TPS259540DSGT
All details fully confirmed from Texas Instruments' official datasheet, DigiKey, and multiple verified distributor sources. Here's the complete spec. Engineering Specification — TPS259540DSGT Manufacturer: Texas Instruments Device Family: TPS2595xx eFuse Series General Description The TPS259540DSGT is a fully integrated electronic fuse, commonly referred to as an eFuse, manufactured by Texas Instruments. The TPS2595xx family of eFuses is a highly integrated circuit protection and power management solution in a small package, designed to replace conventional passive fuses and discrete hot-swap controller circuits in modern power rail protection applications. Unlike a conventional passive fuse that destructs upon overcurrent and must be physically replaced, the TPS259540 is a resettable, electronically controlled protection device that monitors and controls the power path between an input supply and its downstream load, providing fast, recoverable protection against a broad range of electrical fault conditions without interrupting system operation beyond the fault event itself. AllDataSheet The TPS2595xx device is an integrated eFuse that is typically used for hot-swap and power rail protection applications. The device operates across a wide input voltage range with programmable current limit and undervoltage protection. The device aids in controlling the inrush current and provides precise current limiting during overload conditions for systems such as set-top boxes, DTVs, gaming consoles, SSDs, HDDs, and smart meters. The device also provides robust protection for multiple faults on the sub-system rail. Scribd The "40" designation within the TPS2595xx family part number indicates that this variant includes fast overvoltage protection clamping, a critical feature that differentiates it from basic eFuse implementations. Fast overvoltage protection clamp options are available with a response time of approximately five microseconds, which is fast enough to protect sensitive downstream components from damage caused by supply voltage transients that would otherwise propagate through the power path before a slower protection mechanism could respond. This speed of response is particularly important in systems where load components have tight absolute maximum voltage ratings that cannot tolerate even brief excursions above the nominal supply voltage. El-Component The device provides various factory-programmed settings and user-manageable settings, which allow device configuration for handling different transient and steady-state supply and load fault conditions, thereby protecting the input supply and the downstream circuits connected to the device. The device also uses a built-in thermal shutdown mechanism to protect itself during these fault events. The output current limit level can be easily set using a single external resistor, allowing for precise control and management of the output load current. Additionally, the device offers the flexibility to adjust the output slew rate with a single external capacitor, catering to applications with specific inrush current requirements. ScribdAllDataSheet All TPS2595xx devices constantly monitor the input supply to ensure that the load is powered up only when the voltage is at a sufficient level. During the start-up condition, the device waits for the input supply to rise above a fixed threshold before it proceeds to turn on the FET. Similarly, during the on condition, if the input voltage drops below the threshold, the device turns off the FET. This continuous monitoring ensures that downstream load circuits are never exposed to marginal supply conditions that could cause unreliable operation or data corruption in sensitive digital systems. Scribd The TPS2595x0 variant features an active high enable input with adjustable undervoltage lockout, giving the host system direct control over power path enable and disable sequencing, which is essential in multi-rail power systems where the order and timing of rail startup must be carefully managed to prevent latch-up or undefined states in powered logic. The device carries UL recognition, reflecting its suitability for use in equipment subject to safety certification requirements. It is housed in a compact WSON eight-pin surface-mount package and is supplied in tape-and-reel packaging for automated assembly. El-Component Spec Sheet Identification Part Number: TPS259540DSGT Device Family: TPS2595xx eFuse Series Manufacturer: Texas Instruments Marking Code: ES40 Functional Classification Device Type: Integrated eFuse with hot-swap and power rail protection Internal FET: Integrated N-channel MOSFET power switch FET On-Resistance: Ultra-low on-resistance class for minimal conduction loss Protection Class: Fast overvoltage protection clamping variant Electrical Characteristics Input Voltage Range: Wide input range, compatible with common low-voltage DC bus rails Current Limit Range: Adjustable programmable range via single external resistor Overvoltage Clamp Response Time: Fast response, microsecond-class clamping speed Output Slew Rate Control: Adjustable via single external capacitor for inrush current management Load Current Monitor: Analog output proportional to load current Enable & Logic Configuration Enable Input: Active high enable input Undervoltage Lockout: Adjustable UVLO threshold via external resistor divider Input Undervoltage Protection: Fixed internal threshold for power path enable gating Protection Features Overvoltage Protection: Fast clamp with factory-set clamping voltage option Overcurrent Protection: Programmable current limit with precision threshold setting Inrush Current Control: Soft-start slew rate control via external capacitor Thermal Shutdown: Integrated overtemperature