Transistor PWM Control Analysis
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Aquí tienes una tabla de ejemplo con parámetros teóricos usando una ganancia de 132. Se asume:
- Tensión PWM: 12 V
- Caída base–emisor (V₍BE₎): 0.7 V
- Fórmula para la corriente base:
IB=RB12V−0.7V - Corriente de colector:
IC=hFE×IBcon hFE=132 - Potencia disipada (aproximada):
P=VCE×IC - Se han asignado valores de V₍CE₎ representativos en función del nivel de sobreexcitación.
La siguiente tabla muestra cómo variarían los parámetros al disminuir RB desde 1 kΩ hasta 200 Ω:
Table
| RB (Ω) | IB (mA) | IC (mA) | VBE (V) | VCE (V) | hFE | Potencia (mW) | Estado |
|---|---|---|---|---|---|---|---|
| 1000 | 11.3 | 11.3 × 132 = 1492 | 0.7 | 0.20 | 132 | 0.20 × 1492 ≈ 298 | Operación forzada; ya excede límites seguros |
| 750 | 11.3/0.75 ≈ 15.1 | 15.1 × 132 = 1989 | 0.7 | 0.20 | 132 | 0.20 × 1989 ≈ 398 | Estrés elevado |
| 500 | 11.3/0.5 ≈ 22.6 | 22.6 × 132 = 2983 | 0.7 | 0.25 | 132 | 0.25 × 2983 ≈ 746 | Alto riesgo térmico |
| 300 | 11.3/0.3 ≈ 37.7 | 37.7 × 132 = 4968 | 0.7 | 0.30 | 132 | 0.30 × 4968 ≈ 1490 | Condición extrema; fallo inminente |
| 200 | 11.3/0.2 ≈ 56.5 | 56.5 × 132 = 7458 | 0.7 | 0.30 | 132 | 0.30 × 7458 ≈ 2237 | Falla térmica: Transistor quemado |
Notas:
- Se han redondeado los valores para facilitar la lectura.
- Las mediciones reales deben realizarse con instrumentos adecuados (por ejemplo, uso de resistencias shunt y osciloscopio).
- Los valores teóricos muestran cómo, al reducir RB, la corriente base incrementa, lo que a su vez eleva la corriente de colector (IC) hasta niveles que, bajo condiciones de saturación con un ciclo de trabajo elevado, favorecen la acumulación de calor y el fallo térmico del dispositivo.
Esta tabla sirve de guía para definir los parámetros a medir experimentalmente y para observar cómo la reducción de RB impulsa gradualmente al transistor hacia el fallo térmico.
Tabla de parámetros
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R1
Resistance
1k Ω
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