N-Channel Power MOSFET – 30 V N-channel enhancement-mode MOSFET optimized for load switching, DC-DC converters, battery-powered devices, power management, motor control, and embedded switching applications. Features a 30 V drain-to-source voltage (VDS), 2 A continuous drain current, and 165 mΩ maximum RDS(on) at VGS = 4.5 V, with 1.8 V logic-level gate drive compatibility for low-voltage microcontroller interfaces. Offers 1.7 nC typical gate charge, 130 pF typical input capacitance, ultra-fast switching performance, and an integrated body diode for efficient power conversion. Rated for ±12 V gate-to-source voltage, 800 mW power dissipation, 150°C maximum junction temperature, and housed in a 3-pin MCPH3 (SC-70 / SOT-323) surface-mount package. This device is obsolete / not recommended for new designs. #onsemi #MCH3478TLH #MCH3478 #NChannelMOSFET #LogicLevelMOSFET #PowerMOSFET #LoadSwitch #DCDCConverter #PowerManagement #MotorDriver #SOT323 #EmbeddedSystems

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