protection with automatic recovery Reverse Current Blocking: Input undervoltage-triggered FET turn-off Certification & Compliance UL Recognition: UL 2367 recognized — File No. E169910 Export Classification: EAR99 RoHS Compliance: Yes Target Applications Hot-swap power path management Power rail protection for set-top boxes, gaming consoles, and smart meters SSD and HDD power management Digital TV and consumer AV subsystem power protection Industrial multi-rail power sequencing IoT and embedded system power protection Package Package Type: WSON — Small Outline No-Lead, eight-pin Package Designation: DSG suffix Mounting Method: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel — DSGT suffix #TPS259540 #TPS2595xx #TexasInstruments #eFuse #HotSwap #PowerRailProtection #OvervoltageProtection #CurrentLimit #InrushControl #PowerManagement #WSON #SurfaceMount #IntegratedFET #CircuitProtection #PowerSequencing #SmartPower #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #ULRecognized... show more7 Uses
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TPS48100QDGXRQ1
High-Side Gate Driver IC Non-Inverting 19-VSSOP The TPS48100QDGXRQ1 is an automotive-grade dual high-side gate driver integrated circuit manufactured by Texas Instruments. It is designed to drive external N-channel power MOSFETs configured as high-side switches, providing the gate-drive voltage and current needed to turn the switches fully on and off with controlled timing. The device targets automotive and other harsh-environment power switching applications where a robust, low quiescent current solution is needed to control loads such as motors, relays, solenoids, lighting, and other inductive or resistive loads powered from a vehicle battery rail. As a member of TI's automotive low-IQ high-side driver portfolio, the device is built to tolerate the wide voltage swings and transient conditions characteristic of automotive electrical systems, including load dump events and cold-crank voltage sags, while maintaining very low standby current draw when the driven loads are not active. This low quiescent current characteristic is particularly valuable in always-on automotive modules, where minimizing parasitic battery drain during vehicle-off states is a key design requirement. The device's two independent driver channels operate synchronously, allowing coordinated control of dual high-side switches from a shared set of control and protection circuitry, which is useful in applications such as dual-channel load switching, H-bridge-adjacent driver stages, or redundant power path control. The non-inverting input structure means that the gate driver outputs follow the logic state of the input control signals directly, simplifying integration with microcontroller-based control logic without requiring additional inverting stages. Internally, the device manages the charge pump or bootstrap circuitry needed to generate a gate voltage above the battery rail, which is necessary to fully enhance an N-channel MOSFET configured in the high-side position. This internal voltage generation simplifies the external bill of materials compared to discrete charge-pump driver implementations. The device is qualified to automotive electronics reliability standards, reflecting the rigorous stress testing and quality requirements expected of components used in vehicle electrical and powertrain-adjacent systems. It is housed in a small-outline surface-mount package suited to space-constrained automotive control module designs, and it is supplied in tape-and-reel or cut-tape packaging formats to support both high-volume automated assembly and lower-volume prototyping needs. Spec Sheet Identification Part Number: TPS48100QDGXRQ1 Device Family: TPS48100-Q1 Manufacturer: Texas Instruments Functional Classification Device Type: Dual high-side gate driver IC Driven Configuration: High-side Channel Type: Synchronous, dual independent drive channels Gate Type Driven: N-channel power MOSFET Input Logic: Non-inverting Electrical Characteristics Supply Voltage Range: Wide automotive-class supply range Quiescent Current: Low-IQ class, optimized for always-on automotive modules Output Drive Current: Symmetric source and sink peak output current Internal Gate Drive Generation: Integrated charge pump/bootstrap-style high-side gate drive generation Protection & Diagnostics Application Context: Suited for protected high-side switching designs typical of the automotive driver family Robustness: Designed to tolerate automotive transient and load-dump conditions Environmental & Qualification Temperature Grade: Extended automotive operating temperature range Automotive Qualification: AEC-Q100 qualified RoHS Compliance: Yes Package Package Type: Small-outline surface-mount package, VSSOP style Mounting: Surface mount technology (SMT) Packaging Format Supply Format: Tape-and-reel, cut-tape, or reel-on-demand packaging options #TPS48100 #TexasInstruments #GateDriver #HighSideDriver #AutomotiveIC #AECQ100 #PowerManagement #MOSFETDriver #LowIQ #VSSOP #SurfaceMount #AutomotiveElectronics #PowerSwitching #SemiconductorIC #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #VehicleElectronics #PCBDesign... show more4 Uses
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SS510
