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Documents

    Documents are markdown text files which describe project goals, capture details, or even simulation outputs.

    Assets

    Infineon-PG-TO247-3-0-21-0.kicad_mod

    FP_Infineon-PG-TO247-3-0-21-0Footprint
    Infineon_-_IPW60R045CPFKSA1.step

    Infineon_-_IPW60R045CPFKSA1.step

    3D_Infineon_-_IPW60R045CPFKSA13D Model
    C3M0015065D.png

    C3M0015065D.png

    C3M0015065DThumbnail

    n-channel-mosfet

    n-channel-mosfetDefault

    C3M0060065D

    C3M0060065D thumbnail
    Silicon Carbide (SiC) N-Channel Power MOSFET for high-efficiency power switching applications, featuring a 650 V drain-to-source voltage, 60 mΩ maximum on-resistance (RDS(on)), and 29 A continuous drain current at 25°C. Based on 3rd Generation SiC MOSFET technology, it provides high-speed switching with low capacitances and a fast intrinsic diode with low reverse recovery (Qrr). Supplied in a TO-247-3 through-hole package with a maximum operating junction temperature of +175°C.
    #SiCMOSFET #PowerMOSFET #NChannel #650V #29A #60mOhm #TO247 #HighSpeedSwitching #LowCapacitance #FastRecovery #Wolfspeed

    Properties

    Transistor

    Wolfspeed, Inc.

    C3M0060065D

    assets.wolfspeed.com/uploads/2024/01/Wolfspeed_C3M0060065D_data_sheet.pdf

    Q

    creativecommons.org/licenses/by/4.0/

    Pricing & Availability

    DPN

    Stock

    Qty 1

    4

    0–215

    $0.0502–$6.28

    1

    11

    $13.8844

    1

    300

    $9.64

    3

    270–420

    $4.788–$8.7143

    Controls