A Dual P-Channel Enhanced MOSFET. Used as a high-current row power switch and multiplexing driver for LED matrix displays. (8-pin Package)

IRFS7530 Power MOSFET 60V - 240A

IRFS7530 Power MOSFET 60V - 240A

A type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers.

A type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers

A type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers.

A type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers #CommonPartsLibrary #Mosfet #N-Channel #Tsot-23-3 #SMD

A type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers #CommonPartsLibrary #Mosfet #P-Channel #Tsot-23-3

A type of MOSFET in which the channel of the MOSFET is composed of a majority of holes as current carriers

A type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers.

A mosfet layout with multiple footprints to allow for a more universally usable PCB

N-Channel Ehancement Mode Reverse Protected Power MOSFET Symbol

Dual N MosFet in Half bridge configuration.

P-Channel 30 V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3 #P-Channel #pnp #MOSFET #part

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

N-Channel 55V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET #Mosfet #IRLZ44 #HEXFET

30V 4.2A 65mΩ@10V,3A 1W 1.5V@250uA P Channel SOT-23 MOSFETs ROHS #CommonPartsLibrary #Transistor #P-channel #Mosfet

N-Channel 50 V 220mA (Ta) 360mW (Ta) Surface Mount SOT-23-3 #CommonPartsLibrary #Transistor #N-channel #Mosfet

N-Channel 55 V 49A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK #mosfet #n-channel #power

Buck Switching Regulator IC Positive Fixed 3.3V 1 Output 2A SOT-23-6 Thin, TSOT-23-6 The AP63200/AP63201/AP63203/AP63205 is a 2A, synchronous buck converter with a wide input voltage range of 3.8V to 32V and fully integrates a 125mΩ high-side power MOSFET and a 68mΩ low-side power MOSFET to provide high-efficiency step-down DC/DC conversion. The AP63200/AP63201/AP63203/AP63205 device is easily used by minimizing the external component count due to its adoption of peak current mode control along with its integrated compensation network. The AP63200/AP63201/AP63203/AP63205 has optimized designs for Electromagnetic Interference (EMI) reduction. The converter features Frequency Spread Spectrum (FSS) with a switching frequency jitter of ±6%, which reduces EMI by not allowing emitted energy to stay in any one frequency for a significant period of time. It also has a proprietary gate driver scheme to resist switching node ringing without sacrificing MOSFET turn-on and turn-off times, which further erases highfrequency radiated EMI noise caused by MOSFET switching. The device is available in a low-profile, TSOT26 package. • VIN 3.8V to 32V • 2A Continuous Output Current • 0.8V ±1% Reference Voltage • 22µA Ultralow Quiescent Current • Switching Frequency o 500kHz: AP63200 and AP63201 o 1.1MHz: AP63203 and AP63205 • Pulse Width Modulation (PWM) Regardless of Output Load o AP63201 • Supports Pulse Frequency Modulation (PFM) o AP63200, AP63203, and AP63205 o Up to 80% Efficiency at 1mA Light Load o Up to 88% Efficiency at 5mA Light Load • Fixed Output Voltage o 3.3V: AP63203 o 5.0V: AP63205 • Proprietary Gate Driver Design for Best EMI Reduction • Frequency Spread Spectrum (FSS) to Reduce EMI • Precision Enable Threshold to Adjust UVLO • Protection Circuitry o Overvoltage Protection o Cycle-by-Cycle Peak Current Limit o Thermal Shutdown • 12V and 24V distributed power bus supplies • Flat screen TV sets and monitors • Power tools and laser printers • White goods and small home appliances • FPGA, DSP, and ASIC supplies • Home audios • Network systems • Set top boxes • Gaming consoles • Consumer electronics #commonpartslibrary #integratedcircuit #AP63203WU7 #BuckConverter #DCDCConverter #PowerManagement #VoltageRegulator #SynchronousBuck #EmbeddedSystems #IndustrialElectronics #PowerSupply #DiodesInc #3V3Power #ElectronicsDesign

N-Channel 100 V 33A (Tc) 130W (Tc) Surface Mount D2PAK MOSFET N-CH 100V 33A D2PAK

OR Controller N+1 ORing Controller N-Channel 1:1 TSOT-23-8 The LM74700QDDFRQ1 is an automotive-qualified ideal diode controller designed to provide reverse polarity protection, reverse current blocking, and input power path management in low-voltage DC power systems. The device controls an external N-channel MOSFET to emulate an ideal diode with very low forward voltage drop and reduced power dissipation compared to conventional Schottky diodes. It is optimized for automotive and industrial applications requiring robust protection against negative supply voltages, load dump conditions, and reverse battery events. The controller supports wide input voltage operation and integrates fast response circuitry for fault handling and transient protection. The device is suitable for power OR-ing, hot-swap, redundant power supply systems, and battery-connected applications where efficiency, reliability, and thermal performance are critical. Engineering Specification Device Type Automotive ideal diode controller with reverse battery and reverse current protection Qualification Standard AEC-Q100 qualified for automotive applications Control Topology External N-channel MOSFET controller for ideal diode operation Input Voltage Range Supports wide automotive and industrial supply voltage ranges Reverse Polarity Protection Provides protection against negative input voltage conditions and reverse battery connection Reverse Current Blocking Actively prevents reverse current flow during output-to-input fault conditions Forward Voltage Drop Low conduction losses through external MOSFET control for high-efficiency power delivery Transient Protection Capable of handling automotive transient events including load dump conditions Gate Drive Control Integrated gate driver optimized for fast MOSFET switching and protection response Power Path Management Supports power OR-ing and redundant supply architectures Fault Response Fast turn-off during reverse current and fault events Current Consumption Low operating quiescent current suitable for always-on systems Thermal Performance Designed for efficient thermal operation with external MOSFET-based power dissipation Operating Temperature Range Automotive-grade extended temperature operation Package Type Small-outline automotive package suitable for compact PCB layouts #commonpartsLibrary #integratedcircuit #powermanagement #orcontroller

25A Id, 30V Vds, NexFET N-Channel Power MOSFET, 6.9mOhm Ron, Qg (typ) 7.9nC, SON8 5x6mm NexFET Power MOSFET N-MOS TDSON*

N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification

N-Channel 30 V 5A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23 #CommonPartsLibrary #Transistor #FET #Mosfet #IRLML6344