GW2AR-LV18QN88C8/I7 GOWIN GW2ANR series FPGA, non-volatile Arora family FPGA with integrated SDRAM and NOR Flash, fabricated on 55nm SRAM technology, 1.0V core voltage, low-power architecture with dynamic clock control, high-performance DSP resources, high-speed LVDS interfaces, abundant block SRAM memory, hot-swap support, configurable I/O standards including LVCMOS, LVTTL, SSTL, HSTL, PCI, LVDS and MLVDS, programmable drive strength and pull-up/pull-down options, designed for high-speed, low-cost embedded, industrial, communication and signal-processing applications. Search Keywords: GW2ANR, GOWIN GW2ANR, Arora FPGA, GOWIN FPGA, non volatile FPGA, FPGA with SDRAM, FPGA with NOR Flash, 55nm FPGA, low power FPGA, LVDS FPGA, DSP FPGA, embedded FPGA, GW2ANR series, GOWIN Arora family, programmable logic device Hashtags: #GW2ANR #GOWINGW2ANR #GOWINFPGA #AroraFPGA #FPGAFPGA - Field Programmable Gate Array GW2ANR-LV18QN88C8/I7

ESD DIODE 15VC SOT-23-6 The UMW USBLC6-2SC6 is a low-capacitance TVS/ESD protection diode array designed to protect high-speed data interfaces such as USB 2.0 and Ethernet from electrostatic discharge (ESD), electrical fast transients (EFT), and surge events. It integrates dual protection channels in a compact SOT-23-6 package, making it suitable for space-constrained portable and embedded designs. Key Features Dual-line ESD protection for high-speed signal interfaces Supports USB 2.0, 10/100 Ethernet, and other sensitive data lines Very low capacitance (~0.8 pF typical) to preserve signal integrity Operating voltage: 5 V Low clamping voltage for improved downstream IC protection IEC 61000-4-2 ESD protection: ±30 kV air discharge ±30 kV contact discharge IEC 61000-4-4 EFT protection up to 40 A (5/50 ns) IEC 61000-4-5 surge protection up to 6 A (8/20 µs) Peak pulse power capability: 150 W Ultra-low leakage current in the nA range Fast response time (<1 ns typical) Compact SOT-23-6 surface-mount package RoHS, Pb-free, and halogen-free compliant Typical Applications USB data line protection Ethernet interfaces Portable electronics Notebook and desktop PCs Digital cameras Embedded systems and microcontroller USB ports #CommonPartsLibrary #TVS-Diode

JEU0524P is a unidirectional TVS diode array in DFN2510-10L package, designed for ESD protection with 5V reverse working voltage, 6.0 to 9.0V breakdown voltage, ultra low capacitance of 0.5pF typical, and peak pulse power of 100W at 8/20μs waveform.TVS SEU0524PC DFN2510-10_L2.5-W1.0-P0.50-BL LCSC Part Number: C964550 JLCPCB Part Class: Extended Part Manufactured by SALLTECH(萨瑞)

Darlington transistor array driver ULN2803A SOP-18_L11.4-W7.6-P1.27-LS10.6-BL LCSC Part Number: C845537 JLCPCB Part Class: Extended Part Manufactured by UMW(友台半导体)

ESD DIODE 5VWM 14VC SOT-666-6 The USBLC6-2P6 is a dual-line, rail-to-rail transient voltage suppressor (TVS) diode array in a compact SOT-666 package. It is specifically optimized for protecting USB D+ and D− lines (and similar high-speed differential pairs) while maintaining very low signal distortion due to its low capacitance design. It clamps high-voltage ESD events to safe levels, protecting sensitive ICs such as MCUs, USB PHYs, and transceivers. Designed for USB and high-speed data protection Ideal for USB 2.0 (480 Mbps) interfaces Very low line capacitance Minimizes signal distortion on high-speed differential pairs Bidirectional ESD protection Protects both positive and negative voltage transients Low clamping voltage Typical clamp around ~17 V during surge events High peak pulse current capability Handles ESD strikes (IEC 61000-4-2 compliant, typically ±15 kV air / ±8 kV contact in similar ST USBLC family devices) Rail-to-rail protection structure Protects signal lines relative to VCC and GND Compact SOT-666 package Suitable for very small PCB layouts (phones, USB ports, embedded systems) 2-channel configuration Typically used for D+ / D− pair protection Typical Applications USB 2.0 ports (D+ / D− protection) Smartphones and tablets Embedded systems with external connectors HDMI / Ethernet signal protection (low-capacitance variants also used) Any exposed high-speed data interface requiring ESD protection #CommonPartsLibrary #Diode

ESD and Surge Protection (TVS/ESD) TPD2E001DRLR SOT-553-5_L1.6-W1.2-P0.50-LS1.6-BR LCSC Part Number: C3040099 JLCPCB Part Class: Extended Part Manufactured by Leiditech(雷卯电子) Texas Instruments TPD2E001 low-capacitance 2-channel ESD/TVS protection diode array for high-speed data interfaces, IEC 61000-4-2 Level 4 ESD protection, ±8kV contact discharge and ±15kV air-gap discharge, 1.5pF typical IO capacitance, 1nA max leakage current, 0.9V to 5.5V supply voltage range, suitable for USB 2.0, Ethernet, FireWire, LVDS and other high-speed signal line protection, available in SOT-5, WSON-6, USON-6 and SOP-4 packages. Search Keywords: TPD2E001, TI TPD2E001, Texas Instruments TPD2E001, TPD2E001 ESD protection, TPD2E001 TVS diode, TPD2E001 USB protection, TPD2E001DRL, TPD2E001DRLR, TPD2E001 low capacitance, 2 channel ESD protection, USB 2.0 ESD protection diode, high speed data line protection, low capacitance TVS array, TPD2E001 datasheet, TPD2E001 SOT-5, TPD2E001 WSON-6, TPD2E001 USON-6 Hashtags: #TPD2E001 #TPD2E001DRL #TPD2E001DRLR #TexasInstruments #TIESDProtection #ESDProtection #TVSDiode #TVSArray #ESDDiodeArray #LowCapacitanceTVS #2ChannelESDProtection #USBProtection #USB2Protection #HighSpeedDataProtection #SignalLineProtection #IEC6100042 #Level4ESD #SOT5 #WSON6 #USON6 #SOP4

TVS SM24CANB-02HTG SOT-23-3_L2.9-W1.3-P1.90-LS2.4-BR LCSC Part Number: C2937019 JLCPCB Part Class: Extended Part Manufactured by TECH PUBLIC(台舟) The SM24CANB TVS Diode Array is designed to protect automotive Controller Area Network (CAN) lines from damage due to electrostatic discharge (ESD), electrical fast transient (EFT), and other overvoltage transients. The SM24CANB Series can absorb repetitive ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard without performance degradation and safely dissipate 10A of 8/20µs surge current (IEC 61000-4-5 2nd Edition) with very low clamping voltages.