• CSD25402Q3A

    CSD25402Q3A

    -76A Id, -20V Vds, NexFET P-Channel Power MOSFET, 7.7mOhm Ron, Qg (typ) 7.5 nC, VSON-8 3.3x3.3mm P-MOS PMOS single VSON*3.3x3.3mm*P0.65mm*NexFET*

    kicad-part-library

    2 years ago

    47 Uses

    0 Stars


  • DMP3018SFV-7

    DMP3018SFV-7

    P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated

    16 days ago

    54 Uses

    0 Stars


  • TPS22916BYFPT

    TPS22916BYFPT

    Power Switch/Driver 1:1 P-Channel 2A 4-DSBGA (0.74x0.74)

    4 years ago

    42 Uses

    0 Stars


  • G900P15T

    G900P15T

    P-Channel 150 V 60A (Tc) 100W (Tc) Through Hole TO-220 #commonpartslibrary #transistor #tht #P-channel

    3 years ago

    0 Uses

    0 Stars


  • BUK6Y33-60PX

    BUK6Y33-60PX

    P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 P-channel enhancement mode MOSFET designed for power switching applications. It features a −60 V drain-source voltage (VDS) rating, 33 mΩ maximum RDS(on) at VGS = −10 V, and supports continuous drain current up to −39 A, making it suitable for high-side load switching and power management circuits #P-Channel #MOSFET #PowerMOSFET #60V #33mOhm

    18 days ago

    49 Uses

    0 Stars


  • ZXMP4A16G

    ZXMP4A16G

    -6.4A Id, -40V Vds, P-Channel MOSFET, SOT-223 P-Channel MOSFET SOT?223*

    53 Uses

    0 Stars


  • DMP3013SFV

    DMP3013SFV

    -12A Id, -30V Vds, P-Channel Power MOSFET, 9.5mOhm Ron, 33.7nC Qg (typ), PowerDI3333-8 P-Channel MOSFET Diodes*PowerDI3333*

    708 Uses

    0 Stars


  • TPS22929D

    TPS22929D

    Power Switch/Driver 1:1 P-Channel 1.8A SOT-23-6

    4 years ago

    4 Uses

    0 Stars


  • SUD19P06-60

    SUD19P06-60

    -19A Id, -60V Vds, TrenchFET P-Channel Power MOSFET, 60mOhm Ron, 40nC Qg, -55 to 150 °C, TO-252-2 TrenchFET P-Channel Power MOSFET TO?252*

    40 Uses

    0 Stars


  • SQ2315ES-T1_BE3

    SQ2315ES-T1_BE3

    P-Channel 12 V 5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236) #CommonPartsLibrary #Transistor #FET #Mosfet #TrenchFET® #SQ2315

    a year ago

    2 Uses

    0 Stars


  • SSM3J328R,LF

    SSM3J328R,LF

    P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F #CommonPartsLibrary #Transistor #P-channel #Mosfet #SSM3J328

    2 years ago

    14 Uses

    0 Stars


  • LM66100QDCKRQ1

    LM66100QDCKRQ1

    OR Controller P-Channel 1:1 SC-70-6 Ideal diode that provides reverse polarity protection and power path ORing with a low forward voltage drop. The Texas Instruments LM66100-Q1 operates from 1.5 V to 5.5 V, supports up to 1 A continuous current, features an 11 mΩ (typical) integrated MOSFET, includes reverse current blocking, overvoltage protection up to 6 V, and is offered in a 6-pin SC70 (DCK) package. #IdealDiode #PowerPathProtection #ReverseCurrentBlocking #ReversePolarityProtection #PowerORing #Automotive #TexasInstruments #LM66100Q1 #SC70 #1A #15Vto55V

    16 days ago

    23 Uses

    0 Stars


  • AON6411

    AON6411

    -85A Id, -20V Vds, P-Channel MOSFET, DFN-8 P-Channel MOSFET AO*DFN*8*1EP*5.55x5.2mm*P1.27mm*EP4.12x4.6mm*

