Operational Amplifiers - Op Amps 4GHz Ultralow bias current FET input Op Amp SOIC-8

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3 The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems. Manufacturer Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor) Part Number 2N3904TFR Transistor Type NPN Bipolar Junction Transistor (BJT) Configuration Single Package / Case SOT-23 (TO-236AB) Mounting Style Surface Mount (SMD/SMT) Collector-Emitter Voltage (VCEO) 40 V Collector-Base Voltage (VCBO) 60 V Emitter-Base Voltage (VEBO) 6 V Collector Current (IC) 200 mA (max) Power Dissipation (PD) ~200 mW to 350 mW (package dependent) DC Current Gain (hFE) 100 to 300 (typical, varies with operating conditions) Transition Frequency (fT) ~300 MHz Collector-Emitter Saturation Voltage (VCE(sat)) ~0.2 V (typical at IC = 10 mA, IB = 1 mA) Operating Temperature Range -55°C to +150°C Polarity NPN Packaging Tape & Reel (TFR suffix) RoHS Compliance Compliant #commonpartslibrary #transistor #bjt

Bluetooth, WiFi 802.11b/g/n/ax, Bluetooth v5.4 Transceiver Module 2.4GHz Integrated, Chip Surface Mount Silicon Labs SiWG917 module is our lowest power Wi-Fi 6 plus Bluetooth LE 5.4, ideal for ultra-low power IoT wireless devices using Wi-Fi®, Bluetooth, Matter, and IP networking for secure cloud connectivity. It is optimal for developing battery operated devices that need long battery life. SiWG917 module includes an ultra-low power Wi-Fi 6 plus Bluetooth Low Energy (LE) 5.4 wireless CPU subsystem, and an integrated micro-controller (MCU) application subsystem, security, peripherals and power management subsystem all in a single 16 x 21.1 x 2.3 mm package. The wireless subsystem consists of a multi-threaded Network Wireless Processor (NWP) running up to 160 MHz, baseband digital signal processing, analog front end, 2.4 GHz RF transceiver and integrated power amplifier. The application subsystem consists of an ARM® Cortex®-M4 running up to 180 MHz, embedded SRAM, flash, ultra-low power sensor hub, and matrix vector processor. The ARM® Cortex®-M4 is dedicated for peripheral and application-related processing, while the NWP runs the wireless and networking stacks on independent threads, thus providing a fully integrated solution that is ready for a wide range of embedded wireless IoT applications. The modules come with modular radio type approvals for various countries, including USA (FCC), Canada (IC/ISED) and Japan (MIC), and are in compliance with the relevant EN standards (including EN 300 328 v2.2.2) for the conformity with the directives and regulations in EU and UK. KEY FEATURES • Wi-Fi 6 Single Band 2.4 GHz 20 MHz 1x1 stream IEEE 802.11 b/g/n/ax • Bluetooth LE 5.4 • Single chip Matter Over Wi-Fi Solution • ARM® Cortex® M4 Processor with FPU subsystem up to 180 MHz with rich set of Digital and Analog Peripherals. • Wi-Fi 6 Benefits: TWT for improved efficiency and longer battery life, MUMIMO/OFDMA for Higher Throughput, network capacity and low latency • Best in Class Device and Wireless Security • WLAN Tx power up to +17.5 dBm with integrated PA • Bluetooth LE Tx power up to +17 dBm with integrated PA • WLAN Rx sensitivity as low as -95.5 dBm • Wi-Fi 4 Standby Associated mode current: 71 μA @ 1-second listen interval • Embedded Flash option up to 8 MB/ optional external Flash up to 16 MB • Embedded PSRAM option up to 2 MB/ optional external PSRAM option up to 16 MB • Ultra-low power sensor hub peripherals • Matrix Vector Processor (MVP) • Embedded Wi-Fi, Bluetooth LE, Matter, and networking stacks supporting wireless coexistence • Three software-configurable MCU application memory options for sharing the RAM between the wireless, system, and application (192/256/320 KB) • Operating temperature: -40 to +85 ºC • Operating supply range: 3.0 to 3.63 V • Supply voltage for GPIOs: 1.71 to 3.63 V #WiFi6 #BluetoothLE54 #IoTModule #WirelessSoC #SiliconLabs #EmbeddedSystems #SmartHome #IndustrialIoT #LowPowerDesign #RFModule #ConnectedDevices #EdgeComputing #MatterReady #PCBDesign #ElectronicsEngineering

Current Limit SW 4-IN 4-OUT -10V to 16V 7.3A Power Switch Driver 1:1 N-Channel 20-SOIC #CommonPartsLibrary #IntegratedCircuit #PowerManagement #GateDriver #ITS724

High Voltage, High Current Darlington Transistor Arrays, 16-DIP #CommonPartsLibrary #IntegradedCircuits #PowerManagement #PowerDistributionSwitches #LoadDrivers #ULN2004

