Bipolar (BJT) Transistor NPN 40V 200 mA 300MHz 625 mW Through Hole TO-92-3

The 2N3904TFR is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. It is widely used in signal processing, small-signal amplification, and digital switching circuits. This transistor offers fast switching speed, low saturation voltage, and reliable performance in a compact surface-mount package, making it suitable for consumer electronics, industrial controls, and embedded systems.

Manufacturer Various (commonly ON Semiconductor / onsemi, Diodes Inc., Central Semiconductor)

Part Number 2N3904TFR

Transistor Type NPN Bipolar Junction Transistor (BJT)

Configuration Single

Package / Case SOT-23 (TO-236AB)

Mounting Style Surface Mount (SMD/SMT)

Collector-Emitter Voltage (VCEO) 40 V

Collector-Base Voltage (VCBO) 60 V

Emitter-Base Voltage (VEBO) 6 V

Collector Current (IC) 200 mA (max)

Power Dissipation (PD) ~200 mW to 350 mW (package dependent)

DC Current Gain (hFE) 100 to 300 (typical, varies with operating conditions)

Transition Frequency (fT) ~300 MHz

Collector-Emitter Saturation Voltage (VCE(sat)) ~0.2 V (typical at IC = 10 mA, IB = 1 mA)

Operating Temperature Range -55°C to +150°C

Polarity NPN

Packaging Tape & Reel (TFR suffix)

RoHS Compliance Compliant

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