON-6, USON-6 and SOP-4 packages. Search Keywords: TPD2E001, TI TPD2E001, Texas Instruments TPD2E001, TPD2E001 ESD protection, TPD2E001 TVS diode, TPD2E001 USB protection, TPD2E001DRL, TPD2E001DRLR, TPD2E001 low capacitance, 2 channel ESD protection, USB 2.0 ESD protection diode, high speed data line protection, low capacitance TVS array, TPD2E001 datasheet, TPD2E001 SOT-5, TPD2E001 WSON-6, TPD2E001 USON-6 Hashtags: #TPD2E001 #TPD2E001DRL #TPD2E001DRLR #TexasInstruments #TIESDProtection #ESDProtection #TVSDiode #TVSArray #ESDDiodeArray #LowCapacitanceTVS #2ChannelESDProtection #USBProtection #USB2Protection #HighSpeedDataProtection #SignalLineProtection #IEC6100042 #Level4ESD #SOT5 #WSON6 #USON6 #SOP4

10A@8/20us 10V 4V 3.3V SOD-523 ESD and Surge Protection (TVS/ESD) ROHS PESD3V3S1BA-N SOD-523_L1.2-W0.8-LS1.6-BI LCSC Part Number: C3036285 JLCPCB Part Class: Extended Part Manufactured by BORN(伯恩半导体) BORN PESD3V3S1BA-N bidirectional ESD protection TVS diode, designed for transient voltage and electrostatic discharge protection of sensitive signal lines, 3.3V reverse stand-off voltage, 4.0V reverse breakdown voltage, 10V clamping voltage, 500µA max reverse leakage current, 13pF typical junction capacitance, 100W peak pulse power, IEC 61000-4-2 ESD protection up to 25kV air discharge and 25kV contact discharge, -55°C to +150°C operating temperature, SOD-523 surface-mount package. Search Keywords: PESD3V3S1BA-N, BORN PESD3V3S1BA-N, PESD3V3S1BA, 3.3V ESD diode, bidirectional ESD protection diode, TVS diode SOD-523, ESD protection SOD-523, low capacitance TVS diode, signal line ESD protection, IEC6100042 ESD diode, 25kV ESD protection diode, BORN TVS diode Hashtags: #PESD3V3S1BAN #PESD3V3S1BA #BORNDiode #BORNESDProtection #ESDProtectionDiode #TVSDiode #BidirectionalTVS #3V3TVS #SignalLineProtection #SOD523 #IEC6100042 #25kVESDProtection #LowCapacitanceTVS