Current Sense Amplifier 1 Circuit 10-uMAX/uSOP #commonpartslibrary #integratedcircuit #linearamplifier #opamp #currentsense

LVDS Digital Isolator 5700Vrms 4 Channel 2.5Gbps 40kV/µs CMTI 32-WFQFN Exposed Pad, CSP The ADN4624 is a quad-channel, signal isolated, low voltage differential signaling (LVDS) buffer that operates at up to 2.5 Gbps with very low jitter. The device integrates Analog Devices, Inc., iCoupler® technology, enhanced for high speed operation to provide drop-in galvanic isolation of LVDS signal chains. AC coupling and/or level shifting to the LVDS receivers and from the LVDS drivers allows isolation of other high speed signals such as current mode logic (CML). The ADN4624 includes a refresh mechanism to monitor the input and output states and ensure they remain the same in the absence of data transitions (for example, at power-on). For lower power consumption and high speed operation with low jitter, the LVDS and isolator circuits rely on 1.8 V supplies. The ADN4624 is fully specified over a wide industrial temperature range and is available in a 28-lead, wide-body, finer pitch SOIC_W_FP package with 8.3 mm creepage and clearance (for 5.7 kV rms or 8 kVPEAK surge and impulse voltages and reinforced insulation at ac mains voltages) or 6 mm × 6 mm LFCSP package with 1.27 mm creepage and clearance (for basic/functional isolation). FEATURES ► 5.7 kV rms and 1.5 kV rms LVDS isolators ► Complies with TIA/EIA-644-A LVDS signal levels ► Quad-channel configuration ► Any data rate up to 2.5 Gbps switching with low jitter ► 10 Gbps total bandwidth across four channels ► 2.15 ns typical propagation delay ► Typical jitter: 0.82 ps rms random, 40 ps total peak ► Lower power 1.8 V supplies ► ±8 kV IEC 61000-4-2 ESD protection across isolation barrier ► High common-mode transient immunity: 100 kV/μs typical ► Safety and regulatory approvals (28-lead SOIC_W_FP package) ► UL (pending): 5700 V rms for 1 minute per UL 1577 ► CSA Component Acceptance Notice 5A (pending) ► VDE certificate of conformity (pending) ► DIN V VDE V 0884-11 (VDE V 0884-11):2017-01 ► VIORM = 849 VPEAK (working voltage) ► Enable or disable refresh (low speed output correctness check) ► Operating temperature range: −40°C to +125°C ► 28-lead, wide-body, finer pitch SOIC_W_FP package with 8.3 mm creepage and clearance or 6 mm × 6 mm LFCSP package with 1.27 mm creepage and clearance APPLICATIONS ► Isolated video and imaging data ► Analog front-end isolation ► Data plane isolation ► Isolated high speed clock and data links ► Multi-gigabit serialization/deserialization (SERDES) ► Board-to-board optical replacement (for example, short reach fiber) #CommonPartsLibrary #Isolator #ADN4624BCPZ #AnalogDevices #LVDS #DigitalIsolator #GalvanicIsolation #HighSpeedCommunication #SERDES

Current Sense Amplifier 1 Circuit 8-MSOP #CommonPartsLibrary #IntegratedCircuit #Linear #Amplifier #OP-AMP #Instrumentation #LT6105

Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifiers 8-SOIC #CommonPartLibrary #IntegratedCircuits #Amplifiers #Instrumentation #OPAmp #BufferAmps #Linear #AD8610

Current Switch Regulator 600mA 20-TQFN-EP (4x4) #CommonPartsLibrary #IntegratedCircuit #PowerManagement #MAX20087

8 Position Connector Receptacle, Center Strip Contacts Surface Mount Gold The TE Connectivity part 2386586-1 is a fine-pitch board-to-board (BTB) PCB receptacle connector designed for compact, high-density electronic devices. It is a vertical surface-mount connector with 8 positions and a 0.4 mm pitch, commonly used in portable electronics, embedded systems, and space-constrained PCB designs. Key Features Connector Type: PCB mount receptacle Connector System: Board-to-board (BTB) Positions: 8-pin Pitch: 0.4 mm fine pitch Rows: 2 Mounting Style: Surface mount (SMT) Orientation: Vertical Stack Height: 0.8 mm low-profile design Contact Plating: Gold (Au) Contact Material: Copper alloy Rated Current: 0.5 A max per contact Operating Voltage: 60 VDC Temperature Range: −40 °C to +85 °C Housing Material: High-temperature thermoplastic Application: Signal transmission in compact electronics Packaging: Tape & Reel for automated assembly This connector is optimized for: Compact embedded systems Wearables and handheld devices High-density PCB stacking Consumer electronics Low-profile modular designs