Completed the part review and normalized the Datasheet URL to the official TI PDF: https://www.ti.com/lit/ds/symlink/drv8262-q1.pdf. I documented the detailed findings in DRV8262QDDWRQ1 Part Review (drv8262qddwrq1-part-review).
Open items flagged:
Description appears to overstate ratings: datasheet is 60 V operating, not 70 V operating; current is 16 A peak single / 8 A peak dual, not generic 20 A.
IPROPI and VREF dual-mode labels appear swapped versus the datasheet.
Pins 38/39 should include dual-mode aliases IN4/IN3.
Pin Type and Pin Description metadata are mostly missing/unspecified.
Suggested next steps:
Rename the swapped IPROPI/VREF symbol terminals.
Populate all Pin Type and Pin Description fields from the datasheet table.
Update the part description to a datasheet-accurate headline rating.
I’ll update every terminal’s Pin Type and Pin Description from the TI pin table, fix the swapped IPROPI/VREF names, add dual-mode aliases for pins 38/39, then re-read the schematic to verify.
Package dimensions: 14 mm x 8.1 mm nominal overall; 14 mm x 6.1 mm nominal body; 0.635 mm pitch; max height 1.2 mm.
VM operating range: 4.5 V to 60 V; VM absolute maximum: -0.3 V to 70 V.
Output current: dual H-bridge 8 A peak / 5 A RMS recommended; single H-bridge 16 A peak / 10 A RMS recommended.
RDS(on), total HS + LS: 100 mΩ typical in dual H-bridge mode; 50 mΩ typical in single H-bridge mode at 25 °C.
Logic: VCC 3.05 V to 5.5 V; logic inputs compatible with 1.8 V, 3.3 V, and 5 V logic.
Features: PH/EN or PWM control, adjustable current regulation, IPROPI current-sense output, nFAULT open-drain output, UVLO/OCP/thermal protections.
Pin cross-check
The schematic symbol contains all 45 terminals and the footprint contains 45 pads. Most pin numbers and names match the datasheet for the physical DDW package. The exposed thermal pad is represented as EP with Pin Number 45, which is appropriate for the land/pad count even though the TI pin table labels it as PAD rather than a numbered signal pin.
Mismatches / issues
Datasheet URL was not the official TI URL in project metadata
Existing project metadata pointed to an uploaded storage PDF.
Current description says “70-V 20A single or dual H-br”.
Datasheet headline is 60-V operating VM. 70 V is the absolute maximum VM rating, not operating rating.
Datasheet output current is 16 A peak / 10 A RMS recommended in single H-bridge mode, and 8 A peak / 5 A RMS recommended in dual H-bridge mode. A generic “20 A” description is not supported by the reviewed datasheet excerpts.
Dual H-bridge functional labels for IPROPI are swapped
Datasheet: Pin 30 = IPROPI2; Pin 31 = IPROPI1.
Symbol: Pin 30 is named IPROPI_1; Pin 31 is named IPROPI_2.
Recommended fix: rename Pin 30 to IPROPI2 and Pin 31 to IPROPI1, or use datasheet dual-mode aliases in pin descriptions.
Dual H-bridge functional labels for VREF are swapped
Datasheet: Pin 33 = VREF2; Pin 34 = VREF1.
Symbol: Pin 33 is named VREF_1; Pin 34 is named VREF_2.
Recommended fix: rename Pin 33 to VREF2 and Pin 34 to VREF1.
Pins 38 and 39 omit dual-mode function names
Datasheet: Pin 38 = RSVD in single H-bridge mode / IN4 in dual H-bridge mode; Pin 39 = RSVD in single H-bridge mode / IN3 in dual H-bridge mode.
Symbol: RSVD_3 and RSVD_4 only.
Recommended fix: label as RSVD/IN4 and RSVD/IN3, or add pin descriptions with dual-mode aliases.
Pin metadata is incomplete
All terminal Pin Type fields are currently “Unspecified”.
No terminal-level Pin Description fields are present.
Recommended fix: populate Pin Type and Pin Description from the datasheet pin table, especially for power pins, logic inputs, open-drain nFAULT, analog outputs IPROPIx, reserved pins, and charge-pump pins.
Footprint check
Footprint has 44 perimeter pads plus exposed thermal pad = 45 pads; this matches the datasheet terminal count.
Pad naming/designators correspond to symbol terminals.
Datasheet land pattern expects HTSSOP-44 PowerPAD, 0.635 mm pitch, pin land pads 1.45 mm x 0.4 mm, thermal pad land about 3.8 mm x 8.0 mm, with thermal via array guidance.
This review verified pad count and terminal mapping from available layout data. It did not independently measure pad dimensions because the current layout tree response did not expose pad geometry values.
Recommended cleanup
Update the part description to a datasheet-accurate rating such as: “Automotive 60-V single/dual H-bridge motor driver, 16-A peak single or 8-A peak dual, HTSSOP-44 PowerPAD.”
Rename swapped VREF/IPROPI pins or add explicit pin descriptions with single-mode and dual-mode aliases.
Add Pin Type and Pin Description properties for all terminals from the datasheet pin table.
If footprint geometry data is available in a deeper footprint editor view, verify pad dimensions against TI DDW0044E land pattern values.
Metadata reviewed
Datasheet key specs
Pin cross-check
Mismatches / issues
Footprint check
Recommended cleanup
Reviews
Documents
DRV8262QDDWRQ1 Part Review
Assets
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DRV8262QDDWRQ1
SOP64P810X120-45N.kicad_modFootprint
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DRV8262QDDWRQ1.stp3D Model
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DRV8262QDDWRQ1 Symbol.svgDefault
DRV8262QDDWRQ1
Bipolar Motor Driver NMOS On/Off, PWM 44-HTSSOP
The DRV8262QDDWRQ1 is an automotive-qualified, high-power H-bridge motor driver from Texas Instruments designed for 24 V and 48 V automotive systems. It integrates two H-bridges capable of driving one or two brushed DC motors, a bipolar stepper motor, or thermoelectric coolers (TECs). The device features integrated high-side current sensing, programmable current regulation, and comprehensive protection functions, eliminating the need for external current-sense resistors while reducing PCB area and system cost. It supports wide supply voltages from 4.5 V to 60 V, making it suitable for demanding automotive body electronics and industrial motor control applications.
Key Features
Automotive AEC-Q100 Grade 1 qualified (-40°C to +125°C)
Wide 4.5 V to 60 V operating supply voltage
Dual H-bridge or single high-current H-bridge operation
Drives:
One or two brushed DC motors
One bipolar stepper motor
One or two thermoelectric coolers (TECs)
Up to 8 A peak (dual H-bridge mode)
Up to 16 A peak (single H-bridge mode)
Low MOSFET on-resistance:
100 mΩ (dual H-bridge)
50 mΩ (single H-bridge)
Integrated high-side current sensing with ±4% accuracy
Programmable current regulation and current limiting
Supports 1.8 V, 3.3 V, and 5 V logic interfaces
Configurable PWM control modes (PH/EN or IN/IN)
Ultra-low 3 µA sleep current
Integrated protection features:
Undervoltage Lockout (UVLO)
Charge Pump Undervoltage (CPUV)
Overcurrent Protection (OCP)
Thermal Shutdown (OTSD)
Fault output (nFAULT)
Functional safety-capable with supporting documentation for automotive system design.