N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH 30 V N-channel TrenchFET® Gen V MOSFET that combines very low on-resistance (RDS(on)), high current capability, and a thermally efficient compact package. It is optimized for applications where high efficiency, low power loss, and small PCB footprint are critical. This device is built using advanced trench MOSFET technology, enabling low conduction and switching losses, which improves overall system efficiency in power electronics designs. N-channel MOSFET (enhancement mode) Low RDS(on): ~1.2 mΩ @ 10 V → minimizes conduction losses High current capability: 47.1 A (ambient) up to 162 A (case) 30 V drain-source voltage (VDS) Low gate charge (Qg) → fast switching performance Wide operating temperature: −55 °C to +150 °C Compact PowerPAK® 1212-8 package for high power density #CommonPartsLibrary #Transistor #FET #Mosfet #SISS52

N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH N-Channel 30 V (D-S) MOSFET