5V low-power CMOS SRAM memory, organized as 2K x 8 bits, with 90 ns access time, TTL-compatible inputs/outputs, asynchronous static operation, standby low-power mode, and battery backup support. DIP-24 package.

Keywords / Hashtags: 6116LA90DB, 6116LA-90DB, 6116 SRAM, 2Kx8 SRAM, 16Kbit SRAM, STK 6116 / 6116 SRAM DIP-24, CMOS SRAM, low power SRAM, 5V SRAM, asynchronous SRAM, DIP-24 SRAM, Renesas SRAM, #6116LA90DB #6116SRAM #CMOSSRAM #2Kx8SRAM #16KbitSRAM #LowPowerSRAM #5VSRAM #DIP24 #RenesasThe 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1uW to 4uW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.