The Vishay Siliconix Si2324DS is a high-performance N-Channel MOSFET designed for applications requiring efficient switching and power management. This component, housed in a compact TO-236 (SOT-23) package, features a drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 2.3A at 25°C. The Si2324DS offers low on-resistance (R_DS(on)) values of 0.234Ω at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss and high efficiency. With a typical gate charge (Q_g) of 2.9nC, it is suitable for high-speed switching applications. The MOSFET is fully Rg and UIS tested, ensuring reliability and robustness in demanding environments. This component is ideal for use in DC/DC converters, load switches, and LED backlighting in LCD TVs, making it a versatile choice for various power management applications. The Si2324DS is lead-free, halogen-free, and RoHS compliant, aligning with environmental and safety standards.

The HY2213 series, developed and manufactured by HYCON Technology Corp., presents a high-precision, energy-efficient battery charge balance integrated circuit (IC) specifically designed for single-cell lithium-ion or lithium-polymer batteries. This component encompasses a wide range of features tailored for multi-cell Li-ion rechargeable battery packs applications, including a high-precision voltage detection circuit capable of monitoring overcharge situations with a detection voltage range between 4.000V and 4.500V. Its unique design allows for delay times generated internally, eliminating the need for external capacitors and reducing the overall component count. Operating with a remarkably low consumption current in both operation (Typ. value 2.5uA, Max. value 3.5uA at VDD=3.9V) and standby modes (Max. value 0.5uA at VDD=2.7V), the HY2213 series is designed for energy-sensitive applications. It also offers versatility in operation temperature, ranging from -40℃ to +85℃, and comes in a compact SOT-23-6 package, making it suitable for space-constrained applications. The HY2213 series underscores HYCON Technology Corp.'s commitment to advancing battery management solutions by integrating overcharge detection and release, standby detection, and charge balance functionality into a single, efficient, and easy-to-use IC.

Idealized source of current.

The ATtiny45/85 USB Phone Charge Guard regulates charging by monitoring voltage, current, power, and energy, protecting Li-ion batteries.

a. Linearity 1. Design a network composed of resistors 1 and a current source located in a peripheral mesh. This network should have at least two nodes and three meshes. Simulate this network in your preferred simulation software. In the simulator, change 2 the value of current in your current source. Record and analyze the changes you noticed in the network parameters. Pay close attention to the branch currents. 2. Like step 1, design a network composed of resistors. However, this time, instead of a current source, use a voltage source. Also, increase the complexity of the network by either adding more nodes and meshes, placing the voltage source in a non-peripheral mesh, or both. Simulate this network. In the simulator, change the value of voltage in your voltage source (like step 1). Record and analyze the changes you noticed in the network parameters. Pay close attention to the branch currents. 3. Make a generalization out of your results in steps 1 and 2.

LM3671 3.3V Buck Converter Breakout - 3.3V Output 600mA Max. Your power supply problems just got SUPER SOLVED! This 3.3V Buck Converter Breakout board is great for supplying power to low voltage circuits from a single Li-Ion cell battery or USB power. This chip provides up to 600-mA load current across the entire input voltage range of 3.5 to 5.5V. Great for your portable project, we made this "pin compatible" with the LM1117-3.3V TO-220 chip so you can swap it in for better performance (90-95% efficiency!) There's also an ENable pin, tie it low to shut down the output completely.

The FDV301N from ON Semiconductor® is an N-Channel logic level enhancement mode field effect transistor (FET), designed using ON Semiconductor's proprietary, high cell density, DMOS technology. This component is optimized for low voltage applications, offering a compact and efficient alternative to traditional digital transistors. It boasts a drain-source voltage (VDS) of 25V, a continuous drain current of 0.22A, and a peak drain current of 0.5A. The FDV301N features very low gate drive requirements, making it suitable for direct operation in 3V circuits, with a gate threshold voltage (VGS(th)) of less than 1.06V. The device also includes a gate-source Zener diode for enhanced ESD ruggedness, rated at over 6kV Human Body Model. With a maximum RDS(ON) of 5Ω at VGS=2.7V and 4Ω at VGS=4.5V, this FET is ideal for applications requiring minimal on-state resistance. The FDV301N is available in various packages including SOT-23, SuperSOT™-6, and SuperSOT™-8, providing flexibility for different design requirements.

