Voltage Level Translator Bidirectional 1 Circuit 1 Channel 420Mbps SC-70-6 #CommonPartsLibrary #IntegratedCircuit #logic #Bidirectional #translator #LevelShifter

Voltage Level Translator Bidirectional 1 Circuit 1 Channel 420Mbps 6-USON (1.6x1.6) #commonpartslibrary #integratedcircuit #voltage #level #translator

High- and Low-Side, Bidirectional, Zero-Drift, Current-Sense Amplifier With Enhanced PWM Rejection, 20V/V, SOIC-8 current monitor shunt sensor bidirectional high low SOIC*3.9x4.9mm*P1.27mm*

Voltage Level Translator Bidirectional 1 Circuit 8 Channel 60Mbps 20-TSSOP This device is an 8-bit non-inverting level translator which uses two separate configurable power-supply rails. The A port tracks the VCCA pin supply voltage. The VCCA pin accepts any supply voltage between 1.4V and 3.6V. The B port tracks the VCCB pin supply voltage. The VCCB pin accepts any supply voltage between 1.65V and 5.5V. Two input supply pins allows for low Voltage bidirectional translation between any of the 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. When the output-enable (OE) input is low, all outputs are placed in the high-impedance (Hi-Z) state. To put the device in the Hi-Z state during power-up or power-down periods, tie OE to GND through a pulldown resistor. The current-sourcing capability of the driver determines the minimum value of the resistor. • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 (A port): – 2000 V Human Body Model (A114-B) – 150 V Machine Model (A115-A) – 1000 V Charged-Device Model (C101) • IEC 61000-4-2 ESD (B-port): – ± 8kV Contact Discharge – ± 6kV Air Discharge #commonpartslibrary #integratedcircuit #logic #translator #levelshifter

4-Bit Bidirectional Voltage-Level Translator, Auto Direction Sensing and ±15-kV ESD Protection, 1.2 - 3.6V APort, 1.65 - 5.5V BPort, SOIC-14 Level-Shifter CMOS-TTL-Translation SOIC*14*7mm*P1.27mm*

Quad bidirectional transil, Suppressor for ESD protection, 5V Standoff, 4 Channels, SOIC-8 ESD protection suppression transient SOIC*3.9x4.9mm*P1.27mm*

Dual bidirectional I2C Bus and SMBus voltage level translator, VSSOP-8 #CommonPartsLibrary #IntegratedCircuits #Logic #Translators #Level Shifters #PCA9306

The modules makes it simple to use with microcontroller's UART to to create bidirectional RS485 networks. #RS485-TTL #Module

I2C Isolator with Bidirectional Clock and Data and three 2/1 Auxiliary GPIOs, SOIC-16 i2c isolator additional gpio SOIC*7.5x10.3mm*P1.27mm*

Voltage Level Translator Bidirectional 1 Circuit 1 Channel 420Mbps SOT-23-6 #commonpartslibrary #integratedcircuit #voltage #level #translator

The FS8205A is a dual N-channel enhancement-mode power MOSFET designed primarily for lithium-ion and lithium-polymer battery protection applications. Manufactured by several semiconductor vendors including Fortune Semiconductor, this device integrates two low on-resistance MOSFETs within a compact surface-mount package, enabling efficient bidirectional current control for battery charging and discharging systems. The device is commonly paired with single-cell battery protection controller ICs such as the DW01A to provide overcharge, overdischarge, overcurrent, and short-circuit protection in portable electronic products. Its low drain-to-source resistance minimizes conduction losses and improves overall battery efficiency while maintaining compact PCB layout requirements. The FS8205A is widely used in battery management systems, portable consumer electronics, rechargeable battery packs, USB-powered devices, IoT hardware, and embedded power management circuits requiring reliable load switching and battery protection functionality. Engineering Specification Device Type Dual N-channel power MOSFET Transistor Technology Enhancement-mode MOSFET architecture Channel Configuration Dual independent N-channel MOSFETs Switching Characteristics Low on-resistance for efficient power switching Gate Characteristics Logic-level gate drive compatibility Current Handling Optimized for battery charge and discharge current control Power Efficiency Low conduction loss for improved battery runtime Protection System Compatibility Designed for lithium battery protection controller integration Thermal Characteristics Compact thermal-efficient surface-mount structure Package Type SOP-8 surface-mount package Mounting Style Surface mount technology Reliability Features Stable switching performance and robust load handling capability Applications Lithium-ion battery protection Battery management systems Portable electronics Rechargeable battery packs USB-powered devices Power path switching Embedded systems Consumer electronics IoT hardware Load switching circuits Manufacturer Commonly manufactured by Fortune Semiconductor and compatible vendors #commonpartslibrary #mosfet #dualmosfet #nchannelmosfet #batteryprotection #batterymanagement #powermanagement #powerelectronics #embeddedhardware #consumerelectronics #surfaceountcomponents #electronicsdesign #lithiumbattery #loadswitch #portableelectronics

