Part Data Review and Verification

Completed the part review and created Part Verification Report. The existing Datasheet URL was already set, pinout and SO-8 footprint matched the Vishay datasheet, and the only cleanup items found were unspecified terminal pin types/descriptions plus a minor MPN separator difference (_ vs -).
Suggested next steps:
  • Set explicit Source/Gate/Drain pin descriptions and pin types.
  • Normalize the MPN to the manufacturer ordering format if desired.
  • Add key electrical specs as searchable part properties.
Set explicit Source, Gate, and Drain pin descriptions and electrical pin types.
I’ll update the eight terminal properties so each pin has an explicit Source/Gate/Drain description and an appropriate MOSFET electrical pin type, then verify the schematic properties.
Updated and verified all eight terminal properties.
  • Pins 1–3: Source terminal, Pin Type Passive
  • Pin 4: Gate control input, Pin Type Input
  • Pins 5–8: Drain terminal, Pin Type Passive
No open items.
Finalize part library
Add specs properties
Normalize MPN
Run consistency check
Export part package

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Part Verification Report: SQ4435EY-T1_GE3
Reviewed project information
Datasheet identity and key specs
The existing Datasheet URL was already populated, so no property update was required. The datasheet identifies the device as Vishay Siliconix SQ4435EY, automotive P-channel 30 V (D-S), 175 °C MOSFET, AEC-Q101 qualified, TrenchFET power MOSFET, RoHS compliant, halogen-free.
Key electrical specifications from the datasheet:

Table


ParameterDatasheet value
ConfigurationSingle P-channel MOSFET
PackageSO-8 / SOIC narrow, JEDEC MS-012
VDS-30 V
VGS max±20 V
Continuous drain current, TC=25 °C-15 A
Continuous drain current, TC=125 °C-8.7 A
Pulsed drain current-60 A
RDS(on), VGS=-10 V, ID=-8 A13 mΩ typ, 18 mΩ max
RDS(on), VGS=-4.5 V, ID=-6 A23 mΩ typ, 31 mΩ max
VGS(th), ID=-250 µA-1.5 V min, -2.0 V typ, -2.5 V max
Power dissipation, TC=25 °C6.8 W
TJ/Tstg-55 °C to +175 °C
RθJA, PCB mount85 °C/W
RθJF, junction-to-foot drain22 °C/W
Pinout cross-check
Datasheet SO-8 top-view pinout:

Table


PinDatasheet functionSymbol terminal foundResult
1SourceS_1Match
2SourceS_2Match
3SourceS_3Match
4GateGMatch
5DrainD_1Match
6DrainD_2Match
7DrainD_3Match
8DrainD_4Match
Footprint/package cross-check
The footprint has eight SMD pads and SO-8 style silk/fab geometry with pin-1 indicator. The visible body/silk dimensions are consistent with narrow SOIC-8 style geometry, and the datasheet package is SO-8 / SOIC narrow, JEDEC MS-012. No footprint pad numbering mismatch was found from the available layout data.
Mismatches / cleanup items
  • No critical pinout mismatch found.
  • No critical footprint/package mismatch found.
  • Datasheet URL was already set; no update was needed.
  • Symbol terminal descriptions are implicit in the terminal designators (S_1, S_2, S_3, G, D_1, D_2, D_3, D_4), but each terminal's Pin Type property is still set to Unspecified. For better library quality, set Source/Drain/Gate pin descriptions and electrical pin types explicitly.
  • MPN formatting differs slightly: project uses SQ4435EY-T1_GE3, while datasheet ordering line shows SQ4435EY-T1-GE3. This appears to be separator formatting rather than a functional mismatch, but distributor/manufacturer ordering should be checked if exact orderability matters.
  • Reviewed project information

  • Datasheet identity and key specs

  • Pinout cross-check

  • Footprint/package cross-check

  • Mismatches / cleanup items

Documents

  • Part Verification Report: SQ4435EY-T1_GE3

Assets

SQ4435EY-T1_GE3-thumb.png

SQ4435EY-T1_GE3-thumb.png

SQ4435EY-T1_GE3-thumbThumbnail
SQ4435EY-T1_GE3

SQ4435EY-T1_GE3

SQ4435EY-T1_GE3 Symbol.svgDefault
kicad_mod

SQ4435EY-T1_GE3

SOIC127P600X175-8N.kicad_modFootprint
stp

SQ4435EY-T1_GE3

SQ4435EY-T1_GE3.stp3D Model

SQ4435EY-T1_GE3

SQ4435EY-T1_GE3 thumbnail
P-Channel 30V 15A (Tc) 6.8W (Tc) Surface Mount 8-SOIC
The SQ4435EY-T1_GE3 is an automotive-grade P-Channel enhancement-mode TrenchFET® power MOSFET from Vishay Siliconix. It is designed for efficient high-side load switching and power management applications, offering low on-resistance, fast switching performance, and excellent thermal reliability. Qualified to AEC-Q101, this MOSFET is suitable for demanding automotive and industrial environments. It is housed in a compact SO-8 surface-mount package, making it ideal for space-constrained designs.
Key Features P-Channel enhancement-mode TrenchFET® MOSFET 30 V drain-to-source voltage (VDS) 15 A continuous drain current (TC = 25°C) Low RDS(on): 18 mΩ max @ VGS = -10 V 31 mΩ max @ VGS = -4.5 V AEC-Q101 qualified for automotive applications Operating junction temperature: -55°C to +175°C Low conduction losses for improved power efficiency Fast switching characteristics 100% Rg and UIS tested RoHS compliant and halogen-free Compact SO-8 surface-mount package Typical Applications Automotive high-side load switches Battery management systems (BMS) DC-DC converters Power distribution switches Motor control circuits Industrial power management Reverse battery protection

Properties

SQ4435EY-T1_GE3

Vishay Siliconix

Transistors

Q

parametric-v1

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