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    step

    IRLML2502/IRLML2502.3dshapes/SOT-23-3P_L2.9-W1.3-H1.0-LS2.4-P0.95.step

    IRLML2502/IRLML2502 Model3D Model
    IRLML2502_C518800 Symbol.svg

    IRLML2502_C518800 Symbol.svg

    IRLML2502_C518800 SymbolDefault
    IRLML2502-thumb.png

    IRLML2502-thumb.png

    IRLML2502-thumbThumbnail
    kicad_mod

    IRLML2502/IRLML2502.pretty/SOT-23-3_L2.9-W1.3-P1.90-LS2.4-BR.kicad_mod

    IRLML2502/IRLML2502 FootprintFootprint

    IRLML2502

    IRLML2502 thumbnail
    MOSFET N-CH 20V 3.6A SOT-23
    The IRLML2502 is a small-signal N-channel enhancement mode power MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used as a load switch or power control transistor in compact electronic systems such as battery-powered devices, LED drivers, and DC-DC converters.
    It features a low on-resistance (RDS(on)), which allows it to switch higher currents with minimal power loss and heat generation. The device is optimized for logic-level gate drive, meaning it can be driven directly from microcontrollers (like 3.3 V or 5 V systems).
    It is packaged in a compact SOT-23 (Micro3) surface-mount package, making it suitable for space-constrained PCB designs.
    Key Features N-channel enhancement mode MOSFET Drain-source voltage (VDS) up to 20 V Continuous drain current up to ~4.2 A (at 25°C) Very low RDS(on) ≈ 45 mΩ @ VGS = 4.5 V Logic-level gate drive capability (works with 2.5–4.5 V signals) Fast switching performance Compact SOT-23 (Micro3) surface-mount package Low gate charge for efficient switching Suitable for battery-powered and low-voltage applications RoHS compliant, lead-free design

    Properties

    HUASHUO(华朔)

    Q

    IRLML2502

    C518800

    SOT-23-3_L2.9-W1.3-P1.90-LS2.4-BR

    MOSFETs

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