    3 Uses

    0 Stars


  • AP22916BCA4-7

    AP22916BCA4-7

    The AP22916 is a small, low leakage, single P-channel power MOSFET designed for low-power consumption and load-switching applications. LOAD SWITCH X1-WLB0808-4 T&R 3K Power Switch/Driver 1:1 P-Channel 2A X1-WLB0808-4

    2 years ago

    191 Uses

    0 Stars


  • BUK6Y33-60PX

    BUK6Y33-60PX

    P-Channel 60 V 30A (Tc) 110W (Tc) Surface Mount LFPAK56, Power-SO8 #BUK6Y33-60PX #Nexperia #TrenchMOS #PChannelMOSFET #PowerMOSFET #LFPAK56 #PowerSO8 #SurfaceMount #AECQ101 #AutomotiveGrade #PowerManagement #MotorControl #LoadSwitch #DiscreteSemiconductor #CommonPartsLibrary

    18 days ago

    4 Uses

    0 Stars


  • 3N163 SOT-143 4L ROHS

    3N163 SOT-143 4L ROHS

    P-CHANNEL, SINGLE ENHANCEMENT MO

    3 years ago

    2.4k Uses

    0 Stars


  • NTMD6P02R2G

    NTMD6P02R2G

    Mosfet Array 20V 4.8A 750mW Surface Mount 8-SOIC Dual P-Channel Power MOSFET designed for power management and switching applications, rated for a 20 V drain-to-source voltage and up to 6 A continuous drain current. It features logic-level gate drive, low RDS(on) of 27 mΩ maximum at VGS = −4.5 V and ID = −6.2 A, and is housed in an SOIC-8 package. #MOSFET #PowerMOSFET #PChannel #onsemi

    2 days ago

    0 Uses

    0 Stars


  • LM66100-Q1

    LM66100-Q1

    Automotive 1.5-V to 5.5-V, 1.5-A, 0.5-µA IQ ideal diode with integrated FET The LM66100-Q1 is a Single-Input, Single-Output (SISO) integrated ideal diode that is well suited for a variety of applications. The device contains a Pchannel MOSFET that can operate over an input voltage range of 1.5 V to 5.5 V and can support a maximum continuous current of 1.5 A. The chip enable works by comparing the CE pin voltage to the input voltage. When the CE pin voltage is higher than VIN, the device disables and the MOSFET is off. When the CE pin voltage is lower, the MOSFET is on. The LM66100-Q1 also comes with reverse polarity protection (RPP) that can protect the device from a miswired input, such as a reversed battery. Two LM66100-Q1 devices can be used in an ORing configuration similar to a dual diode ORing implementation. In this configuration, the devices pass the highest input voltage to the output while blocking reverse current flow into the input supplies. These devices can compare input and output voltages to make sure that reverse current is blocked through an internal voltage comparator. The LM66100-Q1 is available in a standard SC-70 package characterized for operation over a junction temperature range of –40°C to 150°C. 1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: –40°C to 125°C ambient operating temperature range • Wide operating voltage range: 1.5 V–5.5 V • Reverse voltage standoff on VIN: –6-V absolute maximum • Maximum continuous current (IMAX): 1.5 A • On-Resistance (RON): – 5-V VIN = 79 mΩ (typical) – 3.6-V VIN = 91 mΩ (typical) – 1.8-V VIN = 141 mΩ (typical) • Comparator chip enable (CE) • Channel status indication (ST) • Low current consumption: – 3.6-V VIN shutdown current (ISD,VIN): 120 nA (typical) – 3.6-V VIN quiescent current (IQ, VIN): 150 nA (typical)

    3 months ago

    78 Uses

    0 Stars


  • QM6015D

    QM6015D

    -35A Id, -60V Vds, P-Channel Power MOSFET, 25mOhm Ron, 25.0nC Qg (typ), TO252 P-Channel MOSFET TO?252*

    146 Uses

    0 Stars


  • MIC94062YC6-TR

    MIC94062YC6-TR

    Power Switch/Driver 1:1 P-Channel 2A SC-70-6 #commonpartslibrary #integratedcircuit #powermanagement #powerswitch

    3 years ago

    6 Uses

    0 Stars


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