Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair 65V 100mA 175MHz 380mW Surface Mount 6-TSOP

The BCM856DS,115 is a dual matched PNP bipolar junction transistor (BJT) housed in a compact SOT-363 (SC-88) 6-pin surface-mount package. It consists of two independent PNP transistors with closely matched electrical characteristics, making it suitable for differential amplifier stages, current mirrors, and signal processing applications where symmetry and thermal tracking are important.

Key Features Dual PNP transistor configuration in a single package Matched transistor pair for improved circuit stability Low collector-emitter saturation voltage High current gain consistency between channels Compact SOT-363 (SC-88) package for space-constrained designs Suitable for low-power and signal-level applications Electrical Characteristics (typical values unless otherwise noted) Collector-Emitter Voltage (VCEO): -45 V Collector-Base Voltage (VCBO): -50 V Emitter-Base Voltage (VEBO): -5 V Continuous Collector Current (IC): -100 mA per transistor Power Dissipation (Ptot): ~250 mW total DC Current Gain (hFE): 100 to 300 Transition Frequency (fT): ~100 MHz Package Information Package Type: SOT-363 (SC-88) Mounting: Surface Mount Pin Count: 6 Configuration: Dual PNP (E1, B1, C2, E2, B2, C1 pin arrangement depending on layout) Applications Differential amplifier input stages Current mirror circuits Signal amplification Analog front-end designs Matched pair transistor applications Additional Notes The two transistors are thermally coupled within the same package, improving matching over temperature variations Ideal for precision analog circuits requiring closely matched transistor characteristics Commonly used in compact and high-density PCB layouts

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