Voltage Level Translator Bidirectional 1 Circuit 8 Channel 100Mbps 20-USON (4x2) #commonpartslibrary #integratedcircuit #translator

Current Sensor 30A 1 Channel Hall Effect, Open Loop Bidirectional 8-SOIC (0.154", 3.90mm Width) #commonpartslibrary #current #sensor

Current Sensor 50A 1 Channel Open Loop Bidirectional Module Closed-loop Hall effect current sensor designed for isolated measurement of DC, AC, and pulsed currents. The LEM HOB 50-P provides a nominal primary current measurement range of ±50 A, with a 5 V supply voltage, voltage output interface, and galvanic isolation between primary and secondary circuits. It is designed for PCB mounting applications requiring accurate current sensing. #CurrentSensor #HallEffectSensor #LEM #ClosedLoopSensor #PowerElectronics #PCBComponent

Current Sensor 40A 1 Channel Hall Effect, Differential Bidirectional 8-SOIC (0.154", 3.90mm Width) #commonpartslibrary #sensor #currentsensor #hallsensor #integratedcircuit

33V (Typ) Clamp 2.7A (8/20µs) Ipp Tvs Diode Surface Mount 2-X1SON (1x0.6) The ESD601-Q1 is a bidirectional ESD protection diode. The ESD601-Q1 is offered in the industry standard 0402 (DPY) package, and offers an IEC 61000-4-2 protection level of 15kV. The device can clamp 8/20μs surges with peak pulse currents up to 2.7A in accordance with the IEC 61000-4-5 standard. The low capacitance and low leakage current provide protection against transient events in a variety of systems and applications. This protection is key for many applications, such as smaller form factors and faster data speeds, which are becoming more popular over time. Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±15kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20µs) • I/O capacitance: 0.3pF (typical) • Ultra low leakage current: 1nA (typical) • Low dynamic resistance 0.9Ω (typical) • Industry standard 0402 package 2 Applications • Automotive Antenna ESD Protection • RF Signal ESD Protection • Near Field Communications (NFC) • Automotive SerDes w/Power over Coax • USB Type-C (short-to-Vbus tolerant) #CommonPartsLibrary #Diode #TVS

1/1 Transceiver Half CANbus 8-SOIC The SN65HVD230DR is a high-speed Controller Area Network (CAN) transceiver designed to interface a CAN protocol controller with the physical two-wire CAN bus. It operates as a differential line driver and receiver, translating logic-level signals into robust bus-level signals suitable for automotive, industrial, and distributed control applications. The device is optimized for reliable communication in electrically noisy environments and supports low-power operation, making it suitable for systems requiring energy efficiency and extended operational stability. This transceiver conforms to widely adopted CAN physical layer standards and is intended for use in systems requiring high data integrity, fault tolerance, and electromagnetic compatibility. It integrates protection features and supports standby functionality to reduce system power consumption when communication is inactive. Functional Overview The device provides bidirectional signal conversion between a CAN controller and the differential CAN bus lines. It features a transmit data input and a receive data output, enabling full-duplex communication at the protocol level. The driver stage generates differential output signals on the bus, while the receiver stage detects and translates bus signals back into logic-level data. An internal control mechanism allows the device to enter a low-power standby mode, reducing current consumption when active communication is not required. The transceiver includes slope control capability to manage signal edge rates, which helps minimize electromagnetic interference and improves signal integrity across the network. Electrical Characteristics The transceiver operates from a single low-voltage supply and is designed for compatibility with modern microcontrollers and digital logic systems. It provides differential output drive capability with controlled rise and fall characteristics. The receiver is designed with high input sensitivity and noise immunity to ensure accurate signal detection under varying bus conditions. The device includes thermal protection and safeguards against bus faults, including short-circuit conditions. Its internal circuitry is designed to maintain stable operation across a wide range of environmental conditions and supply variations. Interface Requirements The logic interface is compatible with standard digital input and output levels, allowing direct connection to a CAN controller. The bus interface consists of two differential lines that connect to the CAN network. Proper termination and layout practices are required to ensure optimal communication performance and compliance with CAN network design guidelines. Operating Conditions The device is intended for operation across a broad temperature range suitable for industrial and automotive environments. It maintains functional integrity under typical voltage fluctuations and environmental stresses encountered in embedded systems. Protection and Reliability Features The transceiver incorporates protection mechanisms to guard against overcurrent, thermal overload, and electrostatic discharge. It is designed to maintain communication reliability even in the presence of transient disturbances and electrical noise. Packaging and Integration The SN65HVD230DR is provided in a compact surface-mount package suitable for automated assembly. Its pin configuration supports straightforward integration into printed circuit board designs with minimal external components. #CommonPartsLibrary #IntegratedCircuits #Interface #Drivers #Receivers #Transceivers #65HVD230