Part Datasheet Review and Analysis

Completed the review and cross-check against the official Renesas datasheet.
  • Official datasheet found: https://www.renesas.com/en/document/dst/tp65h070g4ps-datasheet?r=25565399
  • The existing project Datasheet URL is set to the Renesas product page, not the direct PDF; I recorded the direct datasheet URL in Implementation Details because the project metadata tool did not expose direct editing of the Datasheet URL field.
  • Symbol pin mapping matches the datasheet:
    • Pin 1 = Gate
    • Pin 2 = Source
    • Pin 3 = Drain
    • Tab = Source
  • Key mismatch: the project description currently says 41 A, TO-220AB, and 4-lead Kelvin source, but the datasheet says 29 A at TC = 25°C, TO-220, 3 leads, source tab.
  • Footprint mismatch: the footprint pads are effectively placeholder-sized/positioned, not a valid TO-220 land pattern. Pads are ~0.002 mm and spaced ~0.00254 mm, which is clearly incorrect for a through-hole TO-220.
Key datasheet specs: 650 V VDS, 800 V transient VDS, 72 mΩ typical / 85 mΩ max RDS(on), 29 A continuous drain current at 25°C, ±20 V VGS, 4 V typical threshold, 9 nC typical gate charge, -55°C to +150°C junction range.
Fix metadata and footprint
Fix identified issues
Rebuild TO-220 footprint
Add tab terminal
Run final review

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Documents

    Documents are markdown text files which describe project goals, capture details, or even simulation outputs.

    Assets

    TP65H070G4PS

    TP65H070G4PS

    TP65H070G4PS.stp3D Model

    TP65H070G4PS

    TO254P473X1016X1951-3P.kicad_modFootprint
    TP65H070G4PS-thumb.png

    TP65H070G4PS-thumb.png

    TP65H070G4PS-thumbThumbnail

    TP65H070G4PS.svg

    TP65H070G4PSDefault

    TP65H070G4PS

    TP65H070G4PS thumbnail
    N-Channel 650 V 29A (Tc) 96W (Tc) Through Hole TO-220AB
    650 V GaN FET for high-efficiency power switching applications. Rated for 650 V drain-to-source voltage (VDS) with 70 mΩ typical RDS(on), it supports 41 A continuous drain current (TC = 25°C). The device features a normally-off (enhancement-mode) GaN HEMT, ±20 V gate-source voltage rating, and is housed in a TO-220 package (4-lead, Kelvin source) for improved gate drive performance.

    Properties

    Datasheet URL: https://www.renesas.com/en/document/dst/tp65h070g4ps-datasheet?r=25565399

    TP65H070G4PS

    Renesas Electronics Corporation

    Transistors

    Q

    Reverse

    220-TO

    Pricing & Availability

    DPN

    Stock

    Qty 1

    1

    858

    $8.42

    Controls