The AO3416, manufactured by Alpha & Omega Semiconductor, is a 20V N-Channel MOSFET designed using advanced trench technology to deliver superior RDS(ON) performance, low gate charge, and compatibility with gate voltages as low as 1.8V. Ideal for use as a load switch or in PWM applications, the AO3416 features ESD protection and is offered in a compact SOT23 package. Key specifications include a drain-source voltage (VDS) of 20V, a continuous drain current (ID) of 6.5A at VGS=4.5V, and a maximum RDS(ON) of 34mΩ at VGS=1.8V. The component operates efficiently across a temperature range of -55℃ to 150℃ and supports pulsed drain currents up to 30A. Additionally, the AO3416's thermal characteristics ensure robust performance, with a maximum junction-to-ambient thermal resistance of 125°C/W. This device is designed for the consumer market and is not authorized for use in life support systems.

Idealized source of current.

The DMN10H220L, manufactured by Diodes Incorporated, is a 100V N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage (VDSS) of 100V, with RDS(on) values of 220mΩ at VGS = 10V and 250mΩ at VGS = 4.5V. It supports a continuous drain current (ID) of up to 1.6A at TA = +25°C. The component is optimized for high-efficiency power management applications, including load switches, and offers low input capacitance, fast switching speed, and low input/output leakage. The DMN10H220L is housed in a SOT23 package, is fully RoHS compliant, and is available in lead-free, halogen-free, and antimony-free "Green" versions. Additionally, an automotive-compliant variant (DMN10H220LQ) is available, meeting AEC-Q100/101/200 standards and manufactured in IATF 16949 certified facilities.

The NTK3134N from ON Semiconductor is a high-performance, single N-Channel MOSFET designed for power and interface switching applications in ultra-small portable electronics. Packaged in a compact SOT-723 form factor, which is 44% smaller in footprint and 38% thinner than the SC89, this MOSFET features a low RDS(on) for efficient load switching. It operates at low logic level gate drives, with a maximum drain-to-source voltage (VDSS) of 20V and a continuous drain current (ID) of up to 890mA at 25°C. The component supports pulsed drain currents up to 1.8A and boasts ESD protection. The NTK3134N is also Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it an environmentally friendly choice for designers. Key applications include load/power switching, interface switching, logic level shifting, and battery management.

Diode for alternating current. See https://en.wikipedia.org/wiki/DIAC

Simple plug-and-play breadboard power supply with current monitoring output, LED indicators, switches for both rails, and decoupling capacitors.

Reference design for Li-ion single cell charger based on TP4056 IC. Rprog setting output current to 900mA. VIN and BAT connector are block terminal connectors. #Template #module #referenceDesign #charger #TP4056 #reusable #module #batterycharger #sublayout

The OPA835 and OPA2835 from Texas Instruments are single and dual ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for optimal performance in battery-powered and portable systems. Operating over a power supply range of 2.5 V to 5.5 V, these op amps consume only 250 µA per channel and offer a unity gain bandwidth of 56 MHz, making them industry leaders in performance-to-power ratio for rail-to-rail amplifiers. These components feature a quiescent current of 250 µA/ch (typical), with a power-down mode reducing current to 0.5 µA (typical), a slew rate of 160 V/µs, a rise time of 10 ns for a 2 V step, and a settling time of 55 ns to 0.1% for a 2 V step. Additional features include a signal-to-noise ratio (SNR) of 0.00015% (-116.4 dBc) at 1 kHz (1 VRMS), total harmonic distortion (THD) of 0.00003% (-130 dBc) at 1 kHz (1 VRMS), and a wide input voltage noise of 9.3 nV/√Hz at 100 kHz. The OPA835 and OPA2835 provide rail-to-rail output swing and input voltage range from -0.2 V to 3.9 V (5-V supply), supporting high-density, low-power signal conditioning applications with an operating temperature range from -40°C to +125°C. These components come in various package options, ensuring flexible integration into diverse electronic designs.

This project is a Advanced Dual Cell Lithium-Ion/Lithium-Polymer Charge Management Controllers utilizing the MCP73844 integratedcircuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. #project #Template #charger #MCP73844 #2cell #referenceDesign #batterycharger #template #bms #microchip #reference-design #polygon /

Reference design for Li-ion single cell charger based on TP4056 IC. Rprog setting output current to 900mA. VIN and BAT connector are block terminal connectors. #Template #module #referenceDesign #charger #TP4056 #reusable #module #batterycharger #sublayout

The NTJD4001N and NVTJD4001N from ON Semiconductor are dual N-Channel MOSFETs designed for small signal applications. Encased in a compact SC-88 (SOT-363) package, these MOSFETs offer a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 250 mA at 25°C. Key features include low gate charge for fast switching, ESD-protected gates, and AEC-Q101 qualification, making them suitable for use in automotive environments. These MOSFETs are ideal for applications such as low side load switches, Li-Ion battery-powered devices (e.g., cell phones, PDAs, DSCs), buck converters, and level shifters. The devices are RoHS compliant and Pb-free, ensuring environmental compliance and reliability. The thermal resistance from junction to ambient is 458°C/W, and the devices can operate within a temperature range of -55°C to 150°C. The NTJD4001N and NVTJD4001N also feature low RDS(on) values, ensuring efficient performance in various electronic circuits.

