The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

Idealized source of current.

The DMN10H220L, manufactured by Diodes Incorporated, is a 100V N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 100V, with RDS(on) values of 220mΩ at VGS = 10V and 250mΩ at VGS = 4.5V. It supports a continuous drain current (ID) of up to 1.6A at TA = +25°C. The component is optimized for high-efficiency power management applications, including load switches, and offers low input capacitance, fast switching speed, and low input/output leakage. The DMN10H220L is housed in a SOT23 package, is fully RoHS compliant, and is available in lead-free, halogen-free, and antimony-free "Green" versions. Additionally, an automotive-compliant variant (DMN10H220LQ) is available, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

Diode for alternating current. See https://en.wikipedia.org/wiki/DIAC

Simple plug-and-play breadboard power supply with current monitoring output, LED indicators, switches for both rails, and decoupling capacitors.

Reference design for Li-ion single cell charger based on TP4056 IC. Rprog setting output current to 900mA. VIN and BAT connector are block terminal connectors. #Template #module #referenceDesign #charger #TP4056 #reusable #module #batterycharger #sublayout

The OPA835 and OPA2835 from Texas Instruments are single and dual ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for optimal performance in battery-powered and portable systems. Operating over a power supply range of 2.5 V to 5.5 V, these op amps consume only 250 µA per channel and offer a unity gain bandwidth of 56 MHz, making them industry leaders in performance-to-power ratio for rail-to-rail amplifiers. These components feature a quiescent current of 250 µA/ch (typical), with a power-down mode reducing current to 0.5 µA (typical), a slew rate of 160 V/µs, a rise time of 10 ns for a 2 V step, and a settling time of 55 ns to 0.1% for a 2 V step. Additional features include a signal-to-noise ratio (SNR) of 0.00015% (-116.4 dBc) at 1 kHz (1 VRMS), total harmonic distortion (THD) of 0.00003% (-130 dBc) at 1 kHz (1 VRMS), and a wide input voltage noise of 9.3 nV/√Hz at 100 kHz. The OPA835 and OPA2835 provide rail-to-rail output swing and input voltage range from -0.2 V to 3.9 V (5-V supply), supporting high-density, low-power signal conditioning applications with an operating temperature range from -40°C to +125°C. These components come in various package options, ensuring flexible integration into diverse electronic designs.

This project is a Advanced Dual Cell Lithium-Ion/Lithium-Polymer Charge Management Controllers utilizing the MCP73844 integratedcircuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. #project #Template #charger #MCP73844 #2cell #referenceDesign #batterycharger #template #bms #microchip #reference-design #polygon /

Reference design for Li-ion single cell charger based on TP4056 IC. Rprog setting output current to 900mA. VIN and BAT connector are block terminal connectors. #Template #module #referenceDesign #charger #TP4056 #reusable #module #batterycharger #sublayout

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The Texas Instruments OPA835 and OPA2835 are ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for operation across a wide power supply range of 2.5 V to 5.5 V with a single supply or +1.25 V to +2.75 V with a dual supply. These components are notable for their industry-leading performance-to-power ratio, which features a quiescent current of just 250 µA per channel and a unity gain bandwidth of 56 MHz. They are ideal for battery-powered, portable applications where power efficiency is critical, without compromising on high-frequency performance. The OPAx835 series brings the added benefit of a power-savings mode, reducing current consumption to less than 1.5 µA, making them an attractive choice for high-frequency amplifiers in battery-powered systems. Their compact package options, including SOT-23, SOIC, VSSOP, UQFN, and QFN, cater to space-constrained applications, providing a versatile solution for low-power signal conditioning, audio ADC input buffers, low-power SAR and ΔΣ ADC drivers, portable systems, low-power systems, high-density systems, and ultrasonic flow meters.

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

This project is a Lithium-ion battery charger circuit utilizing the MCP73831 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 500mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #microchip #reference-design #polygon.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.

This project is a Lithium-ion battery charger circuit utilizing the STC4054 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 800mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #STC4054 #stm #reference-design #polygon

Allows turning current on and off. See https://en.wikipedia.org/wiki/Analogue_switch

The LS3018N, manufactured by iSion, is an N-Channel Enhancement Mode MOSFET designed for low voltage drive applications, making it ideal for portable equipment. Available in a compact SOT-323 package, this MOSFET features low on-resistance and fast switching speeds, facilitating easy drive circuit design and parallel configurations. The device operates with a gate-source voltage as low as 2.5V and can handle a continuous drain current of up to 100mA, with a peak drain current of 400mA. The LS3018N supports a maximum drain-source voltage of 60V and a gate-source voltage of +20V. It offers robust thermal performance with a junction-to-ambient thermal resistance of 833°C/W and is compliant with RoHS standards. Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage range of 0.8V to 1.5V, and a static drain-source on-resistance as low as 3.0Ω at VGS of 4V. The component also features minimal input capacitance, making it suitable for high-speed switching applications.

A class of rotary electrical motors that converts direct current (DC) electrical energy into mechanical energy.

An OpAmp-based analog integrator circuit. In its current configuration, it will calculate the integral of a simple sine wave. Expected integral: https://www.desmos.com/calculator/lxiqgxe8pf Note: Lower the time step to get a better approximation (at the cost of speed). 100ns works well.

This project is a H-Bridge Circuit used to control the rotation direction of a DC motor. It uses resistors, diodes, and transistors to alternately forward and reverse the current flow. #HBridge #project #Template #projectTemplate

This project is a Lithium-ion battery charger circuit utilizing the LTC4054 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 800mA charge current. #project #Template #charger #reusable #module #batterycharger #template #bms #analog

A type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers