Raspberry Pi Zero is the smallest computer board ever created by the Raspberry Pi Foundation. Released in 2015, Pi Zero only measures 6.5cm by 3cm, just half the size of the standard Raspberry Pi board. #raspberrypi #raspberry

Template of shield family MKR Arduino #project-template #Arduino #template #project #arduinomkr #zero

Use this layout to incorporate an Arduino Zero into your projects.

I2S bus & SD for sound, music & digital audio data #Microcontrollers

Zero Cross Opto-Triac, Vdrm 400V, Ift 5mA, DIP-6

Zero Cross Opto-Triac, Vdrm 800V, Ift 15mA, DIP-6 #Relay #SolidState #commonpartslibrary

Zero Cross Opto-Triac, Vdrm 400V, Ift 10mA, DIP6 #Relay #SolidState #commonpartslibrary

Zero Cross Opto-Triac, Vdrm 600V, Ift 5mA, DIP-6

Zero Cross Opto-Triac, Vdrm 600V, Ift 10mA, IT 1.2A, SOIC-7 #Relay #SolidState #commonpartslibrary

Zero Cross Opto-Triac, Vdrm 600V, Ift 10mA, DIP-6 #Relay #SolidState #commonpartslibrary

Zero Cross Opto-Triac, Vdrm 600V, Ift 15mA, DIP6 #Relay #SolidState #commonpartslibrary

UAA2016 Series 2kW 0.9mA Zero Voltage Switch Power Controller - SOIC-8 #commonpartslibrary #integratedcircuit #powermanagement #electricheating

dsPIC dsPIC™ 33CK, Functional Safety (FuSa) Microcontroller IC 16-Bit 100MHz 256KB (256K x 8) FLASH 48-UQFN (6x6) 28/36/48/64/80-Pin Digital Signal Controllers with High-Resolution PWM and CAN Flexible Data (CAN FD) Operating Conditions • 3.0V to 3.6V, -40°C to +125°C, DC to 100 MIPS • 3.0V to 3.6V, -40°C to +150°C, DC to 70 MIPS Core: 16-Bit dsPIC33CK CPU • 32-256 Kbytes of Program Flash with ECC and 8-24K RAM • Fast 6-Cycle Divide • LiveUpdate • Code Efficient (C and Assembly) Architecture • 40-Bit Wide Accumulators • Single-Cycle (MAC/MPY) with Dual Data Fetch • Single-Cycle, Mixed-Sign MUL Plus Hardware Divide • 32-Bit Multiply Support • Four Sets of Interrupt Context Saving Registers which Include Accumulator and STATUS for Fast Interrupt Handling • Zero Overhead Looping • RAM Memory Built-In Self-Test (MBIST) Clock Management • Internal Oscillator • Programmable PLLs and Oscillator Clock Sources • Reference Clock Output • Fail-Safe Clock Monitor (FSCM) • Fast Wake-up and Start-up • Backup Internal Oscillator Power Management • Low-Power Management Modes (Sleep, Idle, Doze) • Integrated Power-on Reset and Brown-out Reset High-Speed PWM • Eight PWM Pairs • Up to 250 ps PWM Resolution • Dead Time for Rising and Falling Edges • Dead-Time Compensation • Clock Chopping for High-Frequency Operation • PWM Support for: - DC/DC, AC/DC, inverters, PFC, lighting - BLDC, PMSM, ACIM, SRM motors • Fault and Current Limit Inputs • Flexible Trigger Configuration for ADC Triggering Timers/Output Compare/Input Capture • One General Purpose Timer • Peripheral Trigger Generator (PTG): - Up to 15 trigger sources to other peripheral modules - CPU independent state machine-based instruction sequencer • Nine MCCP/SCCP modules which Include Timer, Capture/Compare and PWM: - One MCCP - Eight SCCPs - 16 or 32-bit time base - 16 or 32-bit capture - 4-deep capture buffer • Fully Asynchronous Operation, Available in Sleep Modes #CommonPartsLibrary #IntegratedCircuit #Microcontroller #DSPIC33CK256MP

Zero Cross Opto-Triac, Vdrm 250V, Ift 15mA, DIP6

GANFET N-CH 200V 8.5A DIE The EPC2019 is an enhancement-mode N-channel Gallium Nitride (eGaN®) power transistor designed for high-speed and high-efficiency power conversion applications. With a 200 V drain-to-source voltage rating, 42 mΩ maximum RDS(on), and 8.5 A continuous drain current, it offers significantly lower switching losses than conventional silicon MOSFETs. Its ultra-low gate charge, zero reverse recovery charge (QRR), and fast switching characteristics make it ideal for high-frequency switching circuits. The device is supplied in a bare die (passivated die with solder bars) package for optimized thermal and electrical performance in compact, high-density designs. Key Features Enhancement-mode N-channel eGaN® FET 200 V drain-to-source voltage (VDS) 42 mΩ maximum RDS(on) @ VGS = 5 V 8.5 A continuous drain current Ultra-low gate charge (Qg ≈ 2.9 nC) Zero reverse recovery charge (QRR) for reduced switching losses Supports high-frequency switching operation Gate drive compatible with 0 V OFF / 5 V ON (no negative gate voltage required) Bare die package for compact, high-performance power designs Operating junction temperature: −40°C to +150°C #EPC2019 #eGaN #GaNFET #PowerTransistor #NChannelFET #HighEfficiency #HighSpeedSwitching #PowerElectronics #DCDCConverter #ClassDAudio #EfficientPowerConversion