N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole TO-92 #CommonPartsLibrary #Transistor #Mosfet #N-Channel #FET #ZVN2110

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The Sinopower APM2300CA is a robust and reliable N-Channel Enhancement Mode MOSFET manufactured by Sinopower Semiconductor, Inc. This component, offered in a compact SOT-23 package, is designed for power management applications in notebook computers, portable equipment, and battery-powered systems. With a maximum Drain-Source Voltage (VDSS) of 20V and a continuous drain current (ID) of 6A at 10V gate drive, it supports high-efficiency operation. The MOSFET features low on-state resistance, with typ values of 25mΩ at VGS=10V, 32mΩ at VGS=4.5V, and 40mΩ at VGS=2.5V, making it ideal for minimizing conduction losses. Designed to be lead-free and RoHS compliant, the APM2300CA also boasts an excellent thermal resistance of 150°C/W, ensuring reliable performance under various thermal conditions.

The NTMFS4C024N is a high-performance N-Channel MOSFET manufactured by ON Semiconductor, designed for power applications such as CPU power delivery and DC-DC converters. This single MOSFET, housed in a SO-8 FL package, boasts a maximum drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents up to 78 A at 25°C. It features exceptionally low RDS(on) values of 2.8 mΩ at 10 V and 4.0 mΩ at 4.5 V, which minimizes conduction losses. Additionally, the device is optimized for low gate charge and capacitance to reduce driver and switching losses, enhancing overall efficiency. The NTMFS4C024N is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring it meets modern environmental standards. With a maximum power dissipation of 33 W and thermal resistance junction-to-case of 3.8°C/W, it is well-suited for high-power applications requiring robust thermal performance.

The 2N7002E is a small signal MOSFET produced by ON Semiconductor, designed for applications requiring a low RDS(on) and high efficiency in a compact SOT-23 package. This N-Channel MOSFET can handle a maximum drain-to-source voltage (VDSS) of 60 V and a continuous drain current (ID) of up to 310 mA at 25°C. It features trench technology for enhanced performance and is AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications. The device is Pb-free, Halogen-free, and RoHS compliant. Typical applications include low side load switches, level shift circuits, DC-DC converters, and various portable devices such as digital still cameras (DSC), PDAs, and cell phones. The MOSFET's thermal characteristics include a junction-to-ambient thermal resistance of 417°C/W in steady state and 300°C/W for short durations (t ≤ 5 s). The 2N7002E is available in tape and reel packaging, with part numbers 2N7002ET1G and 2N7002ET7G for standard applications, and S2N7002ET1G and S2N7002ET7G for automotive-grade requirements.

The NTMFS4C03N, manufactured by ON Semiconductor, is a high-performance, single N-Channel MOSFET designed for power applications. Encased in a compact SO-8FL package, this component offers a maximum drain-to-source voltage (VDSS) of 30V and a continuous drain current (ID) of up to 136A at 25°C. With an exceptionally low RDS(on) of 2.1 mΩ at VGS of 10V, it minimizes conduction losses, making it ideal for high-efficiency power management. Additionally, the MOSFET features low gate charge (QG) and capacitance, reducing driver losses and enhancing overall system efficiency. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, ensuring adherence to environmental standards. It also boasts a robust thermal performance with a junction-to-case thermal resistance (RθJC) of 1.95°C/W, making it suitable for applications requiring efficient heat dissipation. The NTMFS4C03N is available in tape and reel packaging options, accommodating various manufacturing needs.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The APM2300CA, manufactured by Sinopower Semiconductor, is an N-Channel Enhancement Mode MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. This component features a drain-source voltage (VDSS) rating of 20V and can handle continuous drain currents up to 6A, with a typical RDS(ON) of 25mΩ when VGS is 10V, and various resistance levels at lower gate voltages. The MOSFET exhibits excellent reliability and ruggedness, compliant with RoHS and available in lead-free and halogen-free (Green) versions. Housed in a compact SOT-23 package, the APM2300CA operates across a junction temperature range of -55°C to 150°C, making it suitable for high-efficiency power management applications. Key performance characteristics include low gate charge, excellent switching times, and low gate resistance, which facilitate efficient operation in fast-switching environments.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The ON Semiconductor® FDMC86102LZ is an advanced N-Channel Shielded Gate PowerTrench MOSFET designed for high-efficiency DC-DC switching applications. Featuring Shielded Gate Technology, this MOSFET boasts a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) capability of up to 22 A at 25°C. The device exhibits low on-state resistance with a maximum rDS(on) of 24 mΩ at VGS = 10 V and ID = 6.5 A, and 35 mΩ at VGS = 4.5 V and ID = 5.5 A. It includes a gate-to-source zener diode for enhanced ESD protection, with a typical HBM ESD protection level greater than 6 kV. The FDMC86102LZ is RoHS compliant, 100% UIL tested, and offers superior switching performance due to its optimized PowerTrench® process. The component is packaged in a compact MLP 3.3×3.3 format, making it ideal for space-constrained designs. Its thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3°C/W and a junction-to-ambient thermal resistance (RθJA) of 53°C/W when mounted on a 1 in² pad of 2 oz copper.

