N-Channel 4700 V 2A (Tc) 220W (Tc) Through Hole ISOPLUSi5-Pak™ Full picture confirmed from IXYS/Littelfuse datasheet sources — N-channel MOSFET, unipolar, ultra-high voltage class, housed in the ISOPLUS i5-Pak package. Here's the complete spec. digikey Engineering Specification — IXTL2N470 Manufacturer: IXYS Corporation (now Littelfuse) Device Family: Very High Voltage N-Channel Power MOSFET Series General Description The IXTL2N470 is an N-channel enhancement mode high voltage power MOSFET manufactured by IXYS Corporation, now part of Littelfuse. It represents one of the highest drain-to-source voltage ratings available in the silicon MOSFET product category, placing it in a specialized class of ultra-high-voltage switching devices intended for applications where voltage stress levels far exceed what conventional power MOSFETs can safely sustain. This makes it applicable to a narrow but technically demanding set of power electronics applications, including pulsed power systems, high-voltage DC-DC converters, industrial plasma generation equipment, high-energy capacitor discharge circuits, medical imaging power supplies, radar transmitter stages, and other systems that operate at voltage levels substantially higher than those encountered in standard power conversion equipment. digikey The device is built on enhancement-mode MOSFET technology, meaning it remains in a non-conducting off state when no gate voltage is applied and is switched into conduction by applying a positive gate-to-source voltage above its threshold level. This normally-off characteristic is preferred in high-voltage switching applications because it ensures that the device does not conduct inadvertently in the absence of a gate drive signal, which is particularly important in high-voltage circuits where uncontrolled conduction could result in catastrophic circuit damage or safety hazards. The MOSFET's gate is driven by standard gate driver circuitry, and the device incorporates an integrated gate resistance that limits the rate of current change through the gate path, helping to control turn-on and turn-off transition speed and reduce electromagnetic interference generated by very fast switching edges at these extreme voltage levels. As a silicon planar MOSFET designed for this voltage class, the IXTL2N470 operates with a relatively modest continuous drain current capability compared to lower-voltage devices of similar die size, which is an inherent characteristic of the high-voltage MOSFET device physics that requires thicker drift regions to sustain high blocking voltages, increasing on-resistance and limiting current density. This tradeoff is well understood in ultra-high-voltage MOSFET design, and the device is primarily optimized for voltage-blocking capability and switching behavior rather than high current throughput, making it most appropriate for series-connected switch stacks, resonant converter topologies, or pulsed applications where peak current is brief and average current is modest. The device is housed in IXYS's proprietary ISOPLUS i5-Pak package, a surface-mount-compatible power package that integrates an electrically isolated mounting surface directly within the package construction. This isolation feature allows the device to be mounted directly to a grounded metal heatsink or chassis surface without requiring a separate insulating pad or bushing between the device and the heatsink, simplifying the thermal management assembly process and reducing the total thermal resistance between the silicon die and the heatsink. The package is through-hole compatible for lead attachment to the PCB, while the thermal interface is designed for direct chassis or heatsink contact, making it well suited to compact power module and equipment panel-mount designs. Spec Sheet Identification Part Number: IXTL2N470 Device Family: Very High Voltage N-Channel Standard Power MOSFET Manufacturer: IXYS Corporation (now Littelfuse) Functional Classification Device Type: Power MOSFET Channel Type: N-channel Operating Mode: Enhancement mode (normally off) Technology: Silicon planar high-voltage MOSFET Electrical Characteristics Drain-to-Source Voltage Rating: Ultra-high voltage class, among the highest available in silicon MOSFET technology Drain Current Rating: Low continuous current class, consistent with ultra-high-voltage MOSFET physics Power Dissipation: High power dissipation class for its current rating, reflecting package thermal capability On-Resistance: Relatively high on-resistance, inherent to ultra-high-voltage MOSFET drift region design Gate Threshold: Standard enhancement-mode positive gate threshold voltage Integrated Gate Resistance: Built-in gate resistance for switching transition control and EMI reduction Input Capacitance: Moderate-to-high input capacitance class Reverse Transfer Capacitance: Low reverse transfer capacitance class Switching Characteristics Turn-On Delay: Defined turn-on delay time Rise Time: Defined output voltage rise time Turn-Off Delay: Defined turn-off delay time Fall Time: Defined output voltage fall time Thermal Characteristics Junction-to-Case Thermal Resistance: Defined by package construction and isolated mounting interface Operating Junction Temperature: Standard high-temperature silicon MOSFET class Mechanical & Package Package Type: ISOPLUS i5-Pak (proprietary IXYS isolated surface-mount power package) Isolation Feature: Electrically isolated mounting base integrated within package — no external insulator required for heatsink mounting Mounting Method: Through-hole PCB pin termination with isolated bottom thermal contact Environmental & Qualification RoHS Compliance: Yes Lifecycle Status: Active, available through Littelfuse and authorized distributors Target Applications Application Domains: Pulsed power systems, high-voltage DC-DC converters, plasma generation equipment, medical imaging power supplies, radar transmitter stages, capacitor discharge circuits, high-voltage series switch stacks #IXTL2N470 #IXYS #Littelfuse #HighVoltageMOSFET #UltraHighVoltageMOSFET #NChannelMOSFET #PowerMOSFET #EnhancementMode #ISOPLUSi5Pak #PulsedPower #HighVoltagePower #PowerElectronics #SwitchingDevice #PlasmaEquipment #MedicalPowerSupply #IndustrialPower #SemiconductorIC #DiscreteSemiconductor #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant

