N-Channel 650V 120A (Tc) 416W (Tc) Through Hole TO-247-3 #Commonpartslibrary #Transistor #MOSFET #FET #tht #C3M0015065

Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C. #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 77 A continuous drain current (Tc = 25°C), and 22 mΩ typical RDS(on). Housed in a TO-247N package, it is suitable for high-speed switching and high-voltage power conversion circuits. #SiC_MOSFET #N_Channel #650V #77A #22mOhm #TO247N #PowerSwitching #Rohm

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 8A, Isolated TO-220-2 #CommonPartsLibrary #Schottky #Diodes #SingleDiodes

650V Half Bridge Gate Driver with Integrated Bootstrap Diode, 2.5A drive current, SOIC-14 Gate Driver MOSFET IGBT SOIC*3.9x8.7mm*P1.27mm*

N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB 650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance. #GaNFET #EnhancementMode #650V #70mOhm #41A #PowerTransistor #TO220 #KelvinSource #Renesas #PowerElectronics

IGBT 650V 74 A 255 W Through Hole PG-TO220-3-1 #CommonPartsLibrary #Transistor #IGBTs #TrenchStop #IGP40N65

MOSFET 650V, 30A, GaN E-mode, GaNPX package, Bottom-side cooled #CommonPartsLibrary #Mosfet #N-Channel #Transistor

Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 650V, 6A TO-220-2 #CommonPartsLibrary #Schottky #Diodes #SingleDiodes