IRS2181 Series 600 V 1.9 A 20 V Supply Dual High And Low Side Driver 8-PDIP #CommonPartsLibrary #IntegratedCircuit #PowerManagement #GateDriver #IRS2181

Single-Core Arm® Cortex®-A7 Microprocessor (MPU) – 32-bit embedded microprocessor designed for industrial automation, Human-Machine Interfaces (HMI), IoT gateways, edge computing, smart home devices, medical equipment, multimedia systems, and Linux-based embedded applications. Part of the STM32MP1 Series, the STM32MP135FAF7 integrates a single Arm® Cortex®-A7 core operating at up to 1 GHz, with NEON™ SIMD multimedia acceleration and 3D graphics acceleration for enhanced application performance. Supports external DDR3, DDR3L, LPDDR2, and LPDDR3 memory, enabling high-performance operating systems such as Linux. Features dual Gigabit Ethernet, dual USB 2.0, CAN FD, I²C, SPI, UART/USART, SAI, SPDIF, MMC/SD/SDIO, GPIO, and IRDA interfaces for flexible connectivity. Includes advanced security features such as Arm TrustZone®, AES encryption, SHA-1/SHA-2, Secure Boot, Secure Debug, True Random Number Generator (TRNG), tamper detection, and volatile key storage for secure embedded applications. Operates with 1.8 V, 2.5 V, and 3.3 V I/O supplies, supports a −40°C to +105°C junction temperature range, and is packaged in a 320-ball TFBGA (11 × 11 mm). #STMicroelectronics #STM32MP135FAF7 #STM32MP1 #CortexA7 #Microprocessor #LinuxMPU #IndustrialAutomation #EdgeComputing #IoTGateway #GigabitEthernet #TrustZone #EmbeddedLinux #EmbeddedSystems

7-Port Gigabit Managed Ethernet Switch IC – High-performance Layer 2 managed Ethernet switch designed for industrial automation, IoT gateways, embedded networking, automotive networking, IP cameras, networked audio/video systems, and communication equipment. Integrates 7 Gigabit Ethernet ports with 5 integrated 10/100/1000BASE-T PHYs, 1 SGMII interface, and 1 configurable RGMII/MII/RMII interface, enabling flexible network architectures. Supports IEEE 802.3 Ethernet standards, QoS, VLAN (802.1Q), Rapid Spanning Tree Protocol (RSTP), IGMP snooping, LinkMD® cable diagnostics, Energy Efficient Ethernet (EEE), Wake-on-LAN (WoL), port mirroring, rate limiting, and advanced packet filtering for robust managed networking. Features I²C and SPI management interfaces, operates from 1.8 V, 2.5 V, and 3.3 V supplies, and is specified for the −40°C to +85°C industrial temperature range. Packaged in a 128-pin TQFP-EP (14 × 14 mm) for high-density embedded networking designs. #Microchip #KSZ9897STXITR #KSZ9897 #GigabitEthernetSwitch #ManagedSwitch #Layer2Switch #IndustrialEthernet #SGMII #RGMII #IoTGateway #NetworkController #EmbeddedSystems

Three-Phase BLDC Motor Pre-Driver IC – Gate driver for controlling three half-bridges with six external N-channel MOSFETs in three-phase brushless DC motor applications. The Monolithic Power Systems MP6531AGR-Z operates from 5 V to 60 V and includes bootstrap high-side drivers, 100% duty-cycle support, programmable over-current protection, adjustable dead time, UVLO, thermal shutdown, and fault indication. It is housed in a 28-QFN (4 × 4 mm) package and operates from −40°C to +125°C. #MPS #MP6531AGRZ #BLDC #MotorDriver #GateDriver #ThreePhaseMotor #MOSFETDriver #MotorControl #PowerElectronics #EmbeddedSystems

Driver 2A 2-OUT High and Low Side Half Brdg Non-Inv 8-SOIC #CommonPartsLibrary #IntegratedCircuit #PowerManagement #GateDriver #HIP2101

MOSFET DRIVER 1-OUT High and Low Side Non-Inverting with Tube 24-SOIC #CommonPartsLibrary #IntegratedCircuit #PowerManagement #GateDriver #STGAP1

