Apple II Bus - 50 Pin card edge connector

Voltage Level Translator Bidirectional 1 Circuit 8 Channel 60Mbps 20-TSSOP This device is an 8-bit non-inverting level translator which uses two separate configurable power-supply rails. The A port tracks the VCCA pin supply voltage. The VCCA pin accepts any supply voltage between 1.4V and 3.6V. The B port tracks the VCCB pin supply voltage. The VCCB pin accepts any supply voltage between 1.65V and 5.5V. Two input supply pins allows for low Voltage bidirectional translation between any of the 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. When the output-enable (OE) input is low, all outputs are placed in the high-impedance (Hi-Z) state. To put the device in the Hi-Z state during power-up or power-down periods, tie OE to GND through a pulldown resistor. The current-sourcing capability of the driver determines the minimum value of the resistor. • No direction-control signal needed • Maximum data rates: – 110Mbps (push pull) – 1.2Mbps (open drain) • 1.4V to 3.6V on A port and 1.65V to 5.5V on B port (VCCA ≤ VCCB) • No power-supply sequencing required – either VCCA or VCCB can be ramped first • Latch-up performance exceeds 100mA per JESD 78, class II • ESD protection exceeds JESD 22 (A port): – 2000 V Human Body Model (A114-B) – 150 V Machine Model (A115-A) – 1000 V Charged-Device Model (C101) • IEC 61000-4-2 ESD (B-port): – ± 8kV Contact Discharge – ± 6kV Air Discharge #commonpartslibrary #integratedcircuit #logic #translator #levelshifter

Connector Header Through Hole 4 position 0.100" (2.54mm) #CommonPartsLibrary #Connector #Header #male-pin #AMPMODU Mod II

2 Circuit IC Switch 2:1 10Ohm 10-UQFN (2.0x1.5) The TS5A23157 device is a dual single-pole doublethrow (SPDT) analog switch designed to operate from 1.65 V to 5.5 V. This device can handle both digital and analog signals. Signals up to 5.5 V (peak) can be transmitted in either direction. Features 1• Low ON-State Resistance (15 Ω at 125℃) • 125℃ Operation • Control Inputs are 5-V Tolerant • Specified Break-Before-Make Switching • Low Charge Injection • Excellent ON-Resistance Matching • Low Total Harmonic Distortion • 1.8-V to 5.5-V Single-Supply Operation • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 2000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) 2 Applications • Sample-and-Hold Circuits • Battery-Powered Equipment • Audio and Video Signal Routing • Communication Circuits #commonpartslibrary #integratedcircuit #circuitswitch #TexasInstruments #AnalogSwitch #SPDT #SignalRouting #Multiplexer #LowOnResistance #HighSpeedSwitching #UQFN #EmbeddedSystems #ElectronicsDesign

SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 44-TSOP II #commonpartslibrary #integratedcircuit #memory

SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 54-TSOP II #CommonPartsLibrary #IntegratedCircuit #Memory #W9825G6

