The AO3414, manufactured by Alpha & Omega Semiconductor, is an N-Channel Enhancement Mode Field Effect Transistor (FET) designed using advanced trench technology to deliver superior RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V. Ideal for load switch and PWM applications, the AO3414 is available in a Pb-free version that complies with ROHS and Sony 259 specifications, and a Green Product variant (AO3414L), both of which are electrically identical. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 4.2A at VGS=4.5V, and a maximum RDS(ON) of 50mΩ at VGS=4.5V. The device is housed in a TO-236 (SOT-23) package, ensuring compact and efficient thermal performance. Additionally, the AO3414 boasts a maximum power dissipation of 1.4W at TA=25°C, a gate-source voltage (VGS) rating of +8V, and an operating junction temperature range of -55°C to 150°C. This component is optimized for consumer market applications, offering reliable performance and compliance with environmental standards.

The APM2300CA, manufactured by Sinopower Semiconductor, is an N-Channel Enhancement Mode MOSFET designed for power management applications in notebook computers, portable equipment, and battery-powered systems. This component features a drain-source voltage (VDSS) rating of 20V and can handle continuous drain currents up to 6A, with a typical RDS(ON) of 25mΩ when VGS is 10V, and various resistance levels at lower gate voltages. The MOSFET exhibits excellent reliability and ruggedness, compliant with RoHS and available in lead-free and halogen-free (Green) versions. Housed in a compact SOT-23 package, the APM2300CA operates across a junction temperature range of -55°C to 150°C, making it suitable for high-efficiency power management applications. Key performance characteristics include low gate charge, excellent switching times, and low gate resistance, which facilitate efficient operation in fast-switching environments.

The ON Semiconductor® FDMC86102LZ is an advanced N-Channel Shielded Gate PowerTrench MOSFET designed for high-efficiency DC-DC switching applications. Featuring Shielded Gate Technology, this MOSFET boasts a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) capability of up to 22 A at 25°C. The device exhibits low on-state resistance with a maximum rDS(on) of 24 mΩ at VGS = 10 V and ID = 6.5 A, and 35 mΩ at VGS = 4.5 V and ID = 5.5 A. It includes a gate-to-source zener diode for enhanced ESD protection, with a typical HBM ESD protection level greater than 6 kV. The FDMC86102LZ is RoHS compliant, 100% UIL tested, and offers superior switching performance due to its optimized PowerTrench® process. The component is packaged in a compact MLP 3.3×3.3 format, making it ideal for space-constrained designs. Its thermal characteristics include a junction-to-case thermal resistance (RθJC) of 3°C/W and a junction-to-ambient thermal resistance (RθJA) of 53°C/W when mounted on a 1 in² pad of 2 oz copper.

The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-220AB #CommonPartsLibrary #Transistor #FET

The FDV301N from ON Semiconductor® is an N-Channel logic level enhancement mode field effect transistor (FET), designed using ON Semiconductor's proprietary, high cell density, DMOS technology. This component is optimized for low voltage applications, offering a compact and efficient alternative to traditional digital transistors. It boasts a drain-source voltage (VDS) of 25V, a continuous drain current of 0.22A, and a peak drain current of 0.5A. The FDV301N features very low gate drive requirements, making it suitable for direct operation in 3V circuits, with a gate threshold voltage (VGS(th)) of less than 1.06V. The device also includes a gate-source Zener diode for enhanced ESD ruggedness, rated at over 6kV Human Body Model. With a maximum RDS(ON) of 5Ω at VGS=2.7V and 4Ω at VGS=4.5V, this FET is ideal for applications requiring minimal on-state resistance. The FDV301N is available in various packages including SOT-23, SuperSOT™-6, and SuperSOT™-8, providing flexibility for different design requirements.

The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

The DMN10H220L, manufactured by Diodes Incorporated, is a 100V N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 100V, with RDS(on) values of 220mΩ at VGS = 10V and 250mΩ at VGS = 4.5V. It supports a continuous drain current (ID) of up to 1.6A at TA = +25°C. The component is optimized for high-efficiency power management applications, including load switches, and offers low input capacitance, fast switching speed, and low input/output leakage. The DMN10H220L is housed in a SOT23 package, is fully RoHS compliant, and is available in lead-free, halogen-free, and antimony-free "Green" versions. Additionally, an automotive-compliant variant (DMN10H220LQ) is available, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

The BSS138, manufactured by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. This component features a low on-resistance (RDS(ON)) of 3.5Ω at VGS = 10V and a drain-source voltage (BVDSS) of 50V, making it ideal for system/load switching applications. Key benefits include a low gate threshold voltage, low input capacitance, and fast switching speed, ensuring superior performance in various electronic circuits. The BSS138 is available in a SOT23 package and is fully RoHS compliant, halogen and antimony-free, and classified as a "Green" device, suitable for environmentally conscious designs. Additionally, an automotive-compliant version (BSS138Q) is available for applications requiring stringent change control and high reliability, adhering to AEC-Q100/101/200 standards.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.

The LS3018N, manufactured by iSion, is an N-Channel Enhancement Mode MOSFET designed for low voltage drive applications, making it ideal for portable equipment. Available in a compact SOT-323 package, this MOSFET features low on-resistance and fast switching speeds, facilitating easy drive circuit design and parallel configurations. The device operates with a gate-source voltage as low as 2.5V and can handle a continuous drain current of up to 100mA, with a peak drain current of 400mA. The LS3018N supports a maximum drain-source voltage of 60V and a gate-source voltage of +20V. It offers robust thermal performance with a junction-to-ambient thermal resistance of 833°C/W and is compliant with RoHS standards. Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage range of 0.8V to 1.5V, and a static drain-source on-resistance as low as 3.0Ω at VGS of 4V. The component also features minimal input capacitance, making it suitable for high-speed switching applications.

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual, N-channel MOSFETs designed for small signal applications. These components are optimized for low gate charge to enable fast switching speeds and are housed in a compact SC-88 package, which is noted to be 30% smaller than the TSOP-6, allowing for savings in PCB space. Both variants operate with a drain-to-source voltage (VDSS) of 30 V and can handle continuous drain currents of up to 250 mA at 25℃, reducing to 180 mA at 85℃. The devices are distinctive for their ESD protected gates and meet the AEC Q101 qualification criteria, making the NVTJD4001N version particularly suitable for automotive and high-reliability applications. With power dissipation cap of 272 mW at 25℃, these components are ideal for low-power applications like low-side load switches, Li-Ion battery-supplied devices, buck converters, and level shifts. They are furnished in a lead-free, RoHS-compliant package, assuring environmental consideration in both manufacturing and application use. ON Semiconductor emphasizes several key attributes of the NTJD4001N and NVTJD4001N, including their low gate charge feature, small footprint, and robust durability, marked by ESD protection and AEC Q101 qualification for the NVTJD4001N variation. These characteristics make these MOSFETs viable solutions for engineers focusing on optimizing space and power efficiency in their circuit designs, particularly in the realms of portable electronic devices, power management circuits, and various automotive applications.