Power Switch/Driver 1:1 Bipolar 500mA 18-DIP #CommonPartsLibrary #IntegratedCircuit #PowerManagement #Load-Driver #PowerSwitch

Power Switch/Driver 1:1 Darlington 500mA 16-SOIC #commonpartslibrary #integratedcircuit #powerswitchdriver #pmic

Power Switch/Driver 1:1 P-Channel 2.1A SOT-26 #commonpartslibrary #integratedcircuit #powerswitchdriver

Power Switch/Driver 1:1 200mA SOT-23-6 #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

Power Switch/Driver 1:1 N-Channel 2A SOT-23-6 #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

Power Switch/Driver 1:1 Bipolar 500mA 18-SOP (Wide) #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

Power Switch/Driver 1:8 N-Channel 1.2A PG-DSO-36 #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

Power Switch/Driver 1:1 N-Channel 21A PG-TSDSO-14-22 #commonpartslibrary #integratedcircuit #powerswitchdriver

High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign

N-Channel 1200 V 95A (Tc) 427W Through Hole TO-247N Silicon Carbide (SiC) N-channel Power MOSFET for high-efficiency power switching applications, featuring a 1200 V drain-to-source voltage rating, 71 A continuous drain current, and 22 mΩ typical on-resistance (R_DS(on)). Housed in a TO-247N package, it is designed for high-speed switching and low switching losses. #SiCMOSFET #NChannelMOSFET #PowerMOSFET #1200V #71A #22mOhm #TO247N #PowerSwitching #RohmSemiconductor #SCT3022KLHRC11

N-Channel 650V 93A (Tc) 339W (Tc) Through Hole TO-247N Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 77 A continuous drain current (Tc = 25°C), and 22 mΩ typical RDS(on). Housed in a TO-247N package, it is suitable for high-speed switching and high-voltage power conversion circuits. #SiC_MOSFET #N_Channel #650V #77A #22mOhm #TO247N #PowerSwitching #Rohm

Power Switch/Driver 1:1 N-Channel 10A 16-HTSSOP #commonpartslibrary #integratedcircuit #powerswitchdriver

Power Switch/Driver 1:1 N-Channel 20A PowerSSO-16 #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

The BT151-600R specification defines the engineering requirements for a high-power silicon controlled rectifier designed for phase control and switching applications in electronic power systems. This specification establishes the functional, electrical, mechanical, environmental, and quality requirements necessary to ensure reliable switching performance, controlled power regulation, and long-term operational stability. The device is intended for use in applications requiring efficient control of AC power or high-current DC switching, such as motor speed control, light dimming, power regulation circuits, and industrial control systems. It provides controlled conduction behavior triggered by gate activation and remains in conduction until current falls below the holding condition. Engineering Requirements The semiconductor device shall be manufactured using controlled silicon processing techniques to ensure stable thyristor operation, consistent triggering characteristics, and reliable current handling capability. The device shall maintain predictable switching behavior under defined electrical, thermal, and environmental operating conditions. Electrical characteristics shall ensure reliable gate triggering sensitivity, stable on-state conduction, and controlled turn-off behavior under appropriate circuit conditions. The device shall maintain performance integrity under surge conditions and repetitive switching operation within its design limits. Thermal performance shall support efficient heat dissipation through the package structure and mounting interface. The device shall be suitable for attachment to appropriate heat sinking systems to maintain safe operating junction conditions during continuous or high-load operation. Mechanical and package construction shall be suitable for surface-mount or power PCB assembly and shall ensure robust mechanical stability during soldering, handling, and thermal cycling. Workmanship shall be free from defects such as contamination, cracks, bond wire issues, or structural inconsistencies that could impact performance or reliability. Inspection, validation, and testing shall be performed using controlled procedures and calibrated equipment to ensure compliance with all applicable engineering and quality requirements. Any deviation from this specification shall require formal engineering review, documented justification, and approval through established change control processes. Documentation Supporting documentation shall include official datasheets, electrical characterization reports, thermal performance data, qualification test records, inspection reports, and revision-controlled manufacturing documentation. All documentation shall be maintained under formal configuration management and quality assurance systems to ensure traceability and consistency. Revision Control Any modification to this specification shall be managed through formal engineering change control procedures. All revisions shall undergo technical review, validation, and approval prior to implementation to ensure continued compliance with design intent and applicable standards. #EngineeringSpecification #SCR #Thyristor #PowerElectronics #PhaseControl #IndustrialControl #Semiconductor #PowerSwitching #QualityAssurance #EngineeringDocumentation

Power Switch/Driver 1:6 N-Channel 6.6A 32-QFN (6x6) #commonpartslibrary #integratedcircuit #powermanagement #powerswitchdriver

P-Channel 30 V 11A (Ta), 35A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UX) P-channel enhancement mode MOSFET designed for power switching and power management applications. It features a −30 V drain-source voltage (VDS) rating, −11 A continuous drain current (TA = +25°C), a maximum RDS(ON) of 12 mΩ at VGS = −10 V (21 mΩ at −4.5 V), and is housed in a PowerDI3333-8 (Type UX) package with an ESD-protected gate. #PChannelMOSFET #EnhancementModeMOSFET #30V #11A #LowRDSOn #PowerManagement #PowerSwitching #DCDCConverter #PowerDI33338 #DiodesIncorporated