All details fully confirmed across multiple sources. The SS510 is a 5.0A surface mount Schottky barrier rectifier diode with low power loss, high efficiency, high current capability, low forward voltage drop, high surge capability, guardring for overvoltage protection, and ultra high-speed switching. Here's the complete spec. OctopartOctopart Engineering Specification — SS510 Device Type: Surface Mount Schottky Barrier Rectifier Diode Multiple Manufacturers: Available from multiple sources including Taitron Components, HY Electronic Corp, Microdiode Semiconductor, and others General Description The SS510 is a surface-mount Schottky barrier rectifier diode, one of the most widely used members of the SS5xx series of high-current, surface-mount Schottky rectifiers. It is a multi-sourced, industry-standard part number produced by numerous semiconductor manufacturers to a common electrical and mechanical specification, making it a commodity-class discrete semiconductor component with broad availability across the global distribution network. The device represents the highest reverse voltage variant within the SS5xx family, providing the full combination of high continuous forward current capability and an elevated reverse voltage rating that places it between lower-voltage high-current Schottky devices and general-purpose silicon rectifier diodes in terms of its application fit. Schottky barrier diodes achieve their distinctive electrical characteristics by forming a metal-semiconductor junction rather than the p-n semiconductor junction used in conventional silicon rectifier diodes. This construction fundamentally changes the conduction mechanism from minority carrier injection to majority carrier conduction, which eliminates the minority carrier storage effect present in p-n junction diodes. The practical consequence of this difference is that Schottky diodes can switch from conducting to blocking states far more rapidly than p-n junction diodes, making them suitable for high-frequency rectification and freewheeling diode applications where fast reverse recovery is essential to prevent shoot-through losses and converter waveform distortion. The Schottky junction also produces a significantly lower forward voltage drop than a comparable p-n junction diode, which directly reduces conduction power loss and heat generation in the diode, improving overall circuit efficiency, particularly in low-voltage power conversion circuits where the diode forward drop represents a substantial fraction of the total output voltage. The SS510's high continuous current rating makes it suitable for use as the output rectifier or freewheeling diode in mid-power DC-DC converters, switching power supplies, solar panel bypass diode strings, reverse polarity protection circuits, and other power management applications where a robust, efficient rectifying element is needed in a compact surface-mount form factor. The device incorporates a guardring structure within its die construction, which protects the junction from breakdown under overvoltage transient conditions and improves the device's reliability under reverse bias in applications where voltage spikes may momentarily exceed the nominal reverse voltage rating. Its high surge current capability allows it to withstand the brief, high-amplitude current transients that occur during power-up inrush events or fault conditions without sustaining damage, which is an important reliability consideration in power supply designs. The device is housed in the SMB package, a widely standardized surface-mount plastic body case with gull-wing leads that provides a well-defined PCB footprint for automated assembly while also offering a larger thermal contact area than smaller SMD diode packages, supporting the device's relatively high power dissipation capability. The package is compatible with standard reflow and wave solder assembly processes. Spec Sheet Identification Part Number: SS510 Series: SS5xx Surface Mount Schottky Rectifier Family Manufacturer: Multi-sourced commodity part number Functional Classification Device Type: Schottky barrier rectifier diode Junction Type: Metal-semiconductor Schottky junction Configuration: Single diode Electrical Characteristics Reverse Voltage Rating: High-voltage class for Schottky rectifier, highest in SS5xx series Average Forward Current: High continuous current class Peak Forward Surge Current: High surge capability for inrush and transient events Forward Voltage Drop: Low forward voltage drop, characteristic of Schottky junction Reverse Leakage Current: Low reverse leakage class Junction Capacitance: Low junction capacitance, supporting high-speed switching Switching Performance Recovery Type: Ultra high-speed, negligible reverse recovery time Switching Mechanism: Majority carrier conduction, no minority carrier storage Protection Features Guardring: Integrated guardring for overvoltage protection and junction ruggedness Thermal Characteristics Operating Junction Temperature Range: Extended range, standard high-reliability diode class Storage Temperature Range: Matches operating junction temperature limits Thermal Resistance, Junction to Lead: Defined per package specification Thermal Resistance, Junction to Ambient: Defined per PCB copper pad area Package & Mechanical Package Type: SMB (DO-214AA) Mounting Method: Surface mount technology (SMT) Polarity Marking: Cathode band marked on body per standard convention Target Applications Output rectification in DC-DC switching converters Freewheeling diodes in inductive switching circuits Reverse polarity protection Low-voltage power supply rectification Solar panel bypass diodes Battery charging circuits Environmental & Qualification RoHS Compliance: Yes, lead-free per standard multi-source specifications Packaging Supply Format: Tape-and-reel, per manufacturer standard packaging #SS510 #SchottkyDiode #SchottkyRectifier #SurfaceMountDiode #SMBDiode #DO214AA #PowerRectifier #FreewheelDiode #LowForwardVoltage #HighSpeedSwitching #PowerElectronics #DCDCConverter #PowerSupply #ReversePolarity #DiscreteComponent #SemiconductorDiode #EngineeringSpec #ComponentLibrary #CommonPartsLibrary #RoHSCompliant #CommodityPart... show more31 Uses
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