The Texas Instruments OPA835 and OPA2835 are ultra-low-power, rail-to-rail output, negative-rail input, voltage-feedback (VFB) operational amplifiers designed for operation across a wide power supply range of 2.5 V to 5.5 V with a single supply or +1.25 V to +2.75 V with a dual supply. These components are notable for their industry-leading performance-to-power ratio, which features a quiescent current of just 250 µA per channel and a unity gain bandwidth of 56 MHz. They are ideal for battery-powered, portable applications where power efficiency is critical, without compromising on high-frequency performance. The OPAx835 series brings the added benefit of a power-savings mode, reducing current consumption to less than 1.5 µA, making them an attractive choice for high-frequency amplifiers in battery-powered systems. Their compact package options, including SOT-23, SOIC, VSSOP, UQFN, and QFN, cater to space-constrained applications, providing a versatile solution for low-power signal conditioning, audio ADC input buffers, low-power SAR and ΔΣ ADC drivers, portable systems, low-power systems, high-density systems, and ultrasonic flow meters.

The NTMFS4C029N, manufactured by ON Semiconductor, is a high-performance, single N-channel MOSFET designed for power applications. This MOSFET features a low RDS(on) to minimize conduction losses, low capacitance to reduce driver losses, and an optimized gate charge to minimize switching losses. It is packaged in a compact SO-8 FL package, making it suitable for space-constrained designs. The component can handle a maximum drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 46 A at 25°C. It is ideal for applications such as CPU power delivery and DC-DC converters. The NTMFS4C029N is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets modern environmental and safety standards.

This project is a Lithium-ion battery charger circuit utilizing the MCP73831 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 500mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #microchip #reference-design #polygon.

The PAN JIT SEMICONDUCTOR PJC831K is a 50V N-Channel Enhancement Mode MOSFET designed for switch load and PWM applications, with added ESD protection up to 2KV HBM. Utilizing advanced trench process technology, it offers low RDS(on) values of <1.60Ω at VGS=10V, <2.50Ω at VGS=4.5V, and <4.50Ω at VGS=2.5V. The component is capable of handling a continuous drain current of 360 mA and a pulsed drain current of up to 1200 mA, constrained by a maximum power dissipation of 236 mW at 25°C. The MOSFET is housed in a SOT-323 package with excellent thermal resistance characteristics (530°C/W junction to ambient). It meets RoHS 2.0 compliance and IEC 61249 standards with a green molding compound. Featuring minimal gate charge and fast switching times, this MOSFET is optimized for efficiency and reliability in demanding applications.

This project is a Lithium-ion battery charger circuit utilizing the STC4054 integrated circuit. It includes input and output connectors, a charging current programming resistor, decoupling capacitors, and a charge status indicator LED. The design can deliver up to 800mA charge current. #project #Template #charger #referenceDesign #batterycharger #template #bms #STC4054 #stm #reference-design #polygon

Allows turning current on and off. See https://en.wikipedia.org/wiki/Analogue_switch

The LS3018N, manufactured by iSion, is an N-Channel Enhancement Mode MOSFET designed for low voltage drive applications, making it ideal for portable equipment. Available in a compact SOT-323 package, this MOSFET features low on-resistance and fast switching speeds, facilitating easy drive circuit design and parallel configurations. The device operates with a gate-source voltage as low as 2.5V and can handle a continuous drain current of up to 100mA, with a peak drain current of 400mA. The LS3018N supports a maximum drain-source voltage of 60V and a gate-source voltage of +20V. It offers robust thermal performance with a junction-to-ambient thermal resistance of 833°C/W and is compliant with RoHS standards. Key electrical characteristics include a drain-source breakdown voltage of 60V, a gate threshold voltage range of 0.8V to 1.5V, and a static drain-source on-resistance as low as 3.0Ω at VGS of 4V. The component also features minimal input capacitance, making it suitable for high-speed switching applications.