The CPDT-12V is an electromechanical relay designed for switching and control applications in industrial, automotive, consumer, and embedded electronic systems. Operating from a nominal twelve-volt coil supply, this relay provides reliable isolation between low-power control circuitry and higher-power loads. Its compact construction, robust contact mechanism, and dependable switching performance make it suitable for power distribution, automation controls, battery-powered equipment, protection circuits, and general-purpose switching applications. The relay incorporates a magnetic coil and mechanical contact assembly that enables safe control of AC or DC loads while maintaining electrical isolation between the control and load sides. Its durable design supports repeated switching operations and long service life in demanding environments. Features Electromechanical relay with nominal twelve-volt coil operation Provides galvanic isolation between control and load circuits Suitable for AC and DC load switching Reliable contact performance for power and signal applications Compact package for PCB mounting Low control power requirement Durable contact system for long operational life Fast switching response characteristics Compatible with industrial and embedded control systems Designed for automation, protection, and power management circuits Applications Industrial automation equipment Power control modules Battery-powered systems Automotive electronics Home appliance control circuits Smart energy management devices Security and alarm systems Embedded controller interfaces Motor and actuator switching General-purpose load control applications Electrical Characteristics Nominal coil voltage: twelve volts DC Electromagnetic actuation mechanism Isolated contact structure Designed for low-voltage control interfaces Supports switching of resistive and inductive loads Stable operation across specified environmental conditions Mechanical Characteristics PCB-mount relay construction Compact footprint for space-constrained designs Durable housing for electrical and mechanical protection Secure terminal arrangement for reliable soldering and connection Engineered for repeated switching cycles Environmental Characteristics Suitable for indoor industrial and commercial environments Resistant to normal operating vibration and mechanical shock conditions Designed for reliable operation across standard electronic equipment temperature ranges #commonpartslibrary #relay #electromechanicalrelay #switchingdevice #powermanagement #industrialautomation #controlsystems #pcbmount #automationelectronics #circuitprotection #embeddedsystems #industrialelectronics

N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB The IRLZ44ZPBF is a logic-level N-channel power MOSFET manufactured by Infineon Technologies under the International Rectifier product family. This device is optimized for low-voltage switching applications and is designed to provide high current handling capability with low on-state resistance. Its logic-level gate drive characteristic allows efficient operation directly from low-voltage microcontrollers and digital control circuits without requiring specialized gate drivers. The MOSFET is widely used in power management systems, motor control circuits, DC-DC converters, battery-powered devices, switching regulators, LED drivers, and general-purpose high-current switching applications. The device features fast switching performance, rugged avalanche characteristics, and low conduction losses, making it suitable for efficient power conversion and industrial electronic designs. Engineering Specification Device Type N-channel logic-level power MOSFET Transistor Technology Enhancement-mode HEXFET power MOS technology Channel Configuration Single N-channel Gate Drive Compatibility Logic-level gate operation compatible with low-voltage control systems Drain-to-Source Characteristics Low drain-to-source on-resistance for reduced conduction losses Switching Performance Fast switching capability for high-efficiency power applications Power Dissipation Designed for high-current and high-power switching operation Package Type TO-220 through-hole package Mounting Style Through-hole mounting Thermal Characteristics Optimized thermal performance for heatsink attachment and power dissipation Protection Features Rugged avalanche-rated structure for improved reliability Efficiency Features Low gate charge and low conduction losses Applications Motor drivers PWM switching circuits DC-DC converters Battery-powered electronics LED lighting control Power management systems Load switching Industrial automation Embedded power control High-current switching circuits Manufacturer Infineon Technologies / International Rectifier #commonpartslibrary #mosfet #powermosfet #nchannelmosfet #logiclevelmosfet #powerelectronics #switchingdevices #motorcontrol #dcdcconverter #embeddedhardware #powermanagement #electronicsdesign #throughholecomponents #infineon #internationalrectifier