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

Buck Switching Regulator IC Positive Fixed 3.3V 1 Output 2A SOT-23-6 Thin, TSOT-23-6 The AP63200/AP63201/AP63203/AP63205 is a 2A, synchronous buck converter with a wide input voltage range of 3.8V to 32V and fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low-side power MOSFET to provide high-efficiency step-down DC/DC conversion. The AP63200/AP63201/AP63203/AP63205 device is easily used by minimizing the external component count due to its adoption of peak current mode control along with its integrated compensation network. The AP63200/AP63201/AP63203/AP63205 has optimized designs for Electromagnetic Interference (EMI) reduction. The converter features Frequency Spread Spectrum (FSS) with a switching frequency jitter of ±6%, which reduces EMI by not allowing emitted energy to stay in any one frequency for a significant period of time. It also has a proprietary gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times, which further erases highfrequency radiated EMI noise caused by MOSFET switching. The device is available in a low-profile, TSOT26 package. • VIN 3.8V to 32V • 2A Continuous Output Current • 0.8V ±1% Reference Voltage • 22µA Ultralow Quiescent Current • Switching Frequency o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205 • Pulse Width Modulation (PWM) Regardless of Output Load o AP63201 • Supports Pulse Frequency Modulation (PFM) o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load • Fixed Output Voltage o 3.3V: AP63203 o 5.0V: AP63205 • Proprietary Gate Driver Design for Best EMI Reduction • Frequency Spread Spectrum (FSS) to Reduce EMI • Precision Enable Threshold to Adjust UVLO • Protection Circuitry o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown • 12V and 24V distributed power bus supplies • Flat screen TV sets and monitors • Power tools and laser printers • White goods and small home appliances • FPGA, DSP, and ASIC supplies • Home audios • Network systems • Set top boxes • Gaming consoles • Consumer electronics #commonpartslibrary #integratedcircuit #AP63203WU7 #BuckConverter #DCDCConverter #PowerManagement #VoltageRegulator #SynchronousBuck #EmbeddedSystems #IndustrialElectronics #PowerSupply #DiodesInc #3V3Power #ElectronicsDesign

7.2VA Power Transformer 3.3V Primary 6V Secondary Chassis Mount The DA2304-ALD is a compact surface-mount isolation power transformer manufactured by Coilcraft. It is designed primarily for low-voltage DC/DC converter applications, especially in circuits that require galvanic isolation. It is commonly used together with ICs like isolated power drivers (e.g., SN6501) to generate isolated power rails. Type: Isolation / power transformer Mounting: Surface-mount (SMT) Primary Voltage: 3.3 V Secondary Voltage: 6 V (typical) Power Rating: ~7.2 W Turns Ratio: 1 : 2.2 Isolation Voltage: up to 2500 Vrms Windings: Dual primary and dual secondary Core Material: Ferrite Operating Temp: −40°C to +125°C Isolated DC/DC converters Industrial communication interfaces (RS-485, CAN, etc.) Medical or safety-isolated systems Powering isolated gate drivers or transceivers Small footprint (~10 × 8 mm, low profile ~6 mm) #Transformer

N-Channel Power MOSFET – 40 V logic-level N-channel OptiMOS™ 6 power MOSFET optimized for high-efficiency synchronous buck converters, motor drives, battery-powered systems, and industrial power switching. Features a 40 V drain-to-source voltage (VDS), 100 A continuous drain current (TC = 25°C), 1.0 mΩ maximum RDS(on) at VGS = 10 V, and 1.4 mΩ maximum RDS(on) at VGS = 4.5 V. Includes logic-level gate drive, 67 nC typical gate charge, ±20 V gate-source voltage rating, 175°C maximum junction temperature, and 100% avalanche tested for enhanced ruggedness. Housed in an 8-pin PG-TDSON-8 (SuperSO8 5 × 6 mm) surface-mount package. #Infineon #BSC010N04LS6ATMA1 #BSC010N04LS6 #OptiMOS6 #PowerMOSFET #NChannelMOSFET #40V #LogicLevelMOSFET #LowRDSOn #SynchronousBuck #MotorDrive #PowerManagement #EmbeddedSystems

OR Controller N+1 ORing Controller N-Channel N:1 8-VSSOP The LM74610QDGKRQ1 is an automotive-qualified smart bypass ideal diode controller designed to drive an external N-channel MOSFET for reverse polarity protection and input supply OR-ing applications. The device minimizes forward voltage drop and power dissipation compared to traditional Schottky diodes while providing robust protection against reverse battery conditions. It supports operation across a wide automotive input voltage range and is optimized for high-current systems requiring low standby current, fast response, and reliable transient handling. The device is AEC-Q100 qualified for automotive applications and is commonly used in ECU power distribution, battery protection, and redundant supply systems. Engineering Specification Manufacturer: Texas Instruments Manufacturer Part Number: LM74610QDGKRQ1 Device Type: Automotive Smart Diode Controller Qualification Standard: AEC-Q100 Automotive Qualified Functionality: Reverse polarity protection and ideal diode control using external N-channel MOSFET Topology: Charge pump driven ideal diode controller Input Operating Voltage Range: Wide automotive battery operating range with load dump capability support Reverse Input Protection: Supports reverse battery protection without requiring a reverse polarity diode Gate Drive Method: Integrated charge pump for external N-channel MOSFET enhancement Forward Voltage Drop: Determined primarily by external MOSFET RDS(on) Quiescent Current: Ultra-low operating current for always-on automotive systems Transient Immunity: Automotive load dump and ISO transient tolerant design MOSFET Compatibility: External N-channel MOSFET Response Time: Fast reverse current blocking response Operating Temperature Range: Automotive extended temperature range Package Type: VSSOP Package Size: 8-pin small-outline package Mounting Type: Surface mount #Commonpartslibrary #Integratedcircuit #Powermanagement #orcontrollers

