Bipolar (BJT) Transistor NPN - Surface Mount TO-252AA. #CommonPartsLibrary #TransistorBJT #FJD5553

Bipolar (BJT) Transistor NPN 40 V 300MHz 1 W Surface Mount SOT-223. #CommonPartsLibrary #TransistorBJT #PZT2222

Bipolar (BJT) Transistor NPN 25 V 50 mA 50MHz 625 mW Through Hole TO-92-3 #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 250 mW Surface Mount TO-236AB (SOT-23) #CommonPartsLibrary #TransistorBJT #PMBT4403

Bipolar (BJT) Transistor NPN 40V 600mA 300MHz 625mW Through Hole TO-92-3 #CommonPartsLibrary #TransistorBJT #KSP2222

Bipolar (BJT) Transistor NPN 85MHz Through Hole TO-3P-3 #CommonPartsLibrary #TransistorBJT #NJW44

Bipolar (BJT) Transistor NPN 45V 100 mA 300MHz 500 mW Through Hole TO-92-3 #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 260mW Surface Mount SOT-723 #CommonPartsLibrary #Transistors #Bipolar(BJT) #NPN #SingleBipolarTransistors #BC847

P-Channel 40V 40A (Tc) 2.5W (Ta), 62.5W (Tc) Surface Mount TO-252 (DPAK) #Commonpartslibrary #Transistor #BJT

Bipolar (BJT) Transistor PNP 45 V 1.5 A 1.25 W Through Hole SOT-32 #CommonPartsLibrary #Transistors #Bipolar(BJT) #PNP #SingleBipolarTransistors

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important. Key Features Dual PNP transistor configuration in a single package Matched transistor pair for improved circuit stability Low collector-emitter saturation voltage High current gain consistency between channels Compact SOT-363 (SC-88) package for space-constrained designs Suitable for low-power and signal-level applications Electrical Characteristics (typical values unless otherwise noted) Collector-Emitter Voltage (VCEO): -45 V Collector-Base Voltage (VCBO): -50 V Emitter-Base Voltage (VEBO): -5 V Continuous Collector Current (IC): -100 mA per transistor Power Dissipation (Ptot): ~250 mW total DC Current Gain (hFE): 100 to 300 Transition Frequency (fT): ~100 MHz Package Information Package Type: SOT-363 (SC-88) Mounting: Surface Mount Pin Count: 6 Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout) Applications Differential amplifier input stages Current mirror circuits Signal amplification Analog front-end designs Matched pair transistor applications Additional Notes The two transistors are thermally coupled within the same package, improving matching over temperature variations Ideal for precision analog circuits requiring closely matched transistor characteristics Commonly used in compact and high-density PCB layouts #commonpartslibrary #transistor #bjt #pnp

Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 625 mW Through Hole TO-92-3 #CommonPartsLibrary #Transistors #Bipolar(BJT) #PNP #SingleBipolarTransistors

Bipolar (BJT) Transistor NPN 60V 15A 6MHz 115 W Through Hole TO-204 (TO-3) #commonpartslibrary #transistor #bjt

Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 310 mW Surface Mount SOT-23-3 #CommonPartsLibrary #TransistorBJT #BC807

Bipolar (BJT) Transistor NPN 250V 16A 4MHz 250 W Through Hole TO-204 (TO-3) #commonpartslibrary #transistor #bjt #npn #tht

Bipolar (BJT) Transistor NPN - Darlington 110 V 1.5 A 150MHz 1 W Surface Mount SOT-223-4

Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3 The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems. Manufacturer Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor) Part Number 2N3904TFR Transistor Type NPN Bipolar Junction Transistor (BJT) Configuration Single Package / Case SOT-23 (TO-236AB) Mounting Style Surface Mount (SMD/SMT) Collector-Emitter Voltage (VCEO) 40 V Collector-Base Voltage (VCBO) 60 V Emitter-Base Voltage (VEBO) 6 V Collector Current (IC) 200 mA (max) Power Dissipation (PD) ~200 mW to 350 mW (package dependent) DC Current Gain (hFE) 100 to 300 (typical, varies with operating conditions) Transition Frequency (fT) ~300 MHz Collector-Emitter Saturation Voltage (VCE(sat)) ~0.2 V (typical at IC = 10 mA, IB = 1 mA) Operating Temperature Range -55°C to +150°C Polarity NPN Packaging Tape & Reel (TFR suffix) RoHS Compliance Compliant #commonpartslibrary #transistor #bjt