330 Ohms @ 100 MHz 1 Power Line Ferrite Bead 0805 (2012 Metric) 1.5A 70mOhm #CommonPartsLibrary #Filters #FerriteBeadsandChips

820 µH @ 10 kHz 2 Line Common Mode Choke Through Hole 2A DCR 70mOhm (Typ) #commonpartslibrary #cmc #filters

330 Ohms @ 100 MHz 1 Power Line Ferrite Bead 0603 (1608 Metric) 1.5A 70mOhm #CommonPartsLibrary #Filters #FerriteBead #BLM18SG

330µF Molded Tantalum Polymer Capacitor 6.3 V 1411 (3528 Metric) 70mOhm @ 100kHz #CommonPartsLibrary #polymer-Capacitors #KO-CAP® T520

4.7µH Shielded Drum Core, Wirewound Inductor 1.55 A 70mOhm Max 1919 (4848 Metric) #CommonPartsLibrary #Inductor #FixedInductor #SRR4028

10 µH Unshielded Drum Core, Wirewound Inductor 3.2 A 70mOhm Max Nonstandard #commonpartslibrary #inductor

N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB 650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance. #GaNFET #EnhancementMode #650V #70mOhm #41A #PowerTransistor #TO220 #KelvinSource #Renesas #PowerElectronics