The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

P-Channel 30 V 1.4A (Ta) 625mW (Ta) Surface Mount SOT-23-3 #P-Channel #pnp #MOSFET #part

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

The DMN10H220L, manufactured by Diodes Incorporated, is a 100V N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 100V, with RDS(on) values of 220mΩ at VGS = 10V and 250mΩ at VGS = 4.5V. It supports a continuous drain current (ID) of up to 1.6A at TA = +25°C. The component is optimized for high-efficiency power management applications, including load switches, and offers low input capacitance, fast switching speed, and low input/output leakage. The DMN10H220L is housed in a SOT23 package, is fully RoHS compliant, and is available in lead-free, halogen-free, and antimony-free "Green" versions. Additionally, an automotive-compliant variant (DMN10H220LQ) is available, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

The BSS138, manufactured by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. This component features a low on-resistance (RDS(ON)) of 3.5Ω at VGS = 10V and a drain-source voltage (BVDSS) of 50V, making it ideal for system/load switching applications. Key benefits include a low gate threshold voltage, low input capacitance, and fast switching speed, ensuring superior performance in various electronic circuits. The BSS138 is available in a SOT23 package and is fully RoHS compliant, halogen and antimony-free, and classified as a "Green" device, suitable for environmentally conscious designs. Additionally, an automotive-compliant version (BSS138Q) is available for applications requiring stringent change control and high reliability, adhering to AEC-Q100/101/200 standards.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.

The LS3018N, manufactured by iSion, is an N-Channel Enhancement Mode MOSFET designed for low voltage drive applications, making it ideal for portable equipment. Available in a compact SOT-323 package, this MOSFET features low on-resistance and fast switching speeds, facilitating easy drive circuit design and parallel configurations. The device operates with a gate-source voltage as low as 2.5V and can handle a continuous drain current of up to 100mA, with a peak drain current of 400mA. The LS3018N supports a maximum drain-source voltage of 60V and a gate-source voltage of +20V. It offers robust thermal performance with a junction-to-ambient thermal resistance of 833°C/W and is compliant with RoHS standards. Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage range of 0.8V to 1.5V, and a static drain-source on-resistance as low as 3.0Ω at VGS of 4V. The component also features minimal input capacitance, making it suitable for high-speed switching applications.

This project is a Pulse Width Modulation (PWM) Controller, built around an LM555 timer IC. It controls a load connected to a MOSFET, with adjustments via a potentiometer, and uses capacitors, resistors and diodes for various functions. #PWM #controller #project #Template #projectTemplate

This is a IR2110 high side mosfet driver circuit with mosfet included. This is a circuit I use often and I believe it is time to give it its own board and project.

Welcome to your new project. Imagine what you can build here.

Welcome to your new project. Imagine what you can build here.

30V 12A 940mW 9.5mΩ@10V,11.5A P Channel PowerDI3333-8 MOSFETs

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a reference design for the VCNL3040 sensor interfaced via I2C. It includes a VCNL3040 ambient light sensor, a voltage regulator (AP2112K-3.3TRG1), an I2C level shifter using BSS138 MOSFETs, and necessary support components. Circuit interfaces through a JST connector. All components are powered by a 3.3V power source. #referenceDesign #industrialsensing #vishay #template #reference-design

2 Mosfets

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #reusable #module #bms #analog #template

This project is a design for a UV sensor circuit based on the Lite-On LTR-390UV-01. Key components include a voltage regulator (AP2112K-3.3TRG1), level-shifting N-channel MOSFETs (BSS138), resistors, and capacitors. The circuit interface includes I2C communication and power connections, facilitated through JST connectors. #referenceDesign #industrialsensing #liteon #template #reference-design

MOSFETs AGM318MAP PDFN3333-8_L3.3-W3.3 1-PMOS AND 1-NMOS

MOSFETs RUH4040M2 PDFN3333-8_L3.1-W3.2-P0.65-LS3.4-BL LCSC Part Number: C521556 JLCPCB Part Class: Extended Part Manufactured by Ruichips(锐骏半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

MOSFETs VBK3215N SC-70-6_L2.2-W1.3-P0.65-LS2.1-BR LCSC Part Number: C516947 JLCPCB Part Class: Extended Part Manufactured by VBsemi(微碧半导体)

TMF8801-1BM time-of-flight (ToF) sensor from ams-OSRAM. It comprises electronic components such as resistors, capacitors, voltage regulators, and GPIO connectors. The logic signals are managed via Mosfets BSS138 while the Sensor IC is powered & controlled by a 3.3V AP2112K Voltage Regulator.

