Part Data Review and Datasheet Validation

flux

Reviewed the Micron MT29F256G08AUCABH3-10ITZ:A part data against the datasheet.
Key specs confirmed
  • Manufacturer: Micron
  • MPN: MT29F256G08AUCABH3-10ITZ:A
  • Type: SLC NAND Flash
  • Density / organization: 256 Gbit, 32G × 8
  • Interface: Parallel asynchronous/synchronous NAND
  • Supply: 2.7 V to 3.6 V
  • Speed: 100 MHz
  • Temperature: -40 °C to +85 °C
  • Package: 100-ball LBGA, H3, 12 mm × 18 mm, 1 mm pitch
Datasheet
  • A Datasheet URL is already set, so I did not overwrite it.
  • The datasheet lookup resolved to Micron/Digi-Key-hosted material for the same MPN/package.
Symbol / footprint cross-check
  • Schematic exposes 100 terminal pins, matching the datasheet’s 100-ball assignment.
  • PCB footprint has 100 pads, matching the 100-ball LBGA package.
  • Ball assignments checked against the datasheet table: no signal-to-ball mismatches found in the visible symbol/pad naming.
  • Power, ground, I/O, NC, DNU, RFU, CE#, R/B#, ALE/CLE, WE#/CLK, RE#/W/R#, WP#, and DQ pins align with the datasheet.
Issues / gaps flagged
  • All schematic terminals have Pin Type = Unspecified; the datasheet defines clear types such as Input, I/O, Output open-drain, Supply, NC, DNU, and RFU.
  • Pin descriptions are not populated as explicit properties; the signal names are correct, but descriptive metadata is incomplete.
  • The footprint metadata visible in the project does not expose mechanical details such as 12 × 18 mm body, 1 mm pitch, Ø0.45 mm balls, Ø0.40 mm SMD pads, even though the pad count is correct.
adrian95

adrian95

Populate the pin types and descriptions from the datasheet. also add section for all the terminal based on the datasheet

flux

I’ll update every terminal with datasheet-derived Pin Type, Pin Description, and Section, then re-read the schematic to verify the metadata is populated consistently.

flux

Done. I populated datasheet-derived Pin Type, Pin Description, and Section metadata across all 100 terminals.
Sections used:
  • Power for VCC/VCCQ/VSS/VSSQ
  • Data for DQx and DQS pins
  • Control for ALE, CLE, CE#, WP#, WE#/CLK, RE#/W/R#, and R/B#
  • No Connect for NC pins
  • Reserved / Do Not Use for DNU and RFU pins
I also verified the schematic afterward; the updated metadata is present on the terminals.
Run metadata review
Normalize sections
Add mechanical metadata
Verify pin mapping
Export part data
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    Assets

    kicad_mod

    BGA100C100P10X17_1200X1800X140.kicad_mod

    FP_BGA100C100P10X17_1200X1800X140Footprint
    stp

    MT29F256G08AUCABH3-10ITZ_A.stp

    3D_MT29F256G08AUCABH3-10ITZ_A3D Model
    MT29F256G08AUCABH3-10ITZ_A

    MT29F256G08AUCABH3-10ITZ_A

    MT29F256G08AUCABH3-10ITZ_A Symbol.svgDefault
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    MT29F256G08AUCABH3-10ITZ:A

    MT29F256G08AUCABH3-10ITZ:A thumbnail
    SLC NAND Flash Parallel/Serial 3.3V 256G-bit 32G x 8 100-Pin LBGA
    FLASH - NAND (SLC) Memory IC 256Gbit Parallel 100 MHz 100-LBGA (12x18)
    The MT29F256G08AUCABH3-10ITZ:A is a high-density 256Gb Single-Level Cell (SLC) NAND Flash memory device from Micron Technology. It provides non-volatile data storage with high reliability, fast read/write performance, and long endurance, making it suitable for industrial, networking, embedded computing, automotive, and data-logging applications. The device supports both asynchronous and synchronous interfaces and complies with the Open NAND Flash Interface (ONFI) standard for enhanced interoperability and performance. It is housed in a compact 100-ball LBGA package (12 mm × 18 mm).
    • Open NAND Flash Interface (ONFI) 2.2-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 8640 bytes (8192 + 448 bytes) – Block size: 128 pages (1024K + 56K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 32Gb: 4096 blocks; 64Gb: 8192 blocks; 128Gb: 16,384 blocks; 256Gb: 32,768 blocks • Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s • Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) – Read/write throughput per pin: 50 MT/s • Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) • Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V • Command set: ONFI NAND Flash Protocol • Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 114). • RESET (FFh) required as first command after power-on • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface • Copyback operations supported within the plane from which data is read • Quality and reliability – Data retention: JESD47G compliant; see qualification report – Endurance: 60,000 PROGRAM/ERASE cycles • Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC • Package – 52-pad LGA – 48-pin TSOP – 100-ball BGA – 132-ball BGA
    #Micron #NANDFlash #SLCNAND #FlashMemory #NonVolatileMemory #ONFI #EmbeddedSystems #IndustrialElectronics #DataStorage #MemoryIC #LBGA100 #HighReliability #MT29F256G08AUCABH310ITZA #MicronMemory #ParallelNANDFlash

    Properties

    MT29F256G08AUCABH3-10ITZ:A

    Micron

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