The ON Semiconductor® FDMC86102LZ is an advanced N-Channel Shielded Gate PowerTrench MOSFET designed for high-efficiency DC-DC switching applications. Featuring Shielded Gate Technology, this MOSFET boasts a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) capability of up to 22 A at 25°C. The device exhibits low on-state resistance with a maximum rDS(on) of 24 mΩ at VGS = 10 V and ID = 6.5 A, and 35 mΩ at VGS = 4.5 V and ID = 5.5 A. It includes a gate-to-source zener diode for enhanced ESD protection, with a typical HBM ESD protection level greater than 6 kV. The FDMC86102LZ is RoHS compliant, 100% UIL tested, and offers superior switching performance due to its optimized PowerTrench® process. The component is packaged in a compact MLP 3.3×3.3 format, making it ideal for space-constrained designs. Its thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3°C/W and a junction-to-ambient thermal resistance (RθJA) of 53°C/W when mounted on a 1 in² pad of 2 oz copper.

The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

P-Channel 30 V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3 #P-Channel #pnp #MOSFET #part

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

The DMN10H220L, manufactured by Diodes Incorporated, is a 100V N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 100V, with RDS(on) values of 220mΩ at VGS = 10V and 250mΩ at VGS = 4.5V. It supports a continuous drain current (ID) of up to 1.6A at TA = +25°C. The component is optimized for high-efficiency power management applications, including load switches, and offers low input capacitance, fast switching speed, and low input/output leakage. The DMN10H220L is housed in a SOT23 package, is fully RoHS compliant, and is available in lead-free, halogen-free, and antimony-free "Green" versions. Additionally, an automotive-compliant variant (DMN10H220LQ) is available, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

The BSS138, manufactured by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. This component features a low on-resistance (RDS(ON)) of 3.5Ω at VGS = 10V and a drain-source voltage (BVDSS) of 50V, making it ideal for system/load switching applications. Key benefits include a low gate threshold voltage, low input capacitance, and fast switching speed, ensuring superior performance in various electronic circuits. The BSS138 is available in a SOT23 package and is fully RoHS compliant, halogen and antimony-free, and classified as a "Green" device, suitable for environmentally conscious designs. Additionally, an automotive-compliant version (BSS138Q) is available for applications requiring stringent change control and high reliability, adhering to AEC-Q100/101/200 standards.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.

The LS3018N, manufactured by iSion, is an N-Channel Enhancement Mode MOSFET designed for low voltage drive applications, making it ideal for portable equipment. Available in a compact SOT-323 package, this MOSFET features low on-resistance and fast switching speeds, facilitating easy drive circuit design and parallel configurations. The device operates with a gate-source voltage as low as 2.5V and can handle a continuous drain current of up to 100mA, with a peak drain current of 400mA. The LS3018N supports a maximum drain-source voltage of 60V and a gate-source voltage of +20V. It offers robust thermal performance with a junction-to-ambient thermal resistance of 833°C/W and is compliant with RoHS standards. Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage range of 0.8V to 1.5V, and a static drain-source on-resistance as low as 3.0Ω at VGS of 4V. The component also features minimal input capacitance, making it suitable for high-speed switching applications.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

30V 12A 940mW 9.5mΩ@10V,11.5A P Channel PowerDI3333-8 MOSFETs

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a reference design for the VCNL3040 sensor interfaced via I2C. It includes a VCNL3040 ambient light sensor, a voltage regulator (AP2112K-3.3TRG1), an I2C level shifter using BSS138 MOSFETs, and necessary support components. Circuit interfaces through a JST connector. All components are powered by a 3.3V power source. #referenceDesign #industrialsensing #vishay #template #reference-design

Multi-layer circular BLDC motor controller for a 24 V, up to 750 W system using an ESP32-WROOM with DRV8323RS gate driver, six external MOSFETs, 2 mOhm shunt current sensing, bottom-mounted AS5600 encoder, USB-C programming/user interface, 3.3 V logic powered from the DRV8323RS buck regulator, and heavy motor phase pads sized for approximately 30 A current paths. Target layout is a circular board around 50 mm diameter, expandable if required for thermal management, power routing, and signal integrity.

2 Mosfets

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template