Single-channel high-speed low-side MOSFET/IGBT gate driver with 4-A source/8-A sink, split outputs for independent turn-on/off control, dual inverting/noninverting inputs, 4.5–18 V supply, 13 ns typical delay, and UVLO in SOT-23-6.

NAND Gate IC 4 Channel 14-PDIP The SNx4xx00 devices contain four independent, 2-input NAND gates. The devices perform the Boolean function Y = A .B or Y = A + B in positive logic. Features 1• Package Options Include: – Plastic Small-Outline (D, NS, PS) – Shrink Small-Outline (DB) – Ceramic Flat (W) – Ceramic Chip Carriers (FK) – Standard Plastic (N) – Ceramic (J) • Also Available as Dual 2-Input Positive-NAND Gate in Small-Outline (PS) Package • Inputs Are TTL Compliant; VIH = 2 V and VIL = 0.8 V • Inputs Can Accept 3.3-V or 2.5-V Logic Inputs • SN5400, SN54LS00, and SN54S00 are Characterized For Operation Over the Full Military Temperature Range of –55ºC to 125ºC 74LS00 #CommonPartsLibrary #IntegratedCircuit #Logic #Gate #Inverter

N-Channel 200 V 120A (Tc) 714W (Tc) Through Hole TO-247AD (IXFH) # IXFH120N15P ## General Description The IXFH120N15P is a high-current N-channel power MOSFET manufactured by Littelfuse IXYS. It is designed for demanding power switching and power conversion applications requiring low conduction losses, fast switching performance, and high current-handling capability. Built using advanced power MOSFET technology, the device provides excellent efficiency, ruggedness, and thermal performance for industrial power systems, motor drives, battery management equipment, welding systems, uninterruptible power supplies, renewable energy systems, and high-power DC switching applications. Its robust construction and low on-state resistance make it particularly suitable for designs requiring high efficiency and reliable operation under heavy load conditions. ## Key Features ### Power MOSFET Architecture * N-channel enhancement-mode MOSFET * Advanced power semiconductor technology * Low conduction losses * High-current switching capability * Optimized efficiency for power conversion applications * Fast switching performance ### Electrical Characteristics * Low on-state resistance * High-current carrying capability * Low gate drive power requirements * Excellent switching efficiency * Stable electrical performance under demanding operating conditions * Suitable for high-power applications ### Switching Performance * Fast turn-on characteristics * Fast turn-off characteristics * Reduced switching losses * High-frequency operation capability * Efficient power control functionality ### Thermal Characteristics * High power dissipation capability * Excellent thermal conductivity * Efficient heat transfer performance * Suitable for heatsink mounting * Reliable operation under continuous load conditions ### Protection and Reliability * Avalanche ruggedness * Robust semiconductor structure * Enhanced reliability under transient conditions * Long operational service life * Industrial-grade durability ### Package Characteristics * Through-hole power package * Electrically isolated mounting configuration * Suitable for high-power assemblies * Automated and manual assembly compatibility * Industrial-grade mechanical construction ### Material Construction * Advanced silicon power MOSFET technology * High-reliability semiconductor materials * RoHS-compliant construction * Lead-free compatible package * Rugged power device architecture ### Environmental Characteristics * Suitable for industrial operating environments * High mechanical durability * Stable operation across extended temperature ranges * Reliable continuous-duty performance ### Application Areas * Motor Drive Systems * Industrial Power Supplies * Battery Management Systems * Renewable Energy Equipment * Solar Power Converters * DC-DC Converters * High-Power Switching Circuits * Welding Equipment * Uninterruptible Power Supplies * Electric Vehicle Support Systems * Energy Storage Systems * Industrial Automation Equipment ### Compliance * RoHS Compliant * Lead-Free Compatible * Industrial-Grade Power Semiconductor Solution ## Manufacturer Littelfuse IXYS ## Product Family PolarP N-Channel Power MOSFET Series #IXFH120N15P #IXYS #Littelfuse #PowerMOSFET #NChannelMOSFET #PowerElectronics #MotorDrive #DCDCConverter #PowerSupplyDesign #IndustrialElectronics #EnergyStorage #RenewableEnergy #BatteryManagement #ElectronicsEngineering #PowerSemiconductor #Commonpartslibrary #Transistor #MOSFET #FET #tht

