Equal to an AND gate followed by a NOT gate. The outputs of all NAND gates are high if any of the inputs are low.

A digital logic gate that gives an output of 0 when any of its inputs are 1, otherwise 1.

An electronic circuit that gives a high output only if all its inputs are high.

An electronic circuit that gives a high output if one or more of its inputs are high.

An electronic circuit that produces an inverted version of the input at its output.

N-Channel 30 V 5.7A (Ta) 1.4W (Ta) Surface Mount SOT-23-3 The AO3400A N-Channel MOSFET is a 30V N-channel enhancement-mode MOSFET designed using trench MOSFET technology. It is widely used for load switching, DC-DC converters, motor driving, and PWM control applications due to its very low on-resistance and compact SOT-23 package. It is especially popular in small electronics and embedded systems because it can be driven directly by 3.3V or 5V logic signals, making it ideal for microcontroller-based designs. Key Features Drain-Source Voltage (VDS): 30V Continuous Drain Current (ID): up to 5.7A (at 25°C) Ultra-low RDS(on): ~26.5 mΩ @ VGS = 10V ~32 mΩ @ VGS = 4.5V ~48 mΩ @ VGS = 2.5V Logic-level gate drive (works well with MCU GPIOs) Fast switching performance (ns-range switching times) Low gate charge (~6–7 nC) → efficient switching Compact SOT-23 package for space-saving PCB design Low power dissipation (~1.4W typical at 25°C ambient) Operating temperature: −55°C to +150°C Typical Applications Load switching (LEDs, sensors, small motors) Power management in battery-powered devices DC-DC converters PWM control circuits Fan and heater control in embedded systems #AO3400A #MOSFET #NChannelMOSFET #PowerElectronics #SOT23 #LoadSwitch #EmbeddedSystems #ElectronicsComponents #TrenchMOSFET #Commonpartslibrary #Transistor #FET

USB Controller USB 2.0 I2C Interface 24-QFN (4x4) The STUSB4500QTR is a standalone USB Type-C Power Delivery (PD) controller from STMicroelectronics designed for power sink applications (devices that receive power, like chargers, IoT devices, or battery-powered systems). It enables automatic negotiation of USB Power Delivery contracts (up to 100 W: 20 V / 5 A) without requiring an external microcontroller, thanks to its built-in auto-run algorithm. Power profiles (PDOs) can be pre-configured and stored in internal non-volatile memory, simplifying system design and reducing component count. The device is optimized for modern USB-C designs, offering robust protection, high-voltage tolerance, and support for operation even from a dead battery state. Key Features Power Delivery & Control Standalone USB Type-C™ and USB PD sink controller Supports up to 100 W (20 V, 5 A) power negotiation Auto-run mode (no MCU required) for PD negotiation Up to 3 configurable sink PDO profiles stored in NVM Power Management Dead battery mode support (can start with no battery power) Dual power supply inputs: V_SYS: 3.0 V – 5.5 V V_DD: 4.1 V – 22 V Integrated VBUS monitoring and control Integrated Functions Built-in VBUS switch gate drivers (PMOS) Internal/external VBUS discharge paths I²C interface for configuration and monitoring Protection & Reliability Short-to-VBUS protection on CC pins (up to 22 V) High-voltage tolerance: Up to 28 V on VBUS pins ESD protection: 3 kV HBM / 1.5 kV CDM Physical & Environmental Package: QFN-24 (4×4 mm) Operating temperature: –40°C to +105°C Industrial-grade reliability Compliance & Compatibility Certified for: USB Type-C Rev 1.2 USB PD Rev 2.0 Interoperable with USB PD 3.0 #commonpartslibrary #integratedcircuit #usbcontroller

N-Channel 100 V 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-7 BSC040N10NS5ATMA1 is a high-performance 100V N-Channel Power MOSFET from Infineon's OptiMOS™ 5 family. It is designed for high-efficiency switching applications such as switched-mode power supplies (SMPS), synchronous rectification, DC-DC converters, motor drives, battery-powered systems, and industrial power management. The device features extremely low on-resistance, high current capability, and excellent thermal performance, making it suitable for demanding power conversion applications. Key Features N-Channel Enhancement Mode MOSFET 100V Drain-to-Source Voltage (VDS) Ultra-low RDS(on): 4.0 mΩ max @ VGS = 10V Continuous Drain Current up to 100A (package limited) Optimized for high-performance SMPS and synchronous rectification Low gate charge for improved switching efficiency 100% avalanche tested for enhanced robustness Superior thermal resistance and power dissipation Wide operating junction temperature range: -55°C to +150°C RoHS compliant and halogen-free Compact PG-TDSON-8 / SuperSO8 package for high power density designs Typical Applications DC-DC Converters Synchronous Rectifiers Motor Control Battery Management Systems (BMS) Telecom and Industrial Power Supplies Solar Power Systems High-Current Switching Circuits #Infineon #OptiMOS5 #MOSFET #NChannelMOSFET #PowerMOSFET #100V #LowRDSon #SMPS #DCDCConverter #MotorDrive #PowerElectronics #IndustrialElectronics #BSC040N10NS5ATMA1 #HighEfficiency #SynchronousRectification