Review all available part information (MPN, package, pin count, description, properties). If no datasheet URL is already set, search the web for the official datasheet and update the part's Datasheet property with the URL. Then cross-check the schematic symbol, footprint, and pin descriptions against the datasheet. Summarize key specs and flag any mismatches.
I’ll audit the part metadata, source the official Diodes Incorporated datasheet if needed, update the Datasheet property, then verify the symbol pins and TO-252 footprint against it.
Key specs: 40 V VDS, ±20 V VGS, 6 A continuous current on minimum copper, 50 A pulsed, 30 mΩ max at 10 V gate drive, 54 mΩ max at 4.5 V, −55°C to +150°C; status is NRND.
Symbol issues: Pin descriptions are missing, all pin types are Unspecified, and no rendered N-channel MOSFET body was detected.
Footprint issue: Pin pitch is correct, but pads differ from the manufacturer’s suggested land pattern—pads 1/3 are 1.06 × 2.60 mm instead of 1.5 × 2.5 mm, and drain pad 2 is 5.632 × 5.70 mm instead of 7.0 × 7.0 mm.
I filed an internal part-quality report covering the symbol and footprint discrepancies.
Wirelessly connects nets on schematic. Used to organize schematics and separate functional blocks. To wirelessly connect net portals, give them same designator. #portal
General Purpose Thick Film Standard Power
and High-Power Chip Resistor
47 kOhms ±5% 0.125W, 1/8W Chip Resistor 0805 (2012 Metric) Automotive AEC-Q200 Thick Film
Features:
- RMCF – standard power ratings
- RMCP – high power ratings
- Nickel barrier terminations standard
- Power derating from 100% at 70ºC to zero at +155ºC
- RoHS compliant, REACH compliant, and halogen free
- AEC-Q200 compliant
40 V N-Channel Enhancement-Mode Power MOSFET – N-channel enhancement-mode MOSFET optimized for DC-DC converters, power management circuits, LED backlighting, load switching, battery-powered equipment, and embedded power applications. Features a 40 V drain-to-source voltage (VDS), 6 A continuous drain current (TA), and 30 mΩ maximum RDS(on) at VGS = 10 V (54 mΩ at 4.5 V) for low conduction losses and efficient switching. Designed with low gate charge (18.6 nC typical), low input capacitance (945 pF typical), fast switching performance, and ±20 V gate-source voltage rating, making it suitable for high-efficiency switching regulators. Qualified to AEC-Q101 for automotive reliability, it operates over a −55°C to +150°C junction temperature range and is housed in a TO-252-3 (DPAK) surface-mount package. The part is Not Recommended for New Designs (NRND).