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    Assets

    SI7850DP-thumb.png

    SI7850DP-thumb.png

    SI7850DP-thumbThumbnail
    svg

    SI7850DP Symbol.svg

    SI7850DP SymbolDefault
    SI7850DP-VB/SI7850DP-VB.3dshapes/PDFN-8_L5.6-W5.2-P1.27-LS6.1-BL.step

    SI7850DP-VB/SI7850DP-VB.3dshapes/PDFN-8_L5.6-W5.2-P1.27-LS6.1-BL.step

    SI7850DP-VB/SI7850DP-VB Model3D Model
    kicad_mod

    SI7850DP-VB/SI7850DP-VB.pretty/PDFN-8_L5.6-W5.2-P1.27-LS6.1-BL.kicad_mod

    SI7850DP-VB/SI7850DP-VB FootprintFootprint

    XRS30N20F

    XRS30N20F thumbnail
    200V 30A 3.4V 51W 82mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS
    N-channel power MOSFET designed for high-speed switching and power conversion applications. It features a 200 V drain-to-source voltage (VDS), 30 A continuous drain current (ID), 82 mΩ typical RDS(on) at VGS = 10 V, and is housed in a TO-252 (DPAK) package. The device also specifies a 6.5 nC typical total gate charge, 380 pF typical input capacitance, and supports a maximum junction temperature of 150°C.
    #NChannelMOSFET #PowerMOSFET #200V #30A #TO252 #DPAK #FastSwitching #PowerManagement #DiscreteSemiconductor #XNRUSEMI

    Properties

    XNRUSEMI

    Q

    lcsc.com/datasheet/C53454482.pdf

    XRS30N20F

    C53454482

    lcsc.com/product-detail/C53454482.html?s_z=n_q_XRS30N20F%2520&spm=wm.fly.bg.0.xh&lcsc_vid=RgIKU1NUFVVfVwJVRQRdVAZXTlJZAgEFE1hcAwAHT1IxVlNeQlVYVFRSRFdaXzsOAxUeFF5JWBYZEEoKFBINSQcJGk4eFQsCAgIaSgADAwAHC0slRVZZXlBRQk8GEwkK

    PDFN-8_L5.6-W5.2-P1.27-LS6.1-BL

    MOSFETs

    Extended Part

    creativecommons.org/licenses/by/4.0/

    parametric-v1

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