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 54-TSOP II The AS4C32M16SB-7TCN is a single-data-rate synchronous dynamic random-access memory (SDR SDRAM) device manufactured by Alliance Memory. It is organized internally as a multi-bank array, allowing concurrent access operations across banks to improve effective memory bandwidth compared to simpler asynchronous DRAM architectures. The device is intended for general-purpose embedded memory applications where a synchronous, clock-driven memory interface is required, including embedded systems, industrial controllers, consumer electronics, networking equipment, and other designs that rely on a parallel SDRAM interface for working memory or buffering. As a drop-in style component within Alliance Memory's broader memory portfolio, this part is designed to be pin- and function-compatible with legacy SDR SDRAM devices originally offered by other manufacturers, allowing designers to source a continued-availability alternative for designs that depend on this memory architecture even as some original suppliers have discontinued production. This makes the device particularly useful in long-lifecycle industrial, embedded, and legacy system designs where a guaranteed supply of a specific memory interface and timing profile is critical to sustaining production over many years. The "B" designation in the part family indicates a specific die revision within the AS4C32M16S product line, reflecting a particular generation of internal silicon design while maintaining functional and pinout compatibility with related die revisions in the same footprint. The device communicates over a standard synchronous SDRAM command interface, using a clock-synchronized protocol for row and column addressing, data burst transfers, and bank management, and it supports the auto-refresh and self-refresh mechanisms typical of SDRAM devices to maintain stored data integrity without requiring constant external refresh management by the host controller. Mechanically, the device is housed in a thin small-outline package suited to space-constrained PCB layouts, and it is built for standard surface-mount assembly processes. The "-7TCN" suffix on this part number reflects a specific speed grade, package style, and temperature grade combination within the product family, with this particular variant intended for commercial temperature range operation. The device is supplied in tray packaging for surface-mount assembly and is compliant with RoHS material restrictions, supporting standard environmental and regulatory requirements for electronic components. Spec Sheet Identification Part Number: AS4C32M16SB-7TCN Device Family: AS4C32M16SB Manufacturer: Alliance Memory, Inc. Die Revision: B-die Functional Classification Device Type: Synchronous DRAM (SDR SDRAM) Memory Organization: Multi-bank array architecture Interface Type: Parallel, clock-synchronous command interface Refresh Capability: Supports auto-refresh and self-refresh modes Electrical Characteristics Supply Voltage: Standard 3.3V-class SDRAM supply rating Clock Frequency: Mid-range SDR SDRAM clock speed class Access Timing: Standard SDR SDRAM access time class for its speed grade Environmental & Qualification Temperature Grade: Commercial ("C" suffix designation) RoHS Compliance: Yes Product Positioning: Long-lifecycle, drop-in replacement memory device Package Package Type: Thin Small Outline Package, TSOP-II style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tray packaging #AS4C32M16SB #AllianceMemory #SDRAM #SDRSDRAM #MemoryIC #EmbeddedMemory #TSOP #SurfaceMount #LegacyMemory #DropInReplacement #DRAM #EmbeddedSystems #IndustrialElectronics #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #MemoryComponent #PCBDesign #CommonPartsLibrary #IntegratedCircuit #Memory #AS4C32

SRAM - Asynchronous Memory IC 8Mbit Parallel 55 ns 44-TSOP II #commonpartslibrary #integratedcircuit #memory #sram

Connector Header Through Hole 20 position 0.100" (2.54mm) #CommonPartsLibrary #Connector #Header #male-pins #BERGSTIK® II

50 Position Receptacle Connector 0.100" (2.54mm) Through Hole Gold #CommonPartsLibrary #Connector #Header #AMPMODU Mod II #534206

SDRAM Memory IC 256Mbit Parallel 166 MHz 5 ns 54-TSOP II #CommonPartsLibrary #IntegratedCircuit #Memory #W9825G6

Pin header 2x20 straight gold Mod II | TE Connectivity 2-826656-0 02x20 2.54mm

SMD Comm X5R, Ceramic, 0.1 uF, 10%, 6.3 VDC, 15.75 VDC, 85C, -55C, X5R, SMD, MLCC, Temperature Stable, Class II, 5 % , 5 GOhms, 6.5 mg, 0603, 1.6mm, 0.8mm, 0.8mm, 0.7mm, 0.35mm, 4000, 78 Weeks, 70 0.87

25 MHz TCXO HCMOS Oscillator 3.3V Enable/Disable 4-SMD, No Lead ASTX-H12 25.000 MHz Abracon ASTX-H12 HCMOS output SMD TCXO, 2.5 x 2.0 x 0.9mm package, 3.2MHz to 55MHz frequency range, standard frequencies 5MHz to 44MHz, 3.3V typical supply voltage, frequency stability up to ±2.5ppm over temperature, ±2.0ppm tolerance at 25°C, low current consumption, 15pF load, 5ns max rise/fall time, tri-state standby function, MSL-1, RoHS/RoHS II compliant, suitable for cellular phones, wireless modules, GPS, RF communication and precision clock reference applications. Search Keywords: ASTX-H12, Abracon ASTX-H12, ASTX-H12 TCXO, HCMOS TCXO, SMD TCXO 2.5x2.0mm, 3.3V TCXO, 26MHz TCXO, 40MHz TCXO, 3.2MHz to 55MHz TCXO, low power TCXO, precision clock oscillator, RF reference oscillator, GPS TCXO, wireless module TCXO, ASTX-H12 datasheet Hashtags: #ASTXH12 #AbraconASTXH12 #TCXO #HCMOSTCXO #SMDOscillator #CrystalOscillator #TemperatureCompensatedOscillator #33VTCXO #25x20mmOscillator #PrecisionClock #FrequencyReference #RFOscillator #GPSOscillator #WirelessClock