The TPSM64404, TPSM64406, and TPSM64406E from Texas Instruments are highly integrated synchronous buck power modules designed for high power density and low EMI performance. These modules feature integrated MOSFETs, inductors, and controllers within a compact 6.5mm × 7.0mm × 2mm overmolded package, making them ideal for space-constrained applications. They support a wide input voltage range of 3V to 36V and deliver adjustable output voltages from 0.8V to 16V. The TPSM64404 offers dual 2A outputs or a stackable 4A output, while the TPSM64406 and TPSM64406E provide dual 3A outputs or a stackable 6A output, with the TPSM64406E rated for extended temperature ranges down to -55℃. These modules achieve peak efficiencies exceeding 93.5% and feature ultra-low quiescent current, making them suitable for battery-powered applications. Designed to meet stringent EMI standards, the modules include features such as dual input paths, integrated capacitors, spread spectrum modulation, and low-noise packaging. Additional functionalities include precision enable inputs, power-good indicators, overcurrent protection, thermal shutdown, and the ability to configure for multiphase operation up to 18A. The TPSM6440xx series is optimized for test and measurement, aerospace, defense, and factory automation applications.

Texas Instruments' TPSM6440xx series, including the TPSM64404, TPSM64406, and TPSM64406E, are highly integrated synchronous buck power modules designed for applications requiring high power density and low EMI. These modules support dual output or multiphase single output configurations, operating over a wide input voltage range from 3V to 36V and delivering adjustable output voltages from 0.8V to 16V. Encased in a compact 6.5mm x 7.0mm x 2mm overmolded package, they feature integrated MOSFETs, inductors, and controllers, ensuring ease of design and high efficiency with peak performance exceeding 93.5%. The TPSM6440xx modules are optimized for low noise and EMI, meeting CISPR 11 and 32 Class B emissions standards. They include robust protection features like precision enable inputs, power good indicators, overcurrent, and thermal shutdown protections, making them suitable for demanding applications in test and measurement, aerospace, defense, and factory automation. With a flexible design approach, these modules can be easily configured using Texas Instruments' WEBENCH® Power Designer tool.

This is a reference design of a PCB utilizing the TMF8820-1AM time-of-flight (ToF) sensor from ams-OSRAM. It comprises electronic components such as resistors, capacitors, voltage regulators, and GPIO connectors. The logic signals are managed via Mosfets BSS138 while the Sensor IC is powered & controlled by a 3.3V AP2112K Voltage Regulator. #industrialSensing #referenceDesign #lzer #I2C #osramusa #template #reference-design

This project is a design for a UV sensor circuit based on the Lite-On LTR-390UV-01. Key components include a voltage regulator (AP2112K-3.3TRG1), level-shifting N-channel MOSFETs (BSS138), resistors, and capacitors. The circuit interface includes I2C communication and power connections, facilitated through JST connectors. #referenceDesign #industrialsensing #liteon #template #reference-design

The NTS4001N and NVS4001N are single N-Channel, small signal MOSFETs from ON Semiconductor, housed in a compact SC-70/SOT-323 package. These components are designed for applications requiring efficient low-side load switching, such as Li-Ion battery-supplied devices including cell phones, PDAs, and digital still cameras, as well as for use in buck converters and level shifters. Featuring a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 270 mA at 25°C, these MOSFETs are optimized for fast switching with low gate charge. The gate-to-source voltage (VGS) can withstand up to ±20 V, and the devices are ESD protected and AEC-Q101 qualified, making them suitable for automotive applications. The NTS4001N and NVS4001N are also Pb-Free and RoHS compliant, ensuring environmental compliance. With a typical RDS(on) of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, these MOSFETs offer reliable performance in a small footprint, 30% smaller than the TSOP-6 package.

This project is a Lithium-ion battery charger circuit based on LTC4007 IC. The design incorporates n-channel power MOSFETs and extensive protection features for overcurrent, overvoltage, undervoltage, and overtemperature conditions. It is ideal for portable, battery-powered systems. #project #LTC4007 #ReferenceDesign #charger #BatteryManagement #referenceDesign #bms #analog #template #reference-design #polygon

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.