OR Controller N+1 ORing Controller N-Channel 1:1 24-VQFN (4x4) The LM74930-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier and power path ON and OFF control with over current and overvoltage protection. The wide input supply of 4 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated high side gate control (HGATE) drives the first MOSFET in the power path. The device allows load disconnect (ON and OFF control) in case of overcurrent, overvoltage and undervoltage event using HGATE control while ideal diode controller (DGATE) drives a second MOSFET to replace a Schottky diode for input reverse polarity protection and output voltage holdup by blocking the reverse current from output to input. The device has integrated current sense amplifier which provides with an adjustable overcurrent and short circuit protection with circuit breaker functionality. The device features an adjustable overvoltage and undervoltage protection feature to protect against supply transients. LM74930-Q1 features MODE pin which can be used to selectively enable or disable reverse current blocking functionality. Features • AEC-Q100 qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • 4-V to 65-V input range • Reverse input protection down to –65 V • Drives external back-to-back N-Channel MOSFETs in common source configuration • Ideal diode operation with 10.5-mV A to C forward voltage drop regulation • Low reverse detection threshold (–10.5 mV) with fast DGATE turn-off response (0.5 µs) • 18-mA peak gate (DGATE) turn on current • 2.6-A peak DGATE turn-off current • Adjustable overcurrent and short circuit protection • Analog current monitor output with 10% accuracy (IMON) • Adjustable overvoltage and undervoltage protection • Low 2.5-μA shutdown current (EN=Low) • MODE pin to allow bi-directional current flow (MODE=Low) • Meets automotive ISO7637 transient requirements with a suitable TVS diode • Available in space saving 24-pin VQFN package 2 Applications • 12-V / 24-V automotive reverse battery protection • Industrial transport • Redundant power supply ORing #IdealDiodeController #SurgeStopper #CircuitBreaker #PowerPathProtection #AutomotiveElectronics #AECQ100 #ReversePolarityProtection #OvercurrentProtection #TexasInstruments #PMIC

P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated

N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52

The NCP4304A and NCP4304B, manufactured by ON Semiconductor, are advanced controllers and drivers designed to optimize synchronous rectification in high-efficiency switch mode power supplies (SMPS). These versatile components are suitable for various topologies, including flyback, forward, and half-bridge resonant LLC converters. Featuring an externally adjustable minimum on and off times, the NCP4304A/B effectively mitigates ringing caused by PCB layout and parasitic elements, ensuring reliable and noise-free operation. The components boast an extremely low turn-off delay time of typically 40 ns, high sink current capability, and an automatic package parasitic inductance compensation system, which together maximize the conduction time of the synchronous rectification MOSFET, thereby enhancing SMPS efficiency. The NCP4304A offers a gate drive clamp of 12 V, while the NCP4304B provides a 6 V clamp, facilitating implementation in 24 V output applications. Key features include precise secondary zero current detection with an adjustable threshold, a maximum operating frequency of 500 kHz, and a low startup and standby current consumption. The devices are available in SOIC-8 and DFN8 packages, making them suitable for high power density AC/DC power supplies, notebook adapters, gaming consoles, and other applications demanding high efficiency.

Automotive H-Bridge DC Motor Driver IC – Fully integrated 40 V H-bridge motor driver with integrated power MOSFETs for brushed DC motors and one winding of a bipolar stepper motor. Operates from a 4 V to 40 V supply, delivers up to 5 A continuous output current, and features a PWM control interface with integrated current-sense output for motor monitoring. Includes an internal charge pump for high-side gate drive, low-RDS(on) MOSFETs, current regulation, undervoltage lockout (UVLO), overcurrent protection (OCP), thermal shutdown, and shoot-through protection. Qualified to AEC-Q100 Grade 1, operates over a −40°C to +125°C junction temperature range, and is housed in an 18-pin QFN (3 × 4 mm) wettable-flank package. #MonolithicPowerSystems #MPS #MPQ6612AGLEAEC1P #MPQ6612A #MotorDriver #HBridge #BrushedDCMotor #StepperMotor #CurrentSense #PWM #PowerMOSFET #AECQ100 #Automotive #EmbeddedSystems

OR Gate IC 4 Channel 14-TSSOP Quadruple 2-input positive-OR gate providing four independent OR logic functions in a single device. It operates from a 2.0 V to 3.6 V supply, supports 24 mA output drive, accepts input voltages up to 5.5 V, features partial-power-down (I_off) support, and offers maximum propagation delay of 3.8 ns at 3.3 V, making it suitable for mixed 3.3 V/5 V logic systems. #TexasInstruments #SN74LVC32AQPWRQ1 #LogicIC #ORGate #QuadORGate #LVCLogic #CMOS #AutomotiveElectronics #